Qasrawı, Atef Fayez Hasan
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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WoS Researcher ID
Sustainable Development Goals
1NO POVERTY
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2ZERO HUNGER
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3GOOD HEALTH AND WELL-BEING
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4QUALITY EDUCATION
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5GENDER EQUALITY
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6CLEAN WATER AND SANITATION
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7AFFORDABLE AND CLEAN ENERGY
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8DECENT WORK AND ECONOMIC GROWTH
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9INDUSTRY, INNOVATION AND INFRASTRUCTURE
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12RESPONSIBLE CONSUMPTION AND PRODUCTION
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This researcher does not have a Scopus ID.
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Scholarly Output
226
Articles
222
Views / Downloads
84/0
Supervised MSc Theses
0
Supervised PhD Theses
0
WoS Citation Count
1984
Scopus Citation Count
2000
Patents
0
Projects
0
WoS Citations per Publication
8.78
Scopus Citations per Publication
8.85
Open Access Source
17
Supervised Theses
0
| Journal | Count |
|---|---|
| Crystal Research and Technology | 16 |
| Journal of Electronic Materials | 15 |
| physica status solidi (a) | 12 |
| Materials Science in Semiconductor Processing | 11 |
| Journal of Alloys and Compounds | 11 |
Current Page: 1 / 11
Scopus Quartile Distribution
Competency Cloud
63 results
Scholarly Output Search Results
Now showing 1 - 10 of 63
Article Citation - WoS: 5Citation - Scopus: 5Acoustic Phonons Scattering Mobility and Carrier Effective Mass in In6s7< Crystals(Elsevier Science Sa, 2006) Qasrawi, A. F.; Gasanly, N. M.Systematic dark electrical resistivity and Hall coefficient measurements have been carried out in the temperature range of 170-320 K on n-type In6S7 crystals. The analysis of the electrical resistivity and carrier concentration reveals the intrinsic type of conduction with an average energy band gap of similar to 0.75 eV The carrier effective masses of the conduction and valence bands were calculated from the intrinsic temperature-dependent carrier concentration data and were found to be 0.565m(0) and 2.020m(0), respectively. The temperature-dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analyzed assuming the domination of acoustic phonons scattering. The acoustic phonons scattering mobility was calculated from the crystal's structural data with no assumptions. The experimental Hall mobility data of In6S7 crystals coincides with the theoretical acoustic phonons scattering mobility data with acoustic deformation potential of 6.4 eV. (c) 2006 Elsevier B.V. All rights reserved.Conference Object Citation - WoS: 10Production of Anorthite From Kaolinite and Caco3 Via Colemanite(Trans Tech Publications Ltd, 2004) Mergen, A; Kayed, TS; Bilen, M; Qasrawi, AF; Gürü, MBoron oxide has been found to be useful flux for the preparation of dense anorthite ceramics (CaO.Al2O3.2SiO(2)). Inexpensive starting materials of kaolinite, calcium carbonate and silica were used for anorthite ceramic production. Colemanite (2CaO.3B(2)O(3).5H(2)O) was added into the mixtures and the effects of colemanite upon the transformation towards anorthite and on the densification were investigated between 900-1400 degreesC. Single phase anorthite ceramic formed at lower temperatures in boron containing mixtures. Boron containing powder compacts were sintered above 90% theoretical density at 1350 degreesC.Article Hopping Conduction in Ga4se3< Layered Single Crystals(Pergamon-elsevier Science Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were found to be 7.20 x 10(15) cm(-3) eV(-1) and 7.56 x 10(-6) cm, respectively. When the sample was illuminated, the Mott's VRH parameters are altered, particularly, the average hopping distance and the density of states near the Fermi level increase when light intensity increases. This action is attributed to the electron generation by photon absorption, which in turn leads to the Fermi level shift and/or trap density reduction by electron-hole recombination. (C) 2008 Elsevier Ltd. All rights reserved.Article Citation - WoS: 1Citation - Scopus: 1Hole-Polar Phonon Interaction Scattering Mobility in Chain Structured Tlse0.75s0.25< Crystals(Wiley-blackwell, 2009) Qasrawi, A. F.; Gasanly, N. M.In this study, the electrical resistivity, charge carriers density and Hall mobility of chain structured TlSe0.75S0.25 crystal have been measured and analyzed to establish the dominant scattering mechanism in crystal. The data analyses have shown that this crystal exhibits an extrinsic p-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of three energy levels located at 280 meV, 68 meV and 48 meV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The carrier concentration data were best reproduced assuming the existence of an acceptor impurity level being located at 68 meV consistent with that observed from resistivity measurement, The model allowed the determination of the hole effective mass and the acceptor-donor concentration difference as 0.44m(0) and 2.2 x 10(12) cm(-3), respectively. The Hall mobility of the TlSe0.75S0.25 crystal is found to be limited by the scattering of charged carriers over the (chain) boundaries and the scattering of hole-polar phonon interactions above and below 300 K, respectively. The value of the energy barrier height at the chain boundaries was found to be 261 meV. The polar phonon scattering mobility revealed the high-frequency and static dielectric constants of 13.6 and 15.0, respectively. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimArticle Citation - Scopus: 13Carrier Transport Properties of Ins Single Crystals(2002) Qasrawi,A.F.; Gasanly,N.M.The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Citation - WoS: 10Citation - Scopus: 11Dispersive Optical Constants of Thermally Deposited Agin5s8< Thin Films(Elsevier Science Sa, 2008) Qasrawi, A. F.Agln(5)S(8) thin films were obtained by the thermal evaporation of Agln(5)S(8) crystals onto ultrasonically cleaned glass substrates. The films are found to exhibit polycrystalline cubic structure. The calculated lattice parameter of the unit cell (a) is 10.78 angstrom. The transmittance data of the as grown films which was recorded at 300 K in the incidence wavelength (lambda) range of 320-1000 nm are used to calculate the refractive, n(lambda). The transmittance and reflectance data are also used to calculate the absorption coefficient of the as grown Agln5S8 thin films. The fundamental absorption edge is found to be corresponding to a direct allowed transitions energy band gap. This band-to-band transition energy is found to be 1.78 eV and it is consistent with that reported for Agln(5)S(8) single crystals. (c) 2007 Elsevier B.V. All rights reserved.Article Citation - WoS: 5Citation - Scopus: 5Dispersive Optical Constants of Tl2ingase4< Single Crystals(Iop Publishing Ltd, 2007) Qasrawi, A. F.; Gasanly, N. M.The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investigated by means of room temperature x-ray diffraction, and transmittance and reflectance spectral analysis, respectively. The x-ray diffraction technique has shown that Tl2InGaSe4 is a single phase crystal of a monoclinic unit cell that exhibits the lattice parameters of a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees . The optical data have revealed an indirect allowed transition band gap of 1.86 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 28.51 and 3.45 eV, 9.26 and 3.04, respectively.Article Citation - WoS: 18Citation - Scopus: 18Growth, Electrical and Structural Characterization of Β-Gase Thin Films(Springer, 2003) Parlak, M; Qasrawi, AF; Erçelebi, ÇGaSe thin films were deposited onto the glass substrates kept at 200degrees and 300degreesC by the thermal evaporation of GaSe crystals under the pressure of 10(-5) Torr. X-ray analysis of the films revealed that films grown at 200. C are amorphous in nature while the films grown at 300degreesC are polycrystalline beta-GaSe. The temperature dependent electrical conductivity measurements in the region of 320-100 K for the films grown at 300degreesC showed that the transport mechanisms are the thermionic emission of charged carriers and the variable range hopping above and below 180 K, respectively. Space charge limited current (SCLC) studies have also been performed on these films through the current-voltage measurements at different temperatures and a dominant hole trap at 0.233 eV from the top of the valance band with a trap density of similar to1.6 x 10(11) cm(-3) is identified. (C) 2003 Kluwer Academic Publishers.Article Citation - WoS: 9Citation - Scopus: 10Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals(Wiley-VCH Verlag GmbH, 2002) Qasrawi, AF; Gasanly, NMSystematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.Article Citation - WoS: 3Citation - Scopus: 3Optoelectronic Properties of Ga4se3< Single Crystals(Iop Publishing Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.; Ilaiwi, K. F.The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range of 2.01-2.35 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.08 eV at 300 K) that exhibits a temperature coefficient of -95 x 10(-4) eVK(-1).
