Kayed, Tarek Said
Loading...
Profile URL
Name Variants
Kayed, Tarek S.
T.,Kayed
K., Tarek Said
T.S.Kayed
Kayed, Tarek Said
T., Kayed
Tarek Said, Kayed
K.,Tarek Said
Kayed,T.S.
Kayed, TS
Kayed, T. S.
Kayed, TS
T.,Kayed
K., Tarek Said
T.S.Kayed
Kayed, Tarek Said
T., Kayed
Tarek Said, Kayed
K.,Tarek Said
Kayed,T.S.
Kayed, TS
Kayed, T. S.
Kayed, TS
Job Title
Doçent Doktor
Email Address
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID
Sustainable Development Goals
SDG data is not available
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output
24
Articles
21
Views / Downloads
5/0
Supervised MSc Theses
0
Supervised PhD Theses
0
WoS Citation Count
205
Scopus Citation Count
214
WoS h-index
8
Scopus h-index
9
Patents
0
Projects
0
WoS Citations per Publication
8.54
Scopus Citations per Publication
8.92
Open Access Source
0
Supervised Theses
0
Google Analytics Visitor Traffic
| Journal | Count |
|---|---|
| Crystal Research and Technology | 4 |
| Materials Research Bulletin | 2 |
| Journal of Alloys and Compounds | 2 |
| Journal of Electronic Materials | 2 |
| physica status solidi (b) | 2 |
Current Page: 1 / 3
Scopus Quartile Distribution
Competency Cloud
21 results
Scholarly Output Search Results
Now showing 1 - 10 of 21
Article Citation - WoS: 18Citation - Scopus: 19Heat Treatment Effects on the Structural and Electrical Properties of Thermally Deposited Agin5s8< Thin Films(Pergamon-elsevier Science Ltd, 2011) Qasrawi, A. F.; Kayed, T. S.; Ercan, FilizThe heat treatment effects on structural and electrical properties of thermally deposited AgIn5S8 thin films have been investigated. By increasing the annealing temperature of the sample from 450 to 500 K, we observed a change in the crystallization direction from (420) to (311). Further annealing of the AgIn5S8 films at 550, 600 and 650 K resulted in larger grain size in the (311) preferred direction. The room temperature electrical resistivity, Hall coefficient and Hall mobility were significantly influenced by higher annealing temperatures. Three impurity levels at 230, 150, and 78 meV were detected for samples annealed at 350 K. The electrical resistivity decreased by four orders of magnitude when the sample annealing temperature was raised from 350 to 450 K. The temperature dependent electrical resistivity and carrier concentration of the thin film samples were studied in the temperature ranges of 25-300 K and 140-300 K, respectively. A degenerate-nondegenerate semiconductor transition at approximately 180 was observed for samples annealed at 450 and 500 K. Similar type of transition was observed at 240 K for samples annealed at 600 and 650 K. (C) 2011 Elsevier Ltd. All rights reserved.Article Citation - WoS: 5Citation - Scopus: 6Synthesis, X-Ray Data, and Hall Effect Measurements of Li-Doped Tl-Ba Superconductor(Wiley-v C H verlag Gmbh, 2003) Kayed, TSLithium-doped Tl-based superconductor was prepared by adding an amount of 0.3 mol.% to the Tl1.8Ba2Ca2.2Cu3Ox compound. The usual solid-state reaction method has been applied under optimum conditions. The x-ray data of the sample show a tetragonal structure with a high ratio of Tl-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 117 K. Longitudinal (transport) and transverse (Hall) resistivities were measured at different temperatures under different magnetic fields and the data were interpreted. A positive Hall coefficient was observed at normal state and a sign reversal appears at temperatures lower than the critical temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 9Citation - Scopus: 9Electrical Properties of Bi1.5znsb1.5< Pyrochlore Ceramics(Wiley-v C H verlag Gmbh, 2003) Kayed, TS; Mergen, ABi1.5ZnSb1.5O7 pyrochlore samples were prepared by solid state reaction method. They were examined by x-ray diffraction and scanning electron microscopy. Single phase, belongs to the cubic pyrochlore structure, with a lattice parameter of 10.442 Angstrom and grain size that varies from 16 to 20 mum was obtained. The electrical properties were measured at different temperatures in the range 15-330 K under different applied magnetic fields up 1.4 T. In our measurements for Hall coefficient, Hall resistivity, and mobility; we noticed an anomalous behavior at two temperatures (around 250 and 310 K) which was supported by the I-V measurements (double transition of the slope of I-V characteristics (beta) at the same temperatures). This was discussed in terms of polarization phenomenon and mixed ionic-electronic conduction. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 7Citation - Scopus: 9Properties of Boron Doped Ti-Ba Superconductors(Pergamon-elsevier Science Ltd, 2003) Kayed, TSThe effects of boron doping on the formation and properties of the Tl-based superconductors have been studied. Up to 10 wt.% boron has been added to the oxides having the nominal composition, Tl1.8Ba2Ca2.2Cu3Ox, by the usual solid-state reaction method. Boron additions in the range 0.8-1.0% increase the fraction of the Tl-2223 phase and significantly improve the critical temperature of the samples. Higher amounts of boron additions eliminate the Tl-2223 phase, reduce the fraction of Tl-2212 phase and cause separate non-superconducting phases to be formed. The formation of non-superconducting phases does not allow us to obtain pure Tl-2212 phase. (C) 2002 Elsevier Science Ltd. All rights reserved.Article Citation - WoS: 7Citation - Scopus: 7Photoconductivity Kinetics in Agin5s8< Thin Films(Elsevier Science Sa, 2010) Qasrawi, A. F.; Kayed, T. S.; Ercan, IsmailThe temperature (T) and illumination intensity (F) effects on the photoconductivity of as grown and heat-treated AgIn5S8 thin films has been investigated. At fixed illumination intensity, in the temperature region of 40-300K, the photocurrent (I-ph) of the films was observed to decrease with decreasing temperature. The I-ph of the as grown sample behaved abnormally in the temperature region of 170-180K. At fixed temperature and variable illumination intensity, the photocurrent of the as grown sample exhibited linear, sublinear and supralinear recombination mechanisms at 300 K and in the regions of 160-260K and 25-130 K. respectively. This behavior is attributed to the exchange of role between the linear recombination at the surface near room temperature and trapping centers in the film which become dominant as temperature decreases. Annealing the sample at 350 K for 1 h improved the characteristic curves of I-ph. The abnormality disappeared and the I-ph - T dependence is systematic. The data analysis of which revealed two recombination centers located at 66 and 16 meV. In addition, the sublinear recombination mechanism disappeared and the heat-treated films exhibited supralinear recombination in most of the studied temperature range. (C) 2010 Elsevier B.V. All rights reserved.Article Citation - WoS: 5Citation - Scopus: 5Electrical Behavior of Pb1.83mg0.29< Pyrochlore Ceramics(Elsevier Science Bv, 2004) Mergen, A; Kayed, TSPb1.83Mg0.29Nb1.71O6.39 pyrochlore was produced via a simple partial oxalate method. It was examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Single phase, belonging to the cubic pyrochlore structure, with a lattice parameter of a = 10.60125 +/- 0.001 Angstrom and grain size that varies from 5 to 10 mum was obtained. The electrical properties were measured at different temperatures in the range 15-320 K without and with applied magnetic field of 1.4 T. Current-voltage characteristics data were fitted to a power law expression V=I-beta(T) in which the exponential parameter beta takes values around 1 at all temperatures except at 300 K. Resistance starts from 3.3 x 10(10) Omega at 15 K and increases gradually to 4.8 x 10(10) Omega at 240 K. It drops to approximately 1.2 x 10(10) Omega at 300 K, after which it increases again to around 1.6 x 10(10) Omega at 320 K. (C) 2004 Elsevier B.V. All rights reserved.Article Citation - WoS: 42Citation - Scopus: 41Synthesis and Characterization of Mg2b2<(Pergamon-elsevier Science Ltd, 2005) Qasrawi, AF; Kayed, TS; Mergen, A; Gürü, MMagnesium borate of the form Mg2B2O5 has been prepared and its structural and thermal properties were studied using X-ray diffraction and differential thermal analysis. An investigation of the electrical and optical properties of Mg2B2O5 system has been carried out. The electrical resistivity of the sample was measured in the temperature range of 170-400 K. The data analysis revealed an extrinsic nature of the conductivity with two impurity levels located at 0.13 and 0.71 eV in the temperature ranges of 170-230 K and 240-400 K, respectively. The optical transmission and reflection was recorded at 300 K in the incident photon energy range of 3.0-6.0 eV. The absorption coefficient data analysis revealed an indirect optical energy band gap of 4.73 eV. In addition, two impurity levels located at 3.43, and 4.49 eV were observed in the absorption spectra. (c) 2005 Elsevier Ltd. All rights reserved.Conference Object Citation - WoS: 10Production of Anorthite From Kaolinite and Caco3 Via Colemanite(Trans Tech Publications Ltd, 2004) Mergen, A; Kayed, TS; Bilen, M; Qasrawi, AF; Gürü, MBoron oxide has been found to be useful flux for the preparation of dense anorthite ceramics (CaO.Al2O3.2SiO(2)). Inexpensive starting materials of kaolinite, calcium carbonate and silica were used for anorthite ceramic production. Colemanite (2CaO.3B(2)O(3).5H(2)O) was added into the mixtures and the effects of colemanite upon the transformation towards anorthite and on the densification were investigated between 900-1400 degreesC. Single phase anorthite ceramic formed at lower temperatures in boron containing mixtures. Boron containing powder compacts were sintered above 90% theoretical density at 1350 degreesC.Article Citation - WoS: 11Citation - Scopus: 11Microstructural, thermal, and electrical properties of Bi1.7V0.3Sr2Ca2Ca3Ox glass-ceramic superconductor(Wiley-v C H verlag Gmbh, 2004) Kayed, TS; Calinli, N; Aksu, E; Koralay, H; Günen, A; Ercan, I; Cavdar, SA glass-ceramic Bi1.7V0.3Sr2Ca2Cu3Ox superconductor was prepared by the melt-quenching method. The compound was characterized by scanning electron microscopy, x-ray diffraction, differential thermal analysis, current-voltage characteristics, transport resistance measurements, and Hall effect measurements. Two main phases (BSCCO 2212 and 2223) were observed in the x-ray data and the values of the lattice parameters quite agree with the known values for 2212 and 2223 phases. The glass transition temperature was found to be 426 degreesC while the activation energy for crystallization of glass has been found to be E-a = 370.5 kJ / mol. This result indicates that the substitution of vanadium increased the activation energy for the BSCCO system. An offset T-c of 80 K was measured and the onset T-c was 100 K. The Hall resistivity rho(H) was found to be almost field-independent at the normal state. A negative Hall coefficient was observed and no sign reversal of rho(H) or RH could be noticed. The mobility and carrier density at different temperatures in the range 140-300 K under different applied magnetic fields up to 1.4 T were also measured and the results are discussed.Article Citation - WoS: 4Citation - Scopus: 4Band Offsets and Optical Conduction in the Cdse/Gase Interface(Elsevier Science Bv, 2016) Kayed, T. S.; Qasrawi, A. F.; Elsayed, Khaled A.In this work, the design and characterization of CdSe/GaSe heterojunction is considered. The CdSe/GaSe thin film interface was prepared by the physical vapor deposition technique. Systematic structural and optical analysis were performed to explore the crystalline nature, the optical band gaps, the conduction and valence band offsets, the dielectric spectra, and the frequency dependent optical conductivity at terahertz frequencies. The X-ray diffraction analysis revealed a polycrystalline interface that is mostly dominated by the hexagonal CdSe oriented in the (002) direction. It was also found that the CdSe/GaSe interface exhibits conduction and valence band offsets of 1.35 and 1.23/1.14 eV, respectively. The dielectric spectra displayed two dielectric resonance peaks at 530 and 445 THz. Moreover, the computational fittings of the optical conductivity of the interface revealed a free carrier scattering time of 0.41 (fs) for a free carrier density of 7.0 x 10(18) (cm(-3)). The field effect mobility for the CdSe/GaSe interface was found to be 5.22 (cm(2)/Vs). The remarkable features of this device having large band offsets and qualitative optical conduction dominated by a scattering time in the order of femtoseconds in addition to the dielectric property nominate the device to be used in optoelectronic technology. (C) 2016 Elsevier B.V. All rights reserved.
- «
- 1 (current)
- 2
- 3
- »