Qasrawı, Atef Fayez Hasan

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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

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11

SUSTAINABLE CITIES AND COMMUNITIES
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14

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6

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9

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This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

222

Articles

218

Views / Downloads

639/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1887

Scopus Citation Count

1907

WoS h-index

21

Scopus h-index

21

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0

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0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

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0

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Scholarly Output Search Results

Now showing 1 - 1 of 1
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Enhancement of Nonlinear Optical and Dielectric Properties of Cu2o Films Sandwiched With Indium Slabs
    (Wiley-v C H verlag Gmbh, 2020) Omar, Ahmad; Qasrawi, Atef F.
    In this work, the effects of the insertion of indium slabs of thickness 100 nm on the performance of stacked layers of Cu2O are reported. Cu2O/In/Cu2O thin films coated onto ultrasonically cleaned glass substrates are structurally, morphologically, optically, and dielectrically studied. The glassy films of Cu2O display larger, well-ordered grains in an amorphous sea of Cu2O upon insertion of indium slabs between layers of Cu2O. Optically, the indium slabs increase the light absorbability in the IR region by 12.5 times, narrow the energy bandgap, and widen the energy band tails region. They also enhance the nonlinearity in the dielectric response and increase the dielectric constant values by 2.5 times. In addition, the optical conductivity parameters are obtained from the fittings of the dielectric spectra. The analyses reveal an enhancement in the drift mobility, plasmon frequency, and free carrier density via stacking of the indium layer between layers of Cu2O. The drift mobility and plasmon frequency values reach 232.4 cm(2) V-1 s(-1) and 3.95 GHz at a reduced hole-plasmon frequency value of 6.0 x 10(14) Hz (2.48 eV). The values are promising as they indicate the applicability of Cu2O/In/Cu2O interfaces in optoelectronics as thin film transistors and electromagnetic wave cavities.