Sürücü, Özge
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Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
Job Title
Doçent Doktor
Email Address
ozge.surucu@atilim.edu.tr
Main Affiliation
Electrical-Electronics Engineering
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Google Scholar ID
WoS Researcher ID
Sustainable Development Goals
14
LIFE BELOW WATER
0
Research Products
2
ZERO HUNGER
0
Research Products
11
SUSTAINABLE CITIES AND COMMUNITIES
0
Research Products
1
NO POVERTY
0
Research Products
12
RESPONSIBLE CONSUMPTION AND PRODUCTION
0
Research Products
7
AFFORDABLE AND CLEAN ENERGY
13
Research Products
5
GENDER EQUALITY
0
Research Products
3
GOOD HEALTH AND WELL-BEING
0
Research Products
9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
Research Products
13
CLIMATE ACTION
0
Research Products
6
CLEAN WATER AND SANITATION
0
Research Products
10
REDUCED INEQUALITIES
0
Research Products
4
QUALITY EDUCATION
0
Research Products
15
LIFE ON LAND
0
Research Products
16
PEACE, JUSTICE AND STRONG INSTITUTIONS
0
Research Products
17
PARTNERSHIPS FOR THE GOALS
0
Research Products
8
DECENT WORK AND ECONOMIC GROWTH
0
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This researcher does not have a Scopus ID.
Documents
55
Citations
820
Scholarly Output
44
Articles
41
Views / Downloads
14/0
Supervised MSc Theses
1
Supervised PhD Theses
0
WoS Citation Count
604
Scopus Citation Count
612
WoS h-index
15
Scopus h-index
15
Patents
0
Projects
0
WoS Citations per Publication
13.73
Scopus Citations per Publication
13.91
Open Access Source
5
Supervised Theses
1
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| Journal | Count |
|---|---|
| Journal of Materials Science: Materials in Electronics | 7 |
| Applied Physics A | 4 |
| Materials Letters | 3 |
| Materials Science in Semiconductor Processing | 3 |
| Physica Scripta | 3 |
Current Page: 1 / 5
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44 results
Scholarly Output Search Results
Now showing 1 - 10 of 44
Article Citation - WoS: 6Citation - Scopus: 7Construction of Self-Assembled Vertical Nanoflakes on Cztsse Thin Films(Iop Publishing Ltd, 2019) Terlemezoglu, M.; Surucu, O. Bayrakli; Colakoglu, T.; Abak, M. K.; Gullu, H. H.; Ercelebi, C.; Parlak, M.Cu2ZnSn(S, Se)(4) (CZTSSe) is a promising alternative absorber material to achieve high power conversion efficiencies, besides its property of involving low-cost and earth-abundant elements when compared to Cu(In, Ga) Se-2 (CIGS) and cadmium telluride (CdTe), to be used in solar cell technology. In this study, a novel fabrication technique was developed by utilizing RF sputtering deposition of CZTSSe thin films having a surface decorated with self-assembled nanoflakes. The formation of nanoflakes was investigated by detailed spectroscopic method of analysis in the effect of each stacked layer deposition in an optimized sequence and the size of nanoflakes by an accurate control of sputtering process including film thickness. Moreover, the effects of substrate temperature on the formation of nanoflakes on the film surface were discussed at a fixed deposition route. One of the main advantages arising from the film surface with self-assembled nanoflakes is the efficient light trapping which decreases the surface reflectance. As a result of the detailed production and characterization studies, it was observed that there was a possibility of repeatable and controllable fabrication sequence for the preparation of CZTSSe thin films with self-textured surfaces yielding low surface reflectance.Article Citation - WoS: 11Citation - Scopus: 12Structural and Temperature-Tuned Bandgap Characteristics of Thermally Evaporated β-in2< Thin Films(Springer, 2021) Surucu, O.; Isik, M.; Terlemezoglu, M.; Gasanly, N. M.; Parlak, M.In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films. The crystalline structure of the thin films was found as cubic taking into account the observed diffraction peaks in the X-ray diffraction pattern. The atomic compositional ratio of constituent elements was obtained as consistent with chemical formula of In2S3. Three peaks around 275, 309 and 369 cm(-1) were observed in the Raman spectrum. Temperature-tuned bandgap energy characteristics of the In2S3 thin films were revealed from the investigation of transmittance spectra obtained at various temperatures between 10 and 300 K. The analyses of the transmittance spectra indicated that direct bandgap energy of the In2S3 thin films decreases from 2.40 eV (at 10 K) to 2.37 eV (at 300 K) with the increase of measurement temperature. The bandgap energy vs. temperature relation was investigated by means of Varshni optical model. The fitting of the experimental data under the light of theoretical expression revealed the absolute zero bandgap energy, the rate of change of bandgap energy and Debye temperature.Article Citation - WoS: 20Citation - Scopus: 20A Study on the Dark and Illuminated Operation of Al/Si3< Schottky Photodiodes: Optoelectronic Insights(Springer Heidelberg, 2024) Surucu, Ozge; Yildiz, Dilber Esra; Yildirim, MuratThis work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal-organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current-voltage (I-V), current-time (I-t), capacitance-time (C-t), and conductance time (G-t). The photodiode's rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (R-s) and shunt resistance (R-sh). R-s values are calculated using Cheung's functions, revealing the diode's resistance behavior. The study also examines the photodiode's photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device's light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode's behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.Article Citation - WoS: 2Citation - Scopus: 2Investigation of Tungsten-Based Seleno-Chevrel Compounds With Different Compositions for Efficient Water Splitting(Wiley-v C H verlag Gmbh, 2023) Dag, Tugce Sevinc; Surucu, Gokhan; Gencer, Aysenur; Surucu, Ozge; Ozel, Faruk; Ciftci, YaseminThis study investigates the photocatalytic water splitting performance for NixW6Se8(x=1,2,3,4)${\mathrm{N}}{{\mathrm{i}}_{\mathrm{x}}}{{\mathrm{W}}_6}{\mathrm{S}}{{\mathrm{e}}_8}\;( {x = 1, 2, 3, 4} )$ Chevrel phases with the chemical formula M(x)Mo(6)Ch(8), where M is a metal and Ch is a chalcogen, with x being 0, 1, 2, 3, or 4. Density Functional Theory (DFT) is used to study the NixW6Se8(x=1,2,3,4)${\mathrm{N}}{{\mathrm{i}}_{\mathrm{x}}}{{\mathrm{W}}_6}{\mathrm{S}}{{\mathrm{e}}_8}{\mathrm{\;}}( {x = 1, 2, 3, 4} )$ Chevrel phases, which includes earth-abundant elements for this specific study as an essential consideration for photocatalytic water splitting. The electronic properties are calculated for the NiW6Se8 and Ni2W6Se8 compounds with thermodynamical, mechanical, and dynamic stabilities. For photocatalytic water splitting, the band gaps below 1.23 eV are excluded, and the conduction and valence band levels are determined to examine the reduction and oxidation potentials for efficient photocatalytic water-splitting materials. An examination of the selected band gaps, along with the conduction and valence band levels, reveals that NiW6Se8 is suitable for both reduction and oxidation reactions; whereas, Ni2W6Se8 is a convenient material only for the reduction reaction. This is the first attempt, as far as the literature reveals, to study Chevrel phases in detail and to identify a suitable compound for photocatalytic water splitting.Article Citation - WoS: 8Citation - Scopus: 8Complex Nodal Structure Phonons Formed by Open and Closed Nodal Lines in Coass and Na2cup Solids(Royal Soc Chemistry, 2022) Ding, Guangqian; Sun, Tingting; Surucu, Gokhan; Surucu, Ozge; Gencer, Aysenur; Wang, XiaotianTopological phononic states with nodal lines not only have updated our knowledge of the phases of matter in a fundamental way, but also have become a major frontier research direction in condensed matter physics. From a mathematical perspective, nodal line phonons can be divided into open and closed types. The present attempt is a report on the coexistence of such open and closed nodal line phonons in two realistic solids, CoAsS and Na2CuP, based on first-principles calculations. Furthermore, it is shown that the closed and the open nodal line states in CoAsS and Na2CuP have touching points and can form a complex nodal structure phonon in a momentum space. Due to the topologically non-trivial behavior of the complex nodal structure in both phonons, evident phononic surface states occur in the projected surfaces of both materials. In this way, these states, arising from the projected crossing points, can benefit experimental detection in follow-up studies. It has been stated that the open and closed nodal line states are formed by the crossings of two phonon branches and, hence, these two types of nodal line phonons are coupled with each other. The results obtained here could be considered as a breakthrough in clearly demonstrating the coexistence of the open and closed nodal line states in phonons and, for this reason, may inspire researchers seeking materials with such topological states in other bosons, such as photons.Article Citation - WoS: 23Citation - Scopus: 23Exploring Temperature-Dependent Bandgap and Urbach Energies in Cdte Thin Films for Optoelectronic Applications(Elsevier, 2024) Surucu, O.; Surucu, G.; Gasanly, N. M.; Parlak, M.; Isik, M.This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.Conference Object Citation - WoS: 10Citation - Scopus: 10Investigation of Carrier Transport Mechanisms in the Cu-Zn Based Hetero-Structure Grown by Sputtering Technique(Canadian Science Publishing, 2018) Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M.In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm(-2)K(-2) by means of modified Richardson plot.Article Citation - WoS: 9Citation - Scopus: 9Temperature Effects on Optical Characteristics of Thermally Evaporated Cusbse2 Thin Films for Solar Cell Applications(Elsevier, 2022) Surucu, O.; Isik, M.; Terlemezoglu, M.; Bektas, T.; Gasanly, N. M.; Parlak, M.CuSbSe2 thin film was deposited by co-evaporation of binary CuSe and Sb2Se3 sources. The structural and morphological properties of the deposited thin film were investigated with X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray analysis measurements. XRD pattern indicated that deposited thin film has an orthorhombic crystalline structure with the preferential orientation of (013) direction. SEM image presented that the thin film surface is almost uniform. The optical characteristics of the deposited CuSbSe2 thin film were investigated in detail by performing room temperature Raman, temperature-dependent transmittance spectroscopy, and photoluminescence techniques. Raman spectrum exhibited one mode at around 210 cm(-1) associated with A(g) vibrational mode. The derivative spectroscopy technique was used to obtain the band gap energy of the films. Temperature dependence of band gap energy was investigated by considering the Varshni model. The rate of change of band gap energy, absolute zero value of gap energy, and Debye temperature were determined as 1.3 x 10(-4) eV/K, 1.21 eV, and 297 +/- 51 K, respectively. The photoluminescence spectrum indicated the room temperature direct band gap energy as 1.30 eV.Article Citation - WoS: 2Citation - Scopus: 2Performance Enhancement of Silicon Photodiodes Through the Integration of Green Synthesized Reduced Graphene Oxide Variants(Iop Publishing Ltd, 2024) Yildiz, D. E.; Sürücü, Özge; Surucu, O.; Balaban, H. Mert; Bilici, I; Yildirim, M.; Sürücü, Özge; Electrical-Electronics Engineering; Electrical-Electronics EngineeringThis study examines the potential of enhancing the optoelectronic properties of silicon photodiodes by producing and analyzing heterostructures that incorporate reduced graphene oxide (rGO) synthesized with silicon using different reduction methods. Graphene oxide (GO) was manufactured utilizing an enhanced Hummers' method. Subsequently, reduced graphene oxides (rGOs) were made by chemical and thermal reduction processes, which are considered ecologically friendly. The use of ascorbic acid to produce ascorbic acid-reduced graphene oxide (ArGO) and thermal processing to produce thermally reduced graphene oxide (TrGO) have significantly contributed to the development of high-performance photodiode technology. The electrical properties were carefully assessed under different levels of light, revealing the substantial impact of integrating reduced graphene oxides (rGOs) on the performance of the diodes. Comparing ArGO/Si, TrGO/Si, and GO/Si heterostructures shows that customized rGO has the potential to greatly influence the responsivity and efficiency of Si-based optoelectronic devices, making a significant contribution to photodiode technology.Article Citation - WoS: 1Deposition and Characterization of ZnSnSe2 Thin-Films Deposited by Using Sintered Stoichiometric Powder(Gazi Univ, 2019) Bayrakli Surucu, Ozge; Gullu, Hasan HuseyinIn this work, ZnSnSe2 (ZTSe) thin films were deposited using crystalline powder grown by vertical Bridgman-Stockbarger technique. The deposition process was carried out by means of e-beam evaporation on the well-cleaned soda lime glass substrates and keeping them at the substrate temperature of 200 degrees C. The structural, optical and electrical properties of ternary ZTSe thin films were investigated depending on the annealing temperature at 250 and 300 degrees C. X-ray diffraction analysis showed that as-grown films were in amorphous structure, however annealing at 250 degrees C triggered the crystallization on the preferred ternary structure and annealing at 300 degrees C resulted in the changes from amorphous to the polycrystalline structure. Using the compositional analysis, the detail information about the stoichiometry and the segregation mechanisms of the constituent elements in the structure were determined for both as-grown and annealed samples. In addition, they were morphologically characterized using scanning electron microscopy technique. The electrical properties were analyzed using temperature dependent dark- and photo-conductivity measurements. From the variation of electrical conductivity as a function of the ambient temperature, the current transport mechanisms and corresponding activation energies at specific temperature intervals for each sample were determined. The optical properties for the ZTSe thin films were studied depending on the structural changes with annealing.
