Qasrawı, Atef Fayez Hasan

Profile Picture
Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

2

ZERO HUNGER
ZERO HUNGER Logo

0

Research Products

11

SUSTAINABLE CITIES AND COMMUNITIES
SUSTAINABLE CITIES AND COMMUNITIES Logo

0

Research Products

14

LIFE BELOW WATER
LIFE BELOW WATER Logo

0

Research Products

6

CLEAN WATER AND SANITATION
CLEAN WATER AND SANITATION Logo

0

Research Products

1

NO POVERTY
NO POVERTY Logo

0

Research Products

5

GENDER EQUALITY
GENDER EQUALITY Logo

0

Research Products

9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
INDUSTRY, INNOVATION AND INFRASTRUCTURE Logo

0

Research Products

16

PEACE, JUSTICE AND STRONG INSTITUTIONS
PEACE, JUSTICE AND STRONG INSTITUTIONS Logo

1

Research Products

17

PARTNERSHIPS FOR THE GOALS
PARTNERSHIPS FOR THE GOALS Logo

0

Research Products

15

LIFE ON LAND
LIFE ON LAND Logo

0

Research Products

10

REDUCED INEQUALITIES
REDUCED INEQUALITIES Logo

0

Research Products

7

AFFORDABLE AND CLEAN ENERGY
AFFORDABLE AND CLEAN ENERGY Logo

17

Research Products

8

DECENT WORK AND ECONOMIC GROWTH
DECENT WORK AND ECONOMIC GROWTH Logo

0

Research Products

4

QUALITY EDUCATION
QUALITY EDUCATION Logo

0

Research Products

12

RESPONSIBLE CONSUMPTION AND PRODUCTION
RESPONSIBLE CONSUMPTION AND PRODUCTION Logo

0

Research Products

3

GOOD HEALTH AND WELL-BEING
GOOD HEALTH AND WELL-BEING Logo

0

Research Products

13

CLIMATE ACTION
CLIMATE ACTION Logo

0

Research Products
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

222

Articles

218

Views / Downloads

640/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1887

Scopus Citation Count

1906

WoS h-index

21

Scopus h-index

21

Patents

0

Projects

0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

Supervised Theses

0

Google Analytics Visitor Traffic

JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
Current Page: 1 / 11

Scopus Quartile Distribution

Competency Cloud

GCRIS Competency Cloud

Filters

20181
Reset filters

Settings

Author: Nazzal, Eman O.Subject: Plasmon

Scholarly Output Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Article
    Citation - WoS: 18
    Citation - Scopus: 21
    Engineering the Optical and Dielectric Properties of the Ga2s3< Nanosandwiches Via Indium Layer Thickness
    (Springer, 2018) Nazzal, Eman O.; Qasrawi, A. F.; Alharbi, S. R.
    In this study, the effect of the nanosandwiched indium slab thickness (20-200 nm) on the performance of the Ga2S3/In/Ga2S3 interfaces is explored by means of X-ray diffraction, Raman spectroscopy, and optical spectroscopy techniques. The indium slab thickness which was varied in the range of 20-200 nm is observed to enhance the visible light absorbability of the Ga2S3 by 54.6 times, engineered the energy band gap in the range of 3.7-1.4 eV and increases the dielectric constant without, significantly, altering the structure of the Ga2S3. The broad range of the band gap tunability and the increased absorbability nominate the Ga2S3 thin films for photovoltaic applications. In addition, the dielectric spectral analysis and modeling have shown that a wide variety in the plasmon resonant frequency could be established within the Ga2S3/In/Ga2S3 trilayers. The plasmon frequency engineering in the range of 0.56-2.08 GHz which is associated with drift mobility of 12.58-5.76 cm(2)/Vs and electron scattering time at femtosecond level are promising for the production of broad band high frequency microwave filters.