Kayed, Tarek Said

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https://hdl.handle.net/20.500.14411/8435
Name Variants
Kayed, Tarek S.
T.,Kayed
K., Tarek Said
T.S.Kayed
Kayed, Tarek Said
T., Kayed
Tarek Said, Kayed
K.,Tarek Said
Kayed,T.S.
Kayed, TS
Kayed, T. S.
Kayed, TS
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Doçent Doktor
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Main Affiliation
Department of Electrical & Electronics Engineering
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Former Staff
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Scholarly Output

24

Articles

21

Views / Downloads

5/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

205

Scopus Citation Count

214

WoS h-index

8

Scopus h-index

9

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0

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0

WoS Citations per Publication

8.54

Scopus Citations per Publication

8.92

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0

Supervised Theses

0

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Crystal Research and Technology4
Materials Research Bulletin2
Journal of Alloys and Compounds2
Journal of Electronic Materials2
physica status solidi (b)2
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End date: 2021Start date: 2020

Scholarly Output Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Pseudodielectric Dispersion in As2se3< Thin Films
    (Wiley-v C H verlag Gmbh, 2020) Kayed, Tarek S.; Kayed, Tarek Said; Qasrawi, Atef F.; Qasrawı, Atef Fayez Hasan; Kayed, Tarek Said; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    Herein, X-ray diffraction, energy dispersive X-ray spectroscopy, and spectral ellipsometry techniques are used to investigate the structural, pseudo-optical, and pseudodielectric properties of arsenic selenide thin films. The stoichiometric films which are prepared by the thermal evaporation technique are found to prefer the amorphous nature of growth. While the pseudoabsorption coefficient spectra display strong absorption bands at 1.84, 1.81, 1.41, and 1.13 eV, the preferred pseudo-optical transitions happen within a direct forbidden energy bandgap of 1.80 eV. In addition, the real part of the pseudodielectric spectra displays three strong resonance peaks at critical energy values of 2.33, 1.90, and 1.29 eV. Modeling of the imaginary part of the pseudodielectric constant spectra in accordance with the Drude-Lorentz approach results in the existence of six linear oscillators. The response of arsenic selenide to elliptically polarized light signals shows that the films exhibit drift mobility, free electron concentration, and plasmon frequency values in the ranges of 0.21-43.96 cm(2) V(-1)s(-1), 1.90-58.0 x 10(19) cm(-3), and 5.8-32.0 GHz, respectively. The optical conductivity parameters for As2Se3 film nominate it as a promising candidate for the fabrication of tunneling diodes suitable for microwaves filtering up to 32.0 GHz and as thin-film transistors.
  • Thumbnail Image
    Article
    Citation - WoS: 11
    Citation - Scopus: 12
    Characterization of Au/As2< Hybrid Devices Designed for Dual Optoelectronic Applications
    (Elsevier, 2020) Kayed, T. S.; Qasrawi, A. F.
    In this work, hybrid devices composed of n-As2Se3/p-MoO3 encapsulated between two Schottky shoulders (Au/n-As2Se3, Ag/MoO3) are prepared and characterized. While the structural analyses proofed the preferred growth of monoclinic MoO3 onto amorphous layers of As2Se3, the spectroscopic ellipsometry analysis revealed the high frequency dielectric constants, the effective mass and the negative pseudodielectric constant values. Electrically, the hybrid device displayed both tunneling and standard diode characteristics. As passive mode devices, the capacitance-voltage characteristics displayed the accumulation-depletion -inversion modes in the device. Furthermore, the conductivity spectral analysis has shown that the current conduction is dominated by the quantum mechanical tunneling and correlated barriers hoping mechanisms. The amplitude of the reflection coefficient and the return loss spectral analyses indicated that the hybrid devices are band stop filters in addition to it is usability as nonlinear optical interfaces, CMOS device and tunneling diodes.
  • Thumbnail Image
    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Characterization of As2se3< Heterojunction Designed for Multifunctional Operations
    (Iop Publishing Ltd, 2021) Qasrawi, A. F.; Kayed, T. S.
    In this article, As2Se3/MoO3 heterojunction devices are structurally, compositionally, optically and electrically characterized. The heterojunction devices which are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are observed to exhibit amorphous nature of growth. The optical spectrophotometry measurements and analyses on the heterojunction devices revealed a conduction and valence band offsets of values of 2.64 and 4.08 eV, respectively. In addition, the dielectric dispersion and the optical conductivity parametric analyses have shown that the heterojunction could exhibit large drift mobility value up to 73.7 cm(2) V-1 s(-1). From electrical point of view, while the capacitance- voltage curves reveal characteristics of MOSFET devices, the current--voltage curves display tunneling diode characteristics. The features of the As2Se3/MoO3 devices including the band offsets, drift mobility, plasmon frequency, microwave band filtering and MOSFET characteristics make them attractive for use as thin films transistors suitable electrical and optical applications.