Güllü, Hasan Hüseyin

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Profile URL
https://hdl.handle.net/20.500.14411/8052
Name Variants
Gullu,H.H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
Job Title
Doktor Öğretim Üyesi
Email Address
hasan.gullu@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Scopus Author ID
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WoS Researcher ID

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NO POVERTY1
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ZERO HUNGER2
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GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
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QUALITY EDUCATION4
QUALITY EDUCATION
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GENDER EQUALITY5
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CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
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AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
5
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DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
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INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
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SUSTAINABLE CITIES AND COMMUNITIES11
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This researcher does not have a Scopus ID.
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Scholarly Output

55

Articles

52

Views / Downloads

7/0

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

881

Scopus Citation Count

899

Patents

0

Projects

0

WoS Citations per Publication

16.02

Scopus Citations per Publication

16.35

Open Access Source

8

Supervised Theses

1

JournalCount
Journal of Materials Science: Materials in Electronics16
Physica B: Condensed Matter7
Bulletin of Materials Science3
Materials Science in Semiconductor Processing3
Optik3
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Subject: current transport

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    Article
    Citation - WoS: 13
    Citation - Scopus: 14
    Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
    (Springer, 2021) Gullu, H. H.; Sirin, D. Seme; Yildiz, D. E.; Seme Sirin, D.
    A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS diode characteristics are investigated by current-voltage (I - V) measurements with a wide range of temperature from 80 K to 300 K. At each temperature, rectifying behavior is achieved and it is improved with an increase in temperature. Barrier height and ideality factor are calculated according to the thermionic emission (TE) model from linearity in the forward bias region of the ln(I) versus V plot. The experimental zero-bias barrier height (Phi(b0)) values are in a good agreement with literature, and at around room temperature the ideality factor (n) reaches unity. At saturation regions in I - V curves, parasitic resistance values are derived by Ohm's law and the series resistance values are also reevaluated by Cheung's relation. Detailed I - V analysis is performed by modifying the TE model with an approximation of low barrier patches embedded in the main barrier height. Two linear relations in the characteristic plots of Phi(b0) and n indicate that double Gaussian distribution is a suitable current conduction model via localized barrier patches at low temperatures. Additionally, reverse bias current flow is analyzed under the dominant effect of Poole-Frenkel emission associated with the interfacial traps. According to the characteristic electric field-dependent current density plot, emission barrier height and relative dielectric constant for n-4H SiC are calculated.