Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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QUALITY EDUCATION4
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GENDER EQUALITY5
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CLEAN WATER AND SANITATION6
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AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
17
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DECENT WORK AND ECONOMIC GROWTH8
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INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
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SUSTAINABLE CITIES AND COMMUNITIES11
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LIFE ON LAND15
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Scholarly Output

226

Articles

222

Views / Downloads

677/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1894

Scopus Citation Count

1915

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0

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0

WoS Citations per Publication

8.38

Scopus Citations per Publication

8.47

Open Access Source

17

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0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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End date: 2021Start date: 2020

Scholarly Output Search Results

Now showing 1 - 10 of 32
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Structural, Optical and Dielectric Performance of Molybdenum Trioxide Thin Films Sandwiched With Indium Sheets
    (inst Materials Physics, 2020) Abusaa, M.; Qasrawi, A. F.; Kmail, H. K.; Khanfar, H. K.; Department of Electrical & Electronics Engineering
    In this work, we report the enhancements in the structural, optical and dielectric properties of molybdenum trioxide that are achieved by insertion of 50 and 100 nm thick indium sheets between layers of MoO3. The films which are coated onto ultrasonically glass substrates under a vacuum pressure of 10 -5 mbar exhibited metal induced crystallization process upon insertion of indium sheets. Optically, indium sheets tuned the transmittance and reflectance, significantly, increased the absorption coefficient values and formed interbands in the band gap of MoO3. The energy band gap decreased with increasing indium sheets thickness. On the other hand, the insertion of indium layers into the structure of MoO3 is observed to improve the dielectric response of these films to values that nominate them for used in thin film transistor technology. In the same context, the analyses of the optical conductivity which are carried out with the help of Drude-Lorentz approach have shown that the presence of indium sheets can increase the optical conductivity and enhance the plasmon frequency and free charge carrier density of MoO3. The plasmon frequency is tuned in the range of 1.68-7.16 GHz making MoO3 films attractive for plasmonic applications.
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    Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Structural and Dielectric Properties of Ba1-x< Solid Solutions
    (Wiley-v C H verlag Gmbh, 2021) Qasrawi, A. F.; Sahin, Ethem Ilhan; Abed, Tamara Y.; Emek, Mehriban
    Herein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1-xLax(Zn1/3Nb2/3)O-3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02-0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La-doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 degrees C. In the temperature range of 20-120 degrees C, La doping changes the temperature coefficient of dielectric constants from +30 ppm degrees C-1 in pure samples to -341 ppm degrees C-1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.
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    Article
    Citation - WoS: 2
    Role of Au Nanosheets in Enhancing the Performance of Yb/Zns Tunneling Photosensors
    (Natl inst R&d Materials Physics, 2020) Abusaa, M.; Qasrawi, A. F.; Assad, B. M.; Khanfar, H. K.; Asaad, B.M.
    In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10(-5) mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of similar to 10(5) at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers.
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    Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Structural, Optical and Electrical Properties of Bi1.5zn0.92< Pyrochlore Ceramics
    (Univ Fed Sao Carlos, dept Engenharia Materials, 2021) Qasrawi, A. F.; Abdalghafour, Mays A.; Mergen, A.
    Herein, the structural, morphological, compositional, optical, electrical and dielectric properties of Bi1.5Zn0.92Nb1.5-6x/5WxO6.92 (BZN) solid solutions are reported. Tungsten substituted BZN ceramics which are fabricated by the solid state reaction technique exhibited solubility limits at substitution level below x=0.18. Remarkable engineering in the structural, optical, electrical and dielectric properties of the pyrochlore ceramics is achieved via W substitution. Namely, shrinkage in both of the lattice parameters and in the energy band gap accompanied with decrease in the microstrain, in the dielectric constant and in the electrical resistivity is observed upon increasing the W content below the solubility limit. The increase in the W content in the BZN ceramics enhances the densification of the pyrochlore and leads to higher light absorbability and larger crystallites growth. The temperature dependent electrical resistivity measurements has also shown that the pyrochlore exhibit thermal stability below 380 K.
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    Article
    Citation - WoS: 14
    Citation - Scopus: 13
    Enhancement of Electrical Performance of Znse Thin Films Via Au Nanosandwiching
    (Sciendo, 2020) Qasrawi, A. F.; Taleb, Maram F.
    In this work, we report the effect of sandwiching of Au nanosheets on the structural and electrical properties of ZnSe thin films. The ZnSe films which are grown by the thermal evaporation technique onto glass and yttrium thin film substrates exhibit lattice deformation accompanied with lattice constant extension, grain size reduction and increased defect density upon Au nanosandwiching. The temperature dependent direct current conductivity analysis has shown that the 70 nm thick Au layers successfully increased the electrical conductivity by three orders of magnitude without causing degeneracy. On the other hand, the alternating current conductivity studies in the frequency domain of 10 MHz to 1800 MHz have shown that the alternating current conduction in ZnSe is dominated by both of quantum mechanical tunneling and correlated barrier hopping of electrons over the energy barriers formed at the grain boundaries. The Au nanosheets are observed to increase the density of localized states near Fermi level and reduce the average hopping energy by similar to 5 times. The conductivity, capacitance, impedance and reflection coefficient spectral analyses have shown that the nanosandwiching of Au between two layers of ZnSe makes the zinc selenide more appropriate for electronic applications and for applications which need microwave cavities.
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    Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Enhancing the Optoelectronic Performance of As2se3< Thin Films Via Ag Slabs Sandwiching
    (Elsevier Gmbh, 2020) Qasrawi, A. F.; Alharbi, Seham Reef
    In this work, the effects of insertion of Ag slabs of thicknesses of 50, 100 and 200 nm between layers of arsenic selenide are reported. The glassy structured As2Se3 is characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, ultraviolet-visible light spectrophotometry and impedance spectroscopy techniques. While the two stacked layers of As2Se3 exhibited high absorption and energy band gap values that nominate them for optoelectronic applications, the Ag slabs enhanced the light absorbability by 3.98, 5.77, 6.13 times and shrunk the energy band gap by 1.16 %, 7.40 % and 13.8 % for Ag slabs of thicknesses of 50, 100 and 200 nm, respectively. In addition, even though the As2Se3/As2Se3 layers exhibited negative capacitance effect in the frequency domain of 0.01-1.80 GHz, the insertion of Ag slabs removed the negative capacitance effect and forced the capacitance spectra to exhibit resonance at critical frequency of value of 0.23 GHz. The modeling of the capacitance spectra have shown that the geometrical capacitance is increased by one order of magnitude upon Ag slabs insertion. The dynamic capacitance is limited by electrons (holes) plasmonic interaction at the interface between the As2Se3/Ag/As2Se3 layers. Furthermore, the capacitance- voltage characteristics of the As2Se3/Ag/As2Se3 films confirmed the suitability of the devices to exhibit MOS device features. The characteristics of the stacked layers of As2Se3 indicate their multi-functionality as an optical absorbers/receivers and as microwave cavities.
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    Article
    Citation - WoS: 5
    Citation - Scopus: 4
    Thickness and Annealing Effects on the Structural and Optical Conductivity Parameters of Zinc Phthalocyanine Thin Films
    (inst Materials Physics, 2020) Alharbi, S. R.; Qasrawi, A. F.; Khusayfan, N. M.; Department of Electrical & Electronics Engineering
    In this work, the effects of the thin film thicknesses on the structural, optical absorption, energy band gap, dielectric spectra and optical conductivity parameters of the Zinc phthalocyanine thin films are considered. Thin films of ZnPc of thicknesses of 50-600 nm which are coated onto glass substrates are observed to exhibit amorphous nature of growth. The polycrystalline monoclinic ZnPc phase of the films is obtained via annealing the films at 200 degrees C in a vacuum atmosphere. Increasing the ZnPc films thickness shrunk the energy band gap in the B- and Q- bands and decreased both of the optical conductivities and free holes density in the Q-band. The increase in the film thickness is also observed to decrease the plasmon frequency and the drift mobility of holes in the films. The highest dielectric constant is obtained for films of thicknesses of 100 nm. The annealing process enhanced the optical absorption, redshifts the energy band gap value and the critical energy of the absolute maxima of dielectric constant. In addition, while the heat treatment enhanced both of the scattering times at femtosecond level and the drift mobility, it reduced the free holes density, and the plasmon frequency.
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    Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Optical Dynamics at the Au/Znpc Interfaces
    (Univ Fed Sao Carlos, dept Engenharia Materials, 2020) Qasrawi, A. F.; Zyoud, Hadeel M.
    In this work, the optical dynamics and the structural properties of the zinc phthalocyanine which are coated onto 150 nm thick Au substrates are studied by the X-ray diffraction and optical spectrophotometry techniques. The Au/ZnPc interfaces appears to be strongly affected by the large lattice mismatches at the interface. It is observed that the coating ZnPc onto Au substrates increases the light absorbability by 4.7 and 128.2 times in the visible and infrared regions of light, respectively. Au substrates activated the free carrier absorption mechanism in the ZnPc thin films in the infrared range of light. In addition, the transparent Au substrates forced narrowing the energy band gap in both of the Q and B bands. It also increased the dielectric constant value by similar to 3.5 times in the IR range. The enhancements in the optical properties of ZnPc that resulted from the thin Au substrates make the ZnPc more suitable for optoelectronic, nonlinear optical applications and for electromagnetic energy storage in the infrared range of light.
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    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Ytterbium Induced Structural Phase Transitions and Their Effects on the Optical and Electrical Properties of Znpc Thin Films
    (Springer, 2020) Qasrawi, A. F.; Zyoud, Hadeel M.
    In this work, the effects of ytterbium substrates of thicknesses of 150 (Yb-150) and 1000 nm (Yb-1000) on the structural, optical and electrical properties of zinc phthalocyanine (ZnPc) are investigated. While the Yb-150/ZnPc exhibited strained monoclinic structure, the Yb-1000/ZnPc thin films are observed to exhibit phase transitions from monoclinic to triclinic structure. Analysis which targeted observatories of the effects of the Yb-150 substrate on the optical properties indicated that the transparent Yb-150 substrate enhanced the light absorbability by more than 11 times at 1.27 eV. On the other hand, the impedance spectroscopy measurements on the nontransparent Yb-1000/ZnPc/Ag sandwiched structures have shown that these devices could exhibit negative capacitance (NC) effect in the frequency domain of 0.244-1.800 GHz. The NC effect is associated with resonance-anti-resonance response at 0.235 and 0.244 GHz, respectively. The structural, optical and electrical properties of the Yb/ZnPc interfaces indicate its applicability as optoelectronic and/or radio/microwave components.
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    Article
    Citation - WoS: 27
    Citation - Scopus: 30
    Effects of Au Nanoslabs on the Performance of Cdo Thin Films Designed for Optoelectronic Applications
    (Elsevier, 2021) Alharbi, Seham Reef; Qasrawi, A. F.
    In this work, the effect of 50 nm thick gold nanosheets on the structural, morphological, optical and electrical properties of stacked layers of CdO are investigated. The insertion of Au nanoslabs decreased the lattice parameters of the cubic unit cells of CdO. It also decreased the microstrain, the defect density, the stacking fault percentage and increased the crystallite and grain sizes. Optically, the light absorbability is enhanced, the energy band gap is shrunk and the optical conductivity is increased. The optical conductivity parameters presented by scattering time, plasmon frequency, drift mobility and free carrier density are all engineered via participation of Au nanosheets. On the other hand, electrical measurements in the frequency domain of 0.01-1.80 GHz indicated that the Au nanosheets forced the capacitance spectra to exhibit negative values and increased the electrical conductivity in the studied frequency domain. The terahertz cutoff frequency is tuned in the range of 5.0-22.0 THz indicating the applicability of the CdO/Au/CdO (CAC) films as terahertz filters. The direct current electrical conductivity measurements have shown that while the CC samples exhibit nondegenerate extrinsic nature of conduction, the CAC samples displayed degenerate/nondegenerate transitions at 400 K. With the feature of negative capacitance that can be used for noise reduction and parasitic capacitance cancellation, the CAC films can be regarded as promising structure for multifunctional device applications.