Qasrawı, Atef Fayez Hasan
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Google Scholar ID
WoS Researcher ID
Sustainable Development Goals
1NO POVERTY
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2ZERO HUNGER
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3GOOD HEALTH AND WELL-BEING
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4QUALITY EDUCATION
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5GENDER EQUALITY
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6CLEAN WATER AND SANITATION
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7AFFORDABLE AND CLEAN ENERGY
17
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8DECENT WORK AND ECONOMIC GROWTH
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9INDUSTRY, INNOVATION AND INFRASTRUCTURE
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10REDUCED INEQUALITIES
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11SUSTAINABLE CITIES AND COMMUNITIES
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12RESPONSIBLE CONSUMPTION AND PRODUCTION
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13CLIMATE ACTION
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14LIFE BELOW WATER
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16PEACE, JUSTICE AND STRONG INSTITUTIONS
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This researcher does not have a Scopus ID.
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Scholarly Output
226
Articles
222
Views / Downloads
88/0
Supervised MSc Theses
0
Supervised PhD Theses
0
WoS Citation Count
1986
Scopus Citation Count
2002
Patents
0
Projects
0
WoS Citations per Publication
8.79
Scopus Citations per Publication
8.86
Open Access Source
17
Supervised Theses
0
| Journal | Count |
|---|---|
| Crystal Research and Technology | 16 |
| Journal of Electronic Materials | 15 |
| physica status solidi (a) | 12 |
| Materials Science in Semiconductor Processing | 11 |
| Journal of Alloys and Compounds | 11 |
Current Page: 1 / 11
Scopus Quartile Distribution
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13 results
Scholarly Output Search Results
Now showing 1 - 10 of 13
Article Citation - WoS: 3Citation - Scopus: 4Effects of Ge Substrate on the Structural and Optical Conductivity Parameters of Bi2o3< Thin Films(Elsevier Gmbh, 2019) Alharbi, S. R.; Qasrawi, A. F.In this article the structural, optical and dielectric properties of a 200 nm thick Bi2O3 thin films which are deposited onto amorphous germanium substrate are reported. Both of the Ge and Bi2O3 thin films are prepared by the thermal evaporation technique under vacuum pressure of 10 s mbar. Bi2O3 thin films are found to prefer the monoclinic nature of structure with larger values of microstrain, dislocation density, stacking faults and smaller grain sizes upon replacement of the glass substrate by germanium. Optically, significant redshift in the energy band gap is observed when the films are grown onto Ge. The Ge/Bi2O3 heterojunctions exhibit a conduction and valence band offsets of value of 0.81 and 1.38 eV, respectively. In addition to the enhancement in the dielectric constant near the IR region, the Drude-Lorentz modeling of the Ge/Bi2O3 heterojunctions has shown remarkable effect of the Ge substrate on the optical conductivity parameters of Bi2O3. Particularly, the drift mobility increased by about one order of magnitude, the free hole density decreased by (similar to)24 times and the plasmon frequency ranges extended from 5.21 to 11.0 GHz to 2.59-12.80 GHz when germanium substrate is used. The optical features of the heterojunction nominate it for visible light communication technology.Article Citation - WoS: 1Citation - Scopus: 1Structural, Optical and Dielectric Performance of Molybdenum Trioxide Thin Films Sandwiched With Indium Sheets(inst Materials Physics, 2020) Abusaa, M.; Qasrawi, A. F.; Kmail, H. K.; Khanfar, H. K.; Department of Electrical & Electronics EngineeringIn this work, we report the enhancements in the structural, optical and dielectric properties of molybdenum trioxide that are achieved by insertion of 50 and 100 nm thick indium sheets between layers of MoO3. The films which are coated onto ultrasonically glass substrates under a vacuum pressure of 10 -5 mbar exhibited metal induced crystallization process upon insertion of indium sheets. Optically, indium sheets tuned the transmittance and reflectance, significantly, increased the absorption coefficient values and formed interbands in the band gap of MoO3. The energy band gap decreased with increasing indium sheets thickness. On the other hand, the insertion of indium layers into the structure of MoO3 is observed to improve the dielectric response of these films to values that nominate them for used in thin film transistor technology. In the same context, the analyses of the optical conductivity which are carried out with the help of Drude-Lorentz approach have shown that the presence of indium sheets can increase the optical conductivity and enhance the plasmon frequency and free charge carrier density of MoO3. The plasmon frequency is tuned in the range of 1.68-7.16 GHz making MoO3 films attractive for plasmonic applications.Article Citation - WoS: 2Citation - Scopus: 2Role of Au Nanosheets in Enhancing the Performance of Yb/Zns Tunneling Photosensors(Natl inst R&d Materials Physics, 2020) Abusaa, M.; Qasrawi, A. F.; Assad, B. M.; Khanfar, H. K.; Asaad, B.M.In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10(-5) mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of similar to 10(5) at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers.Article Citation - WoS: 9Citation - Scopus: 9Optical Dynamics in the Ag/Α-ga2< Layer System(Elsevier Sci Ltd, 2018) Alharbi, S. R.; Qasrawi, A. F.In this work, thin films of Ga2S3 are deposited onto 150 nm thick transparent Ag substrate by the physical vapor deposition technique under vacuum pressure of 10(-5) mbar. The films are studied by the X-ray diffraction and optical spectrophotometry techniques. It is found that the Ag substrate induced the formation of the monoclinic alpha-Ga2S3 polycrystals. The transparent Ag substrate also changed the preferred optical transition in Ga2S3 from direct to indirect It also increased the light absorption by 79 and 23 times at incident light energies of 2.01 and 2.48 eV, respectively. In addition, a red shift in all types of optical transitions is observed. Some the extended energy band tails of Ag appears to form interbands in the band gap of Ga2S3. These interbands strongly attenuated the dielectric and optical conduction parameters. Particularly, an enhancement in the dielectric constant values and response to incident electromagnetic field is observed. The Drude-Lorentz modeling of this interface has shown that the free carrier density, drift mobility, plasmon frequency and reduced electron-plasmon frequency in Ga2S3 increases when the Ag substrate replaced the glass or other metals like Yb, Al and Au. The nonlinear optical dynamics of the Ag/Ga2S3 are promising as they indicate the applicability of this interface for optoelectronic applications.Article Citation - WoS: 12Citation - Scopus: 11Investigation of the Structural and Optoelectronic Properties of the Se/Ga2< Heterojunctions(Elsevier Science Sa, 2018) Qasrawi, A. F.In the current study, the structural and optical properties of the Se/Ga2S3 heterojunctions are investigated by means of X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The optical interface which was prepared by the physical vapor deposition technique, comprises a polycrystalline orthorhombic selenium layer of thickness of 500 nm coated with amorphous layer of 200 nm thick Ga2S3. The top layer is observed to cause yield stress on the Se layer leading to strained type interface. Optically, the evaporation of Ga2S3 onto selenium blue shifted the energy band gap of Se. The conduction and valence band offsets exhibited values of 1.28 and 0.20 eV, respectively. On the other hand, the optical conductivity spectra which were studied and modeled by the Drude-Lorentz approach in the terahertz frequency domain of 275-675 THz revealed enhanced optical conduction parameters. The use of Se as substrate to Ga2S3 enhanced the drift mobility and plasmon frequency of the Ga2S3. The value of the drift mobility reached 64 cm(2)/Vs at plasmon frequency of 2.04 GHz. In addition, the Se/Ga2S3 interface are observed to exhibit high biasing dependent photosensitivity to visible light irradiation. Such properties of this interface nominate it for use in optoelectronics including visible light communications. (C) 2018 Elsevier B.V. All rights reserved.Article Citation - WoS: 10Citation - Scopus: 9Structural and Optoelectronic Properties of Moo3 Interfaces(Wiley-v C H verlag Gmbh, 2019) Alharbi, Seham Reef; Qasrawi, Atef FayezIn this article, the authors discuss the growth nature, the structural, optical and dielectric properties of CuSe thin films deposited onto MoO3 substrate. The films are studied by the X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and ultraviolet-visible light spectroscopy techniques. CuSe thin films are observed to exhibit strained nature of growth when grown onto MoO3 amorphous substrates. Optically, the MoO3/CuSe films are found to exhibit conduction (Delta Ec) and valence (Delta Ev) band offsets of values of 3.70 and 3.42 eV, respectively. In addition, a remarkable increase in the absorbability (R lambda) of MoO3 by 72 times at 3.0 eV is obtained as a result of coating it with CuSe. The Delta Ec, Delta Ev, and R lambda values are significantly high and nominate the MoO3/CuSe interfaces for use in many optoelectronic applications. In addition, the dielectric analysis shows that the MoO3/CuSe heterojunction exhibit optical conductivity parameters that make it suitable for use in optical communications. Particularly, the Drude-Lorentz modeling of the imaginary part of the dielectric constant for the MoO3/CuSe interfaces displays mobility and plasmon frequency values of 7.76 cm(2) V-1 s(-1) and 3.78 GHz, respectively. The obtained plasmon frequency values indicate the applicability of this device in microwave technology.Article Citation - WoS: 4Citation - Scopus: 4Characterization of the Ge/Bi2< Interfaces(Univ Fed Sao Carlos, dept Engenharia Materials, 2019) Alharbi, Seham Reef; Qasrawi, Atef FayezIn this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.Article Citation - WoS: 4Citation - Scopus: 4Structural, Compositional and Optical Properties of Gallium Selenide Thin Films Doped With Cadmium(Wiley-v C H verlag Gmbh, 2008) Qasrawi, A. F.; Saleh, A. A.Polycrystalline cadmium doped gallium selenide thin films were obtained by the thermal co-evaporation of GaSe crystals and Cd grains onto glass substrates. The structural, compositional and optical properties of these films have been investigated by means of X-ray diffraction, energy dispersive X-ray analysis and UV-visible spectroscopy techniques, respectively. Particularly, the elemental analysis, the crystalline nature, the energy band gap, the refractive index, the dispersion energy and static dielectric constant have been identified. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct forbidden energy band gap of 1.22 eV. The cadmium doping has caused a significant decrease in the values of the energy band gap and in all the dispersive optical parameters, as well. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinbeim.Article Citation - WoS: 3Citation - Scopus: 3Enhancement of the Performance of the Cu2se Band Filters Via Yb Nanosandwiching(Wiley, 2019) Khusayfan, Najla M.; Qasrawı, Atef Fayez Hasan; Qasrawi, A. F.; Khanfar, Hazem K.; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics EngineeringIn this article, we report the experimental and theoretical modeling on the band pass filters that are made of two thin film layers of Cu2Se coated onto aluminum substrates and nanosandwiched with 50 nm ytterbium layers. The nanosandwiching of Yb between two layers of Cu2Se is found to decrease the lattice constant, the defect density, and the strain and increase the grain size in the Cu2Se. Electrically, it is observed that, Al/Cu2Se/Al structure exhibits wave trap characteristics with notch frequency of 1.31 GHz. The Yb-layers improved the performance of the band pass filters by increasing the amplitude of the reflection coefficients, increasing the return loss values and decreasing the voltage standing wave ratios. The calculated conduction and wave trapping parameters nominate the Yb-nanosandwiched Cu2Se films for use in communication technology as they exhibit negative capacitance effect and narrow band pass range.Article Citation - Scopus: 2Role of au nanosheets in enhancing the performance of yb/zns/cds/au tunneling photosensors(S.C. Virtual Company of Phisics S.R.L, 2020) Abusaa,M.; Qasrawi,A.F.; Asaad,B.M.; Khanfar,H.K.In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10-5 mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of ~105 at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers. © 2020, S.C. Virtual Company of Phisics S.R.L. All rights reserved.
