Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Sustainable Development Goals

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11

SUSTAINABLE CITIES AND COMMUNITIES
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14

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6

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5

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9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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16

PEACE, JUSTICE AND STRONG INSTITUTIONS
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AFFORDABLE AND CLEAN ENERGY
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Scholarly Output

222

Articles

218

Views / Downloads

642/0

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0

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WoS Citation Count

1887

Scopus Citation Count

1907

WoS h-index

21

Scopus h-index

21

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WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Scholarly Output Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Structural, Optical and Electrical Properties of Bi1.5zn0.92< Pyrochlore Ceramics
    (Univ Fed Sao Carlos, dept Engenharia Materials, 2021) Qasrawi, A. F.; Abdalghafour, Mays A.; Mergen, A.
    Herein, the structural, morphological, compositional, optical, electrical and dielectric properties of Bi1.5Zn0.92Nb1.5-6x/5WxO6.92 (BZN) solid solutions are reported. Tungsten substituted BZN ceramics which are fabricated by the solid state reaction technique exhibited solubility limits at substitution level below x=0.18. Remarkable engineering in the structural, optical, electrical and dielectric properties of the pyrochlore ceramics is achieved via W substitution. Namely, shrinkage in both of the lattice parameters and in the energy band gap accompanied with decrease in the microstrain, in the dielectric constant and in the electrical resistivity is observed upon increasing the W content below the solubility limit. The increase in the W content in the BZN ceramics enhances the densification of the pyrochlore and leads to higher light absorbability and larger crystallites growth. The temperature dependent electrical resistivity measurements has also shown that the pyrochlore exhibit thermal stability below 380 K.
  • Thumbnail Image
    Article
    Citation - WoS: 11
    Cd-Doping Effects on the Properties of Polycrystalline Α-in2se3< Thin Films
    (Wiley-v C H verlag Gmbh, 2002) Qasrawi, AF
    The X-ray diffraction has revealed that the polycrystalline hexagonal structured alpha-In2Se3 thin films grown at substrate temperature of 200degreesC with the unit cell parameters a=4.03degreesA and c=19.23degreesA becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a=4.00degreesA and c=16.63degreesA by Cd-doping. The analysis of the conductivity temperature dependence in the range 300-40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd-doped samples, respectively. The photocurrent (I-ph) increases with increasing illumination intensity (T) and decreasing temperature up to a maximum temperature of similar to100 K, below which I-ph is temperature invariant. It is found to have the monomolecular and bimolccular recombination characters at low and high illumination intensities, respectively. The Cd-doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of I-ph on F at low illumination intensities.
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Tungsten Doped Bi1.5zn0.92< Ceramics Designed as Radio/Microwave Band Pass/Reject Filters
    (Wiley, 2021) Qasrawi, Atef F.; Abdalghafour, Mays A.; Mergen, A.
    Herein, radiowave/microwave bandpass/reject filters are fabricated from the tungsten doped Bi1.5Zn0.92Nb1.5-6x/5WxO6.92 (W-BZN) pyrochlore ceramics. The W-BZN band filters are prepared by the solid state reaction technique and subjected to X-ray diffraction (XRD) and impedance spectroscopy analyses. It was shown that the W-BZN filters can display negative capacitance effects accompanied with resonance-antiresonance oscillations. The calculations of the reflection coefficient parameter (S-11), the return loss (L-r) and the voltage standing wave ratios (VSWR) in the frequency domain of 0.01 to 1.80 GHz, has shown that the W-BZN device can perform as microwave cavities at two notch frequency values of 0.44 and 1.53 GHz. W-BZN devices can also be nominated as noise reducers and radiowave/microwave signal receivers suitable for telecommunication technology.
  • Thumbnail Image
    Article
    Citation - Scopus: 11
    Cd-Doping Effects on the Properties of Polycrystalline Α-In2se3 Thin Films
    (2002) Qasrawi,A.F.
    The X-ray diffraction has revealed that the polycrystalline hexagonal structured α-In2Se3 thin films grown at substrate temperature of 200°C with the unit cell parameters a=4.03°A and c=19.23°A becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a=4.00°A and c=16.63°A by Cd-doping. The analysis of the conductivity temperature dependence in the range 300-40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd-doped samples, respectively. The photocurrent (Iph) increases with increasing illumination intensity (F) and decreasing temperature up to a maximum temperature of ∼100 K, below which Iph is temperature invariant. It is found to have the monomolecular and bimolecular recombination characters at low and high illumination intensities, respectively. The Cd-doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of Iph on F at low illumination intensities.