Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Scholarly Output

222

Articles

218

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WoS Citation Count

1887

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1907

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Subject: Cu2O

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Hot aluminum substrate induced hexagonal-tetragonal phase transitions in InSe and performance of Al/InSe/Cu2O pn tunneling devices
    (Wiley, 2020) Qasrawi, Atef Fayez; Kmail, Reham Reda
    In the current study, we have considered the induced phase transitions in Al/InSe thin film substrates and employing them for fabrication of InSe/Cu2O tunneling channels. The InSe substrates are observed to prefer the transition from the hexagonal gamma-In(2)Se(3)to the rarely observed tetragonal InSe. The phase transitions are obtained by the thermally assisted diffusion of aluminum, which was already kept at 250 degrees C in a vacuum media of 10(-5)mbar before the compensation of InSe. The tetragonal InSe also induced the crystallization of orthorhombic Cu2O with acceptable level of lattice matching along thea-axis. The Al/InSe/Cu2O/Au heterojunctions, which are electrically analyzed are observed to exhibit rectifying features with the current conduction being dominated by electric fields assisted thermionic emission (tunneling) through a barrier of width of 5.5 to 14.0 nm and barrier height of 0.19 to 0.30 eV. The ac analyses of the capacitance and conductance spectra of this device have shown that it can exhibit high/low capacitance and frequency dependent conductance switching modes at 0.12 GHz in addition to negative capacitance effect in the range of 0.12 to 1.80 GHz. The features of the device are promising as they indicate the suitability of the device for fabrication of field effect transistors, memory devices, and ultrafast switches.
  • Thumbnail Image
    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Enhancement of Nonlinear Optical and Dielectric Properties of Cu2o Films Sandwiched With Indium Slabs
    (Wiley-v C H verlag Gmbh, 2020) Omar, Ahmad; Qasrawi, Atef F.
    In this work, the effects of the insertion of indium slabs of thickness 100 nm on the performance of stacked layers of Cu2O are reported. Cu2O/In/Cu2O thin films coated onto ultrasonically cleaned glass substrates are structurally, morphologically, optically, and dielectrically studied. The glassy films of Cu2O display larger, well-ordered grains in an amorphous sea of Cu2O upon insertion of indium slabs between layers of Cu2O. Optically, the indium slabs increase the light absorbability in the IR region by 12.5 times, narrow the energy bandgap, and widen the energy band tails region. They also enhance the nonlinearity in the dielectric response and increase the dielectric constant values by 2.5 times. In addition, the optical conductivity parameters are obtained from the fittings of the dielectric spectra. The analyses reveal an enhancement in the drift mobility, plasmon frequency, and free carrier density via stacking of the indium layer between layers of Cu2O. The drift mobility and plasmon frequency values reach 232.4 cm(2) V-1 s(-1) and 3.95 GHz at a reduced hole-plasmon frequency value of 6.0 x 10(14) Hz (2.48 eV). The values are promising as they indicate the applicability of Cu2O/In/Cu2O interfaces in optoelectronics as thin film transistors and electromagnetic wave cavities.