Qasrawı, Atef Fayez Hasan

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Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

NO POVERTY1
NO POVERTY
0
Research Products
ZERO HUNGER2
ZERO HUNGER
0
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GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
0
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QUALITY EDUCATION4
QUALITY EDUCATION
0
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GENDER EQUALITY5
GENDER EQUALITY
0
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CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
0
Research Products
AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
17
Research Products
DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
0
Research Products
INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
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REDUCED INEQUALITIES10
REDUCED INEQUALITIES
0
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SUSTAINABLE CITIES AND COMMUNITIES11
SUSTAINABLE CITIES AND COMMUNITIES
0
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RESPONSIBLE CONSUMPTION AND PRODUCTION12
RESPONSIBLE CONSUMPTION AND PRODUCTION
0
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CLIMATE ACTION13
CLIMATE ACTION
0
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LIFE BELOW WATER14
LIFE BELOW WATER
0
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LIFE ON LAND15
LIFE ON LAND
0
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PEACE, JUSTICE AND STRONG INSTITUTIONS16
PEACE, JUSTICE AND STRONG INSTITUTIONS
1
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PARTNERSHIPS FOR THE GOALS17
PARTNERSHIPS FOR THE GOALS
0
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This researcher does not have a Scopus ID.
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Scholarly Output

226

Articles

222

Views / Downloads

87/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1984

Scopus Citation Count

2000

Patents

0

Projects

0

WoS Citations per Publication

8.78

Scopus Citations per Publication

8.85

Open Access Source

17

Supervised Theses

0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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Author: Qasrawi,A.F.End date: 2009

Scholarly Output Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Article
    Citation - Scopus: 13
    Carrier Transport Properties of Ins Single Crystals
    (2002) Qasrawi,A.F.; Gasanly,N.M.
    The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
  • Thumbnail Image
    Article
    Carrier Transport Properties of Ins Single Crystals
    (2002) Qasrawi,A.F.; Gasanly,N.M.
    The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Carrier Transport Properties of Ins Single Crystals
    (Wiley-Blackwell, 2002) Qasrawi,A.F.; Gasanly,N.M.
    The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
  • Thumbnail Image
    Article
    Citation - WoS: 11
    Citation - Scopus: 11
    Cd-Doping Effects on the Properties of Polycrystalline Α-In2se3 Thin Films
    (Wiley-VCH Verlag GmbH, 2002) Qasrawi,A.F.
    The X-ray diffraction has revealed that the polycrystalline hexagonal structured α-In2Se3 thin films grown at substrate temperature of 200°C with the unit cell parameters a=4.03°A and c=19.23°A becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a=4.00°A and c=16.63°A by Cd-doping. The analysis of the conductivity temperature dependence in the range 300-40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd-doped samples, respectively. The photocurrent (Iph) increases with increasing illumination intensity (F) and decreasing temperature up to a maximum temperature of ∼100 K, below which Iph is temperature invariant. It is found to have the monomolecular and bimolecular recombination characters at low and high illumination intensities, respectively. The Cd-doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of Iph on F at low illumination intensities.
  • Thumbnail Image
    Conference Object
    Citation - Scopus: 12
    Production of Anorthite From Kaolinite and Caco3 Via Colemanite
    (Trans Tech Publications Ltd, 2004) Mergen,A.; Kayed,T.S.; Bilen,M.; Qasrawi,A.F.; Gürü,M.
    Boron oxide has been found to be useful flux for the preparation of dense anorthite ceramics (CaO.Al2O3.2SiO2). Inexpensive starting materials of kaolinite, calcium carbonate and silica were used for anorthite ceramic production. Colemanite (2CaO.3B2O 3.5H2O) was added into the mixtures and the effects of colemanite upon the transformation towards anorthite and on the densification were investigated between 900-1400°C. Single phase anorthite ceramic formed at lower temperatures in boron containing mixtures. Boron containing powder compacts were sintered above 90% theoretical density at 1350°C.