Qasrawı, Atef Fayez Hasan

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Citation - WoS: 8
Citation - Scopus: 10
Thickness Effects on the Dielectric Dispersion and Optical Conductivity Parameters of Cuo Thin Films
(Wiley, 2020) Qasrawi, Atef F.; Qasrawı, Atef Fayez Hasan; Hamamdah, Alaa A.; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
In this article, the effect of film thickness on the structural, optical, dielectric, and optical conductivity parameters of CuO thin films are reported. CuO thin films which are prepared by the physical vapor deposition technique under vacuum pressure of 10(-5) mbar with various thicknesses in the range of 50 to 1000 nm are observed to exhibit amorphous nature of growth. The values of the energy bands gaps, the spectral response of the dielectric constant and of the optical conductivity parameters are highly sensitive to the film thickness. Particularly, while the 50 nm thick CuO films exhibits quantum confinement which forces the material to have wide band gap (2.70 eV), the thicker films display an energy band gap in the infrared range of spectrum. It was also observed that the thicker the films, the more pronounced the nonlinear dielectric response. In addition, analysis of the optical conductivity parameters using Drude-Lorentz approach for optical conduction has shown that the 50 nm thick films can display drift mobility value of 4.65 cm(2)/Vs accompanied with plasmon frequency of 1.20 GHz and free carrier density of 7.5x10(17) cm(3). The Drude-Lorentz analysis has also shown that the free carrier density and the plasmon frequency of CuO decreases with increasing film thickness. This decrement is accompanied with enhancement in the drift mobility values which reaches 12.56 cm(2)/V s as the film thickness exceeds 250 nm. Such features of the thin layer of CuO make them suitable for the production of nano/microthin film transistors.
Citation - WoS: 11
Citation - Scopus: 11
Band Offsets, Optical Conduction, and Microwave Band Filtering Characteristics of Γ-in₂se_{3< Heterojunctions}
(Wiley-v C H verlag Gmbh, 2020) Qasrawi, Atef F.; Kmail, Reham R.
Herein, the design and experimental characterization of gamma-In2Se3/CuO interfaces are considered. Thin films of gamma-In(2)Se(3)are coated with thin layers of CuO at room temperature. The heterojunction device is structurally, morphologically, and optically characterized. It is observed that the coating of CuO onto gamma-In(2)Se(3)engenders the formation of CuSe(2)at the ultrathin interface. The gamma-In2Se3/CuO heterojunctions exhibit maximum possible conduction and valence band offsets of values 0.47 and 0.96 eV, respectively. The dielectric spectra display two dielectric resonance peaks at 2.96 and 1.78 eV. In addition, analyses of the optical conductivity spectra reveal accurate drift mobility and plasmon frequency values of 31.31 cm(2) Vs(-1)and 1.5 GHz, respectively. The ability of the device to control the signal propagation at gigahertz level is experimentally tested by the impedance spectroscopy technique which proved the ability of the device to behave as bandpass filters of notch frequency of 1.49 GHz. The gamma-In2Se3/CuO heterojunction devices are also observed to display terahertz cutoff frequency values of approximate to 24 THz in the infrared (IR) range of incident photon energy and approximate to 193 THz in the ultraviolet light range. The nonlinear optical performance of the device nominates it for use as terahertz/gigahertz band filters.

Journal	Count
Journal of Electronic Materials	15
Crystal Research and Technology	13
physica status solidi (a)	12
Journal of Alloys and Compounds	11
Materials Science in Semiconductor Processing	11

Qasrawı, Atef Fayez Hasan

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