Sürücü, Özge

Sürücü, Özge

Name Variants

Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.

Job Title

Doçent Doktor

Email Address

ozge.surucu@atilim.edu.tr

Main Affiliation

Electrical-Electronics Engineering

ORCID ID

0000-0002-8478-1267

Full item page

Scholarly Output

38

Articles

36

Citation Count

368

Supervised Theses

0 Scholarly Output Search Results

Now showing 1 - 10 of 38

Citation - WoS: 5
Citation - Scopus: 4
Pressure and Spin Effect on the Stability, Electronic and Mechanic Properties of Three Equiatomic Quaternary Heusler (fevhfz, Z = Al, Si, and Ge) Compounds
(Elsevier, 2021) Surucu, G.; Gencer, A.; Surucu, O.; Usanmaz, D.; Candan, A.; Electrical-Electronics Engineering
In this paper, three equiatomic quaternary Heusler compounds -FeVHfZ (Z = Al, Si, and Ge) - are investigated for their structural, magnetic, electronic, mechanic, and lattice dynamic properties under pressure effect. These compounds are optimized for under three structural types and three magnetic phases: beta is the most stable structure with ferromagnetic phase. The electronic properties reveal that FeVHfAl is a half-metal, and that FeVHfSi and FeVHfGe are spin gapless semiconductors. In addition to electronic band structure, possible hybridization and partial density of states are presented. Furthermore, the mechanical properties are studied, and the three-dimensional direction-dependent mechanical properties are visualized under varying pressure effects. Our results reveal the half-metal and spin gapless semiconductor nature of the ferromagnetic FeVHfZ com-pounds, making them promising materials for spintronics applications.
Citation - WoS: 43
Citation - Scopus: 43
Lattice Dynamical and Thermo-Elastic Properties of M₂alb (m = V, Nb, Ta) Max Phase Borides
(Elsevier Science Sa, 2020) Surucu, Gokhan; Gencer, Aysenur; Wang, Xiaotian; Surucu, Ozge; Electrical-Electronics Engineering
The structural, electronic, dynamic, and thermo-elastic properties of M2AlB (X = V, Nb, Ta) MAX phase borides were investigated using first principle calculations as implemented in the Vienna Ab-initio Simulation Package (VASP) with the generalized gradient approximation (GGA). The obtained structural properties and formation energies showed the thermodynamic stability and synthesizability of M2AlB. The electronic band structures were determined and they revealed that these compounds had a metallic character. The dynamic stability of M2AlB compounds were investigated with phonon dispersion curves and these compounds were found to be dynamically stable. The elastic constants were also calculated to determine the mechanical stability and to obtain the polycrystalline properties such as bulk modulus, shear modulus, etc. The thermo-elastic properties (thermal expansion coefficient, heat capacity, entropy, and free energy) were studied in a temperature range in between 0 and 1000 K and a pressure range in between 0 and 30 GPa. In addition, the direction dependent sound wave velocities were studied in three dimensions. Moreover, the minimum thermal conductivities and the diffusion thermal conductivities of these compounds were determined. This work is the processor study for the investigation of the main physical properties of M2AlB (M = V, Nb, Ta) ceramic compounds to date. (C) 2019 Elsevier B.V. All rights reserved.
Citation - WoS: 19
Citation - Scopus: 23
Temperature Dependence of Band Gaps in Sputtered Snse Thin Films
(Pergamon-elsevier Science Ltd, 2019) Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band gaps with energies around 1.34 and 1.56 eV. The origin of these band gaps was investigated and it was assigned to the splitting of valence band into two bands due to spin-orbit interaction. Alteration of these band gap values due to varying sample temperature of the thin films were also explored in the study. It was seen that the gap energy values increased almost linearly with decreasing temperature as expected according to theoretical knowledge.
Citation - WoS: 5
Citation - Scopus: 5
A Study on the Dark and Illuminated Operation of Al/Si_{3< Schottky Photodiodes: Optoelectronic Insights}
(Springer Heidelberg, 2024) Surucu, Ozge; Yildiz, Dilber Esra; Yildirim, Murat; Electrical-Electronics Engineering
This work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal-organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current-voltage (I-V), current-time (I-t), capacitance-time (C-t), and conductance time (G-t). The photodiode's rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (R-s) and shunt resistance (R-sh). R-s values are calculated using Cheung's functions, revealing the diode's resistance behavior. The study also examines the photodiode's photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device's light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode's behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.
Citation - WoS: 20
Citation - Scopus: 20
Anisotropic mechanical properties of Tl₄Ag₁₈Te₁₁ compound with low thermal conductivity
(Academic Press inc Elsevier Science, 2020) Gencer, Aysenur; Surucu, Ozge; Surucu, Gokhan; Deligoz, Engin; Electrical-Electronics Engineering
The anisotropic mechanical properties of Tl4Ag18Te11 compound was investigated elaborately for the first time by using Density Functional Theory calculations with the Vienna Ab-initio Simulation Package in this work. Tl4Ag18Te11 compound was optimized in the I4mm space group and the formation energy was determined as a negative value that is the indication of the experimental synthesizability of this compound. The optimized crystal structure was employed for the calculations of the elastic constants and the obtained values revealed the mechanical stability of Tl4Ag18Te11 compound. The polycrystalline properties were determined such as shear modulus, Poisson's ratio, etc. In addition, the anisotropic elastic properties were presented. The direction dependent sound waves velocities, polarization of the sound waves, enhancement factor and the power flow angle were determined. The thermal conductivity studies were performed and the minimum thermal conductivity (0.259 W m(-1)K(-1)) and the diffusion thermal conductivity (0.202 W m(-1)K(-1)) were calculated. This study illustrates the capability of this compound for the thermoelectric materials.
Citation - WoS: 6
Citation - Scopus: 7
Complex Nodal Structure Phonons Formed by Open and Closed Nodal Lines in Coass and Na₂cup Solids
(Royal Soc Chemistry, 2022) Ding, Guangqian; Sun, Tingting; Surucu, Gokhan; Surucu, Ozge; Gencer, Aysenur; Wang, Xiaotian; Electrical-Electronics Engineering
Topological phononic states with nodal lines not only have updated our knowledge of the phases of matter in a fundamental way, but also have become a major frontier research direction in condensed matter physics. From a mathematical perspective, nodal line phonons can be divided into open and closed types. The present attempt is a report on the coexistence of such open and closed nodal line phonons in two realistic solids, CoAsS and Na2CuP, based on first-principles calculations. Furthermore, it is shown that the closed and the open nodal line states in CoAsS and Na2CuP have touching points and can form a complex nodal structure phonon in a momentum space. Due to the topologically non-trivial behavior of the complex nodal structure in both phonons, evident phononic surface states occur in the projected surfaces of both materials. In this way, these states, arising from the projected crossing points, can benefit experimental detection in follow-up studies. It has been stated that the open and closed nodal line states are formed by the crossings of two phonon branches and, hence, these two types of nodal line phonons are coupled with each other. The results obtained here could be considered as a breakthrough in clearly demonstrating the coexistence of the open and closed nodal line states in phonons and, for this reason, may inspire researchers seeking materials with such topological states in other bosons, such as photons.
Citation - WoS: 25
Citation - Scopus: 26
The investigation of electronic, anisotropic elastic and lattice dynamical properties of MAB phase nanolaminated ternary borides: M 2 AlB 2 ( M = Mn , Fe and Co ) under spin effects
(Elsevier Science Sa, 2020) Surucu, Gokhan; Yildiz, Bugra; Erkisi, Aytac; Wang, Xiaotian; Surucu, Ozge; Electrical-Electronics Engineering
[No Abstract Available]
Citation - WoS: 12
Citation - Scopus: 12
Exploring Temperature-Dependent Bandgap and Urbach Energies in Cdte Thin Films for Optoelectronic Applications
(Elsevier, 2024) Surucu, O.; Surucu, G.; Gasanly, N. M.; Parlak, M.; Isik, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.
Citation - WoS: 10
Citation - Scopus: 10
Investigation of Carrier Transport Mechanisms in the Cu-Zn Based Hetero-Structure Grown by Sputtering Technique
(Canadian Science Publishing, 2018) Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm(-2)K(-2) by means of modified Richardson plot.
Citation - WoS: 32
Citation - Scopus: 32
Illumination and Voltage Effects on the Forward and Reverse Bias Current-Voltage (i-V) Characteristics in In/In_{2< Photodiodes}
(Springer, 2021) Yukselturk, Esra; Surucu, Ozge; Terlemezoglu, Makbule; Parlak, Mehmet; Altindal, Semsettin; Electrical-Electronics Engineering
The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20-100 mW/cm(2)) between +/- 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (phi(Bo)) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (I-ph/I-dark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (V-oc) and short-current (I-sc) were found to be 0.36 V and 2.87 mA under 100 mW.cm(-2) illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V-0.5 plots. The energy-dependent surface states (N-ss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm(2).

Sürücü, Özge

Name Variants

Job Title

Email Address

Main Affiliation

Status

Website

ORCID ID

Scopus Author ID

Turkish CoHE Profile ID

Google Scholar ID

WoS Researcher ID

Scholarly Output

38

Articles

36

Citation Count

368

Supervised Theses

0

Filters

Settings

Sort By

Results per page

Scholarly Output Search Results