Sürücü, Özge
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Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
Job Title
Doçent Doktor
Email Address
ozge.surucu@atilim.edu.tr
Main Affiliation
Electrical-Electronics Engineering
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Google Scholar ID
WoS Researcher ID
Sustainable Development Goals
14
LIFE BELOW WATER
0
Research Products
2
ZERO HUNGER
0
Research Products
11
SUSTAINABLE CITIES AND COMMUNITIES
0
Research Products
1
NO POVERTY
0
Research Products
12
RESPONSIBLE CONSUMPTION AND PRODUCTION
0
Research Products
7
AFFORDABLE AND CLEAN ENERGY
13
Research Products
5
GENDER EQUALITY
0
Research Products
3
GOOD HEALTH AND WELL-BEING
0
Research Products
9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
Research Products
13
CLIMATE ACTION
0
Research Products
6
CLEAN WATER AND SANITATION
0
Research Products
10
REDUCED INEQUALITIES
0
Research Products
4
QUALITY EDUCATION
0
Research Products
15
LIFE ON LAND
0
Research Products
16
PEACE, JUSTICE AND STRONG INSTITUTIONS
0
Research Products
17
PARTNERSHIPS FOR THE GOALS
0
Research Products
8
DECENT WORK AND ECONOMIC GROWTH
0
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This researcher does not have a Scopus ID.
Documents
55
Citations
822
Scholarly Output
44
Articles
41
Views / Downloads
14/0
Supervised MSc Theses
1
Supervised PhD Theses
0
WoS Citation Count
605
Scopus Citation Count
613
WoS h-index
15
Scopus h-index
15
Patents
0
Projects
0
WoS Citations per Publication
13.75
Scopus Citations per Publication
13.93
Open Access Source
5
Supervised Theses
1
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| Journal | Count |
|---|---|
| Journal of Materials Science: Materials in Electronics | 7 |
| Applied Physics A | 4 |
| Materials Letters | 3 |
| Materials Science in Semiconductor Processing | 3 |
| Physica Scripta | 3 |
Current Page: 1 / 5
Scopus Quartile Distribution
Competency Cloud
35 results
Scholarly Output Search Results
Now showing 1 - 10 of 35
Article Citation - WoS: 10Citation - Scopus: 10Innovative 2d Materials for Efficient Photocatalysis: a Comparative Study for Wsi2n4, Wge2n4, and Their Janus Counterpart Wsigen4 Monolayers(Pergamon-elsevier Science Ltd, 2024) Himmet, F.; Surucu, G.; Lisesivdin, S. B.; Surucu, O.; Altuntas, G.; Bostan, B.; Gencer, A.In pursuit of environmentally friendly and effective photocatalytic materials for water splitting, this research paper presents a thorough evaluation of WSi2N4, WGe2N4, and their Janus counterpart WSiGeN4 monolayers through the application of Density Functional Theory. The study elucidates the optical, electronic, and structural characteristics of these monolayers, thereby demonstrating their potential as highly favorable contenders for applications involving photocatalytic water splitting. By means of comprehensive optimization and analysis, it is shown that these monolayers possess advantageous characteristics, such as favorable band gaps, stable work functions, and stability over a broad pH range. These attributes are of utmost importance in ensuring the effectiveness of hydrogen evolution reaction (HER). The inclusion of Janus WSiGeN4, which possesses an intrinsic mirror asymmetry, significantly improves the photocatalytic efficacy of the material. This is achieved by meeting the demands of optimal redox reaction levels in both the conduction and valence bands. In conjunction with machine learning force fields, ab initio molecular dynamics (AIMD) simulations validate the thermal stability of these monolayers at 300 K. In addition, our analysis of the optical properties reveals substantial absorption in the visible spectrum - vital for photocatalytic applications powered by solar energy. In summary, the research highlights the potential of Janus WSiGeN4, WGe2N4, and WSi2N4 monolayers as multifunctional and effective substances for forthcoming photocatalytic water -splitting systems. This advancement indicates of a significant stride in the direction of sustainable energy solution development.Article Citation - WoS: 9Citation - Scopus: 10Temperature Effects on Optical Characteristics of Cdse Thin Films(Elsevier Sci Ltd, 2021) Gullu, H. H.; Isik, M.; Surucu, O.; Gasanly, N. M.; Parlak, M.CdSe is one of the significant members of II-VI type semiconducting family and it has a wide range of technological applications in which optoelectronic devices take a special position. The present paper reports the structural and optical characteristics of thermally evaporated CdSe thin films. XRD pattern exhibited preferential orientation along (111) plane while atomic composition analyses resulted in the ratio of Cd/Se as closer to 1.0. Temperature-dependent band gap characteristics of CdSe thin films were investigated for the first time by carrying out transmission experiments in the 10-300 K range. The analyses showed that direct band gap energy of the compound decreases from 1.750 (at 10 K) to 1.705 eV (at 300 K). Varshni model was successfully applied to the temperature-band gap energy dependency and various optical constants were determined. Raman spectrum of CdSe thin films was also presented to understand the vibrational characteristics of the compound. The present paper would provide worthwhile data to researchers especially studying on optoelectronic device applications of CdSe thin films.Article Citation - WoS: 39Citation - Scopus: 39Illumination and Voltage Effects on the Forward and Reverse Bias Current-Voltage (i-V) Characteristics in In/In2< Photodiodes(Springer, 2021) Yukselturk, Esra; Surucu, Ozge; Terlemezoglu, Makbule; Parlak, Mehmet; Altindal, SemsettinThe illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20-100 mW/cm(2)) between +/- 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (phi(Bo)) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (I-ph/I-dark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (V-oc) and short-current (I-sc) were found to be 0.36 V and 2.87 mA under 100 mW.cm(-2) illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V-0.5 plots. The energy-dependent surface states (N-ss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm(2).Article Citation - Scopus: 1Determining the Hydrogen Production Potential of Conmo6se8 Chevrel Phases(Institute of Physics, 2025) Gencer, A.; Surucu, O.; Sahin, M.; Ozel, F.; Surucu, G.In this study, the ConMo6Se8 (n = 1, 2, 3, and 4) Chevrel phases are investigated by using Density Functional Theory (DFT) to reveal their potential for photocatalytic hydrogen production. The stability conditions of these phases reveal that CoMo6Se8, Co2Mo6Se8, and Co3Mo6Se8 satisfy the thermodynamic and mechanic stability properties, while Co4Mo6Se8 does not satisfy any of these properties. Furthermore, the formation enthalpy of these phases shows that CoMo6Se8, Co2Mo6Se8, and Co3Mo6Se8 can be synthesized experimentally due to having negative formation enthalpy values. Furthermore, the thermal stabilities of the machine-learning (ML) force fields are investigated by ab-initio molecular dynamics (AIMD) calculations. The electronic properties of these phases are also investigated in detail, and it is found that Co3Mo6Se8 has a suitable band gap for photocatalytic water splitting. Concerning the investigation of the valence band and conduction band levels, it is shown that Co3Mo6Se8 has a conduction band minimum level suitable for producing hydrogen. This study is the first attempt to reveal the hydrogen production performance of the ConMo6Se8 (n = 1, 2, 3, and 4) Chevrel phases as far as the literature is concerned, paving the ground for future investigations in this field. © 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.Article Citation - WoS: 4Citation - Scopus: 4Growth and Optical Characterization of Sn0.6sb0.4< Layer Single Crystals for Optoelectronic Applications(Elsevier Sci Ltd, 2022) Bektas, T.; Terlemezoglu, M.; Surucu, O.; Isik, M.; Parlak, M.SnSe compound is an attractive semiconductor material due to its usage in photovoltaic applications. The sub-stitution of Sb in the SnSe compound presents a remarkable advantage especially in point of tuning optical characteristics. The present paper reports the structural and optical properties of Sn1-xSbxSe (x = 0.4) layered single crystals grown by the vertical Bridgman method. To the best of our knowledge, this work is the first investigation of the Sn0.6Sb0.4Se crystal grown with the vertical Bridgman technique. X-ray diffraction (XRD) pattern of the grown crystal indicated the well crystalline structure of the grown crystals. Lattice strain and interplanar spacing of the crystal structure were determined using the XRD pattern. Scanning electron micro-scope images allowed to the observation of the layer crystal structure. The layer crystalline structure shows 2D material properties and provides 2D applications. Optical properties were revealed by carrying out Raman, ellipsometry and transmission measurements. Raman modes, refractive index, extinction coefficient, and dielectric spectra, band gap energy of the crystal were presented throughout the paper. The obtained results indicated that Sn1-xSbxSe (x = 0.4) layer single crystals may be an alternative potential for photovoltaic and optoelectronic applications.Article Citation - WoS: 20Citation - Scopus: 21A Study on the Dark and Illuminated Operation of Al/Si3< Schottky Photodiodes: Optoelectronic Insights(Springer Heidelberg, 2024) Surucu, Ozge; Yildiz, Dilber Esra; Yildirim, MuratThis work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal-organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current-voltage (I-V), current-time (I-t), capacitance-time (C-t), and conductance time (G-t). The photodiode's rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (R-s) and shunt resistance (R-sh). R-s values are calculated using Cheung's functions, revealing the diode's resistance behavior. The study also examines the photodiode's photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device's light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode's behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.Article Citation - WoS: 2Citation - Scopus: 2Investigation of Tungsten-Based Seleno-Chevrel Compounds With Different Compositions for Efficient Water Splitting(Wiley-v C H verlag Gmbh, 2023) Dag, Tugce Sevinc; Surucu, Gokhan; Gencer, Aysenur; Surucu, Ozge; Ozel, Faruk; Ciftci, YaseminThis study investigates the photocatalytic water splitting performance for NixW6Se8(x=1,2,3,4)${\mathrm{N}}{{\mathrm{i}}_{\mathrm{x}}}{{\mathrm{W}}_6}{\mathrm{S}}{{\mathrm{e}}_8}\;( {x = 1, 2, 3, 4} )$ Chevrel phases with the chemical formula M(x)Mo(6)Ch(8), where M is a metal and Ch is a chalcogen, with x being 0, 1, 2, 3, or 4. Density Functional Theory (DFT) is used to study the NixW6Se8(x=1,2,3,4)${\mathrm{N}}{{\mathrm{i}}_{\mathrm{x}}}{{\mathrm{W}}_6}{\mathrm{S}}{{\mathrm{e}}_8}{\mathrm{\;}}( {x = 1, 2, 3, 4} )$ Chevrel phases, which includes earth-abundant elements for this specific study as an essential consideration for photocatalytic water splitting. The electronic properties are calculated for the NiW6Se8 and Ni2W6Se8 compounds with thermodynamical, mechanical, and dynamic stabilities. For photocatalytic water splitting, the band gaps below 1.23 eV are excluded, and the conduction and valence band levels are determined to examine the reduction and oxidation potentials for efficient photocatalytic water-splitting materials. An examination of the selected band gaps, along with the conduction and valence band levels, reveals that NiW6Se8 is suitable for both reduction and oxidation reactions; whereas, Ni2W6Se8 is a convenient material only for the reduction reaction. This is the first attempt, as far as the literature reveals, to study Chevrel phases in detail and to identify a suitable compound for photocatalytic water splitting.Article Citation - WoS: 8Citation - Scopus: 8Complex Nodal Structure Phonons Formed by Open and Closed Nodal Lines in Coass and Na2cup Solids(Royal Soc Chemistry, 2022) Ding, Guangqian; Sun, Tingting; Surucu, Gokhan; Surucu, Ozge; Gencer, Aysenur; Wang, XiaotianTopological phononic states with nodal lines not only have updated our knowledge of the phases of matter in a fundamental way, but also have become a major frontier research direction in condensed matter physics. From a mathematical perspective, nodal line phonons can be divided into open and closed types. The present attempt is a report on the coexistence of such open and closed nodal line phonons in two realistic solids, CoAsS and Na2CuP, based on first-principles calculations. Furthermore, it is shown that the closed and the open nodal line states in CoAsS and Na2CuP have touching points and can form a complex nodal structure phonon in a momentum space. Due to the topologically non-trivial behavior of the complex nodal structure in both phonons, evident phononic surface states occur in the projected surfaces of both materials. In this way, these states, arising from the projected crossing points, can benefit experimental detection in follow-up studies. It has been stated that the open and closed nodal line states are formed by the crossings of two phonon branches and, hence, these two types of nodal line phonons are coupled with each other. The results obtained here could be considered as a breakthrough in clearly demonstrating the coexistence of the open and closed nodal line states in phonons and, for this reason, may inspire researchers seeking materials with such topological states in other bosons, such as photons.Article Citation - WoS: 28Citation - Scopus: 29The investigation of electronic, anisotropic elastic and lattice dynamical properties of MAB phase nanolaminated ternary borides: M 2 AlB 2 ( M = Mn , Fe and Co ) under spin effects(Elsevier Science Sa, 2020) Surucu, Gokhan; Yildiz, Bugra; Erkisi, Aytac; Wang, Xiaotian; Surucu, Ozge[No Abstract Available]Article Citation - WoS: 9Citation - Scopus: 9Temperature Effects on Optical Characteristics of Thermally Evaporated Cusbse2 Thin Films for Solar Cell Applications(Elsevier, 2022) Surucu, O.; Isik, M.; Terlemezoglu, M.; Bektas, T.; Gasanly, N. M.; Parlak, M.CuSbSe2 thin film was deposited by co-evaporation of binary CuSe and Sb2Se3 sources. The structural and morphological properties of the deposited thin film were investigated with X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray analysis measurements. XRD pattern indicated that deposited thin film has an orthorhombic crystalline structure with the preferential orientation of (013) direction. SEM image presented that the thin film surface is almost uniform. The optical characteristics of the deposited CuSbSe2 thin film were investigated in detail by performing room temperature Raman, temperature-dependent transmittance spectroscopy, and photoluminescence techniques. Raman spectrum exhibited one mode at around 210 cm(-1) associated with A(g) vibrational mode. The derivative spectroscopy technique was used to obtain the band gap energy of the films. Temperature dependence of band gap energy was investigated by considering the Varshni model. The rate of change of band gap energy, absolute zero value of gap energy, and Debye temperature were determined as 1.3 x 10(-4) eV/K, 1.21 eV, and 297 +/- 51 K, respectively. The photoluminescence spectrum indicated the room temperature direct band gap energy as 1.30 eV.
