Sürücü, Özge
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Name Variants
Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
Job Title
Doçent Doktor
Email Address
ozge.surucu@atilim.edu.tr
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID
Scholarly Output
38
Articles
36
Citation Count
368
Supervised Theses
0
38 results
Scholarly Output Search Results
Now showing 1 - 10 of 38
Article Citation Count: 9CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications(Springer, 2019) Sürücü, Özge; Surucu, O. Bayrakli; Güllü, Hasan Hüseyin; Gullu, H. H.; Ciftpinar, E. H.; Ercelebi, C.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics EngineeringThe focus of this study is the characterization of Cu2ZnSn(S,Se)(4) (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au was entirely fabricated by totally vacuum-based process. CZTSSe absorber layers were grown by RF magnetron sputtering technique using stacked layer procedure. SnS, CuSe and ZnSe solid targets were used as precursors and no additional step like the selenization process was applied. The structural and morphological properties of deposited CZTSSe layers were analyzed using X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. The optical and electrical properties of the CZTSSe thin films were investigated by UV-Vis spectroscopy, Hall-Effect and photoconductivity measurements. In addition, the device performance of the fabricated superstrate solar cell was examined.Article Citation Count: 0Establishing the NiMo6Se8 Chevrel Phase as a Promising Material Using DFT(Wiley-v C H verlag Gmbh, 2024) Sürücü, Özge; Surucu, Ozge; Usanmaz, Demet; Oezel, Faruk; Gencer, Aysenur; Electrical-Electronics EngineeringIn this study, the NiMo6Se8 Chevrel phase is analyzed using Density Functional Theory (DFT) and the Vienna Ab-initio Simulation Package (VASP). The analysis focuses on the phase's structural, electrical, and mechanical characteristics to fill gaps in the current literature. The presence of a rhombohedral crystal structure confirms its thermodynamic stability, as indicated by a negative formation enthalpy, which suggests that it can be synthesized under favorable conditions. The electronic properties of the phase are analyzed, indicating that it exhibits semiconductor characteristics with a bandgap of 1.07 eV. This makes it appropriate for various technological applications. The estimated elastic constants provide an indication of mechanical strength and flexibility, with a noticeable presence of anisotropic elasticity. The confirmation of dynamical stability is achieved by analyzing the phonon dispersion curve, which reveals the absence of any negative frequencies. Furthermore, the material has a low thermal conductivity, increasing its suitability for thermoelectric applications. The analysis emphasizes the versatile capabilities of the NiMo6Se8 Chevrel phase, especially in thermoelectric and energy storage applications, showcasing its promising potential for future technological implementation.Article Citation Count: 8Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films(Elsevier Sci Ltd, 2020) Sürücü, Özge; Isik, M.; Işık, Mehmet; Terlemezoglu, M.; Güllü, Hasan Hüseyin; Gasanly, N. M.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics EngineeringStructural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and -2.1 x 10(-4) eV K-1, respectively.Article Citation Count: 0Performance analysis of CuSbSe2 thin-film solar cells with Cd-free window layers(Elsevier, 2024) Sürücü, Özge; Bal, Ersin; Gencer, Aysenur; Parlak, Mehmet; Surucu, Ozge; Electrical-Electronics EngineeringThis study investigates novel thin-film solar cells featuring CuSbSe2 (CASe) with ZnSnO and ZnMgO windows in the layer superstrate structure. For glass/ITO/ZnMgO/CASe/Cu + Au, the J-V measurements reveal a shortcircuit current density (Jsc) of 19.4 mA/cm2, an open-circuit voltage (Voc) of 0.28 Volts, a fill factor (FF) of 39.14 %, and a power conversion efficiency (eta) of 2.13 %. Similarly, glass/ITO/ZnSnO/CASe/Cu + Au exhibits Jsc around 19.6 mA/cm2, Voc around 0.31 Volts, FF around 40 %, and eta of 2.43 %. This paper is a pioneering contribution, introducing novel thin-film solar cells with a distinctive superstrate structure utilizing CASe in conjunction with ZnSnO and ZnMgO windows. The comprehensive study presents the first-ever characterization and performance evaluation of these innovative configurations, shedding light on their unique potential in advancing sustainable solar energy technology.Article Citation Count: 21Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes(Elsevier, 2019) Sürücü, Özge; Gullu, H. H.; Güllü, Hasan Hüseyin; Yildiz, D. E.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics EngineeringIn this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm(-2)K(-2) with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results.Article Citation Count: 20Enhanced hydrogen storage of a functional material: Hf2CF2 MXene with Li decoration(Elsevier, 2021) Sürücü, Özge; Aydin, Sezgin; Surucu, Ozge; Wang, Xiaotian; Deligoz, Engin; Surucu, Gokhan; Electrical-Electronics EngineeringIn this paper, the hydrogen storage properties of the Li-decorated stable Hf2CF2 MXene layer, obtained by the exfoliation of Al from Hf2AlC and F-termination, are considered by using first-principles calculations based on Density Functional Theory. First, the stability characteristics of the host structure (Hf2CF2 layer) are examined by investigating bulk Hf2AlC. To enhance the adsorbed number of H-2 molecules, the well-defined initial H-2 coordinates are constructed by CLICH (Cap-Like Initial Conditions for Hydrogens) and Monte Carlo-based algorithms. After the geometry optimizations of the designed H-2 systems on the Li/Hf2CF2 layer, the adsorption energies of nH(2)/Li/Hf2CF2 n = 1-10, 15, 20 and 25 systems are calculated, and the suitable values (0.2-0.6 eV/H-2) are obtained up to 15H(2). For n = 20 and 25 systems, which have adsorption energies of 0.15 eV/H-2 and 0.16 eV/H-2, respectively. The structural properties and adsorption geometries of these molecules are analyzed. Additionally, the partial density of the states, electron density difference maps, and Mulliken atomic charges are presented to identify the actual binding mechanism of the systems. The results reveal that the Li-decorated Hf2CF2 MXene layer can be preferred for the hydrogen storage applications due to its stable nature and the convenient adsorption characteristics.Article Citation Count: 37Lattice dynamical and thermo-elastic properties of M2AlB (M = V, Nb, Ta) MAX phase borides(Elsevier Science Sa, 2020) Sürücü, Özge; Gencer, Aysenur; Wang, Xiaotian; Surucu, Ozge; Electrical-Electronics EngineeringThe structural, electronic, dynamic, and thermo-elastic properties of M2AlB (X = V, Nb, Ta) MAX phase borides were investigated using first principle calculations as implemented in the Vienna Ab-initio Simulation Package (VASP) with the generalized gradient approximation (GGA). The obtained structural properties and formation energies showed the thermodynamic stability and synthesizability of M2AlB. The electronic band structures were determined and they revealed that these compounds had a metallic character. The dynamic stability of M2AlB compounds were investigated with phonon dispersion curves and these compounds were found to be dynamically stable. The elastic constants were also calculated to determine the mechanical stability and to obtain the polycrystalline properties such as bulk modulus, shear modulus, etc. The thermo-elastic properties (thermal expansion coefficient, heat capacity, entropy, and free energy) were studied in a temperature range in between 0 and 1000 K and a pressure range in between 0 and 30 GPa. In addition, the direction dependent sound wave velocities were studied in three dimensions. Moreover, the minimum thermal conductivities and the diffusion thermal conductivities of these compounds were determined. This work is the processor study for the investigation of the main physical properties of M2AlB (M = V, Nb, Ta) ceramic compounds to date. (C) 2019 Elsevier B.V. All rights reserved.Article Citation Count: 17Temperature dependence of band gaps in sputtered SnSe thin films(Pergamon-elsevier Science Ltd, 2019) Sürücü, Özge; Isik, M.; Işık, Mehmet; Terlemezoglu, M.; Güllü, Hasan Hüseyin; Parlak, M.; Gasanly, N. M.; Electrical-Electronics Engineering; Department of Electrical & Electronics EngineeringTemperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band gaps with energies around 1.34 and 1.56 eV. The origin of these band gaps was investigated and it was assigned to the splitting of valence band into two bands due to spin-orbit interaction. Alteration of these band gap values due to varying sample temperature of the thin films were also explored in the study. It was seen that the gap energy values increased almost linearly with decreasing temperature as expected according to theoretical knowledge.Article Citation Count: 14Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes(indian Acad Sciences, 2019) Sürücü, Özge; Yildiz, D. E.; Güllü, Hasan Hüseyin; Terlemezoglu, M.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics EngineeringCu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current-voltage (I-V) measurements in the temperature range of 220-360 K. The forward bias I-V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (Phi(B0)) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung's theoretical approach, a linear correlation between Phi(B0) and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A*). As a result, A* was calculated approximately as 120.6 A cm(-2) K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R-s) by estimating from Cheng's function and density of surface states (N-ss) by taking the bias dependence of effective barrier height, were discussed.Article Citation Count: 14Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure(Springer, 2019) Sürücü, Özge; Surucu, O. Bayrakli; Güllü, Hasan Hüseyin; Yildiz, D. E.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics EngineeringIn/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high-low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage.
