Altındağ, Tuğba

Profile Picture
Profile URL
https://hdl.handle.net/20.500.14411/8440
Name Variants
Tugba, Altindag
Altındağ, Tuğba
Altindag,T.
T., Altindag
A., Tugba
A.,Tuğba
T.,Altındağ
Altındağ,T.
Tuğba, Altındağ
A.,Tugba
Altindag, Tugba
T.,Altindag
Altindaǧ,T.
Job Title
Araştırma Görevlisi
Email Address
Main Affiliation
Computer Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

SDG data is not available
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

3

Articles

2

Views / Downloads

0/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

17

Scopus Citation Count

25

WoS h-index

2

Scopus h-index

3

Patents

0

Projects

0

WoS Citations per Publication

5.67

Scopus Citations per Publication

8.33

Open Access Source

0

Supervised Theses

0

Google Analytics Visitor Traffic

JournalCount
2009 International Conference on Application of Information and Communication Technologies, AICT 2009 -- 2009 International Conference on Application of Information and Communication Technologies, AICT 2009 -- 14 October 2009 through 16 October 2009 -- Baku -- 794471
Optoelectronics and Advanced Materials, Rapid Communications1
Tehnicki Vjesnik1
Current Page: 1 / 1

Scopus Quartile Distribution

Competency Cloud

GCRIS Competency Cloud

Filters

20091
Reset filters

Settings

Author: Altindaǧ,T.Subject: [No Keyword Available]

Scholarly Output Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Conference Object
    Citation - Scopus: 7
    Semiconductor Laser Modeling With Anfis
    (2009) Çelebi,F.V.; Altindaǧ,T.; Yildirim,R.; Gökrem,L.
    In this study, neuro-fuzzy (NF) models are used which are well-known robust learning systems that combine the advantages of fuzzy sets and neuro-computation theory. Particularly, a single model based on the adaptive network-based fuzzy inference system (ANFIS) is successfully developed from the amplified spontaneous emission (ASE) spectra of a semiconductor laser diode in order to obtain the critical quantities and their dependences on wavelength and currents. These critical quantities are the differential gain, the induced effective index change and the linewidth enhancement factor (α parameter). The comparison of single model results and the experimental measurements validate the presented approach. ©2009 IEEE.