Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
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Doçent Doktor
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atef.qasrawi@atilim.edu.tr
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Department of Electrical & Electronics Engineering
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Former Staff
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Scholarly Output

226

Articles

222

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677/0

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0

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WoS Citation Count

1894

Scopus Citation Count

1915

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0

WoS Citations per Publication

8.38

Scopus Citations per Publication

8.47

Open Access Source

17

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0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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Author: Gasanly, N. M.End date: 2019

Scholarly Output Search Results

Now showing 1 - 10 of 48
  • Thumbnail Image
    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals
    (Taylor & Francis Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.
    The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8-7.7) x 10(10) cm(3). Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres.
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    Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Photoelectronic and Electrical Properties of Tl2ingas4< Layered Crystals
    (Pergamon-elsevier Science Ltd, 2007) Qasrawi, A. F.; Gasanly, N. M.
    Tl2InGaS4 layered crystals are studied through the dark electrical conductivity, space charge limited current and illumination- and temperature-dependent photoconductivity measurements in the temperature regions of 220-350 K, 300-400 K and 200-350 K, respectively. The space charge limited current measurements revealed the existence of a single discrete trapping level located at 0.44 eV. The dark electrical conductivity showed the existence of two energy levels of 0.32 eV and 0.60 eV being dominant above and below 300 K, respectively. The photoconductivity measurements reflected the existence of two other energy levels located at 0.28 eV and 0.19 eV at high and low temperatures, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature of 330 K. The illumination dependence of photoconductivity is found to exhibit supralinear recombination in all the studied temperature ranges. The change in recombination mechanism is attributed to exchange in the behavior of sensitizing and recombination centers. (C) 2006 Elsevier Ltd. All rights reserved.
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    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Properties of Tl4se3< Single Crystals and Characterization of Ag/Tl4< Schottky Barrier Diodes
    (Elsevier Science Bv, 2010) Qasrawi, A. F.; Gasanly, N. M.
    The main physical properties of Tl4Se3S single crystals were investigated for the first time. Particularly, the crystal data, Debye temperature, dark electrical resistivity and Hall effect in addition to the temperature dependent current-voltage characteristics and photosensitivity of the Ag/Tl4Se3S Schottky barrier diode were studied. The X-ray diffraction patterns have revealed that the crystal exhibited a single phase of tetragonal structure belonging to the D-4h(18) - 14mcm space group. A Debye temperature of 100 K was calculated using the results of the X-ray diffraction analysis. The dark electrical resistivity and Hall-effect measurements indicated that the samples exhibits p-type conduction with an electrical resistivity, carrier concentration and Hall mobility of 6.20 x 10(3) Omega cm, 1.16 x 10(12) cm(-3) and 873 cm(2) V-1 s(-1), respectively. The crystals were observed to have Schottky diode properties. The Ag/Tl4Se3S Schottky barrier device bias voltage was observed to depend on the crystal direction and on temperature. It was found that the calculated energy barrier height decreased and the diode ideality factor increased with temperature decreasing. The photosensitivity-light intensity dependence of this device was found to be linear reflecting the ability of using it in optoelectronics. (C) 2009 Elsevier B.V. All rights reserved.
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    Article
    Citation - WoS: 9
    Citation - Scopus: 9
    Investigation of the Electrical Parameters of Ag/P-tlgases Schottky Contacts
    (Elsevier, 2012) Qasrawi, A. F.; Gasanly, N. M.
    p-type TlGaSeS single crystal was used to fabricate a Schottky device. Silver and carbon metals were used as the Ohmic and Schottky contacts, respectively. The device which displayed wide RF band at 13.200 and narrow band at 62.517 kHz with Q value of 1.4 and of 6.3 x 10(4), respectively, is characterized by means of current (I)-voltage (V), capacitance (C)-voltage characteristics as well as capacitance-frequency (f) characteristics. The device series resistance, ideality factor and barrier height are determined from the I-Vcurve as 35.8 M Omega, 1.2 and 0.74 eV, respectively. The apparent acceptor density and the build in voltage of the device increased with increasing ac signal frequency. The high Q value, observed at 62.517 kHz. indicated a much lower rate of energy loss relative to the stored energy of the device. The energy loss (Q(-1)) is much less than 0.001% of the stored value. The device was tested and found to remain at the same mode of resonance for several hours. It never switched or ceased unless it was tuned off. (c) 2012 Elsevier B.V. All rights reserved.
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    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Electron-Lattice Interaction Scattering Mobility in Tl2ingase4< Single Crystals
    (Iop Publishing Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.
    In this work, the dark electrical resistivity, charge carrier density and Hall mobility of Tl(2)InGaSe(4) single crystal have been recorded and analyzed to investigate the dominant scattering mechanism in the crystal. The data analyses have shown that this crystal exhibits an extrinsic n-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of two energy levels as 0.396 and 0.512 eV, being dominant above and below 260 K, respectively. The temperature dependence of the carrier density was analyzed by using the single-donor-single-acceptor model. The latter analysis has shown that the above maintained 0.512 eV energy level is a donor impurity level. The compensation ratio for this crystal is determined as 0.96. The Hall mobility of Tl(2)InGaSe(4) is found to be limited by the scattering of electron-acoustic phonon interactions. The calculated theoretical acoustic phonon scattering mobility agrees with the experimental one under the condition that the acoustic deformation potential is 12.5 eV.
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    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Optoelectronic Properties of Ga4se3< Single Crystals
    (Iop Publishing Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.; Ilaiwi, K. F.
    The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range of 2.01-2.35 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.08 eV at 300 K) that exhibits a temperature coefficient of -95 x 10(-4) eVK(-1).
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    Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Hall Mobility and Photoconductivity in Tlgases Crystals
    (Amer inst Physics, 2013) Qasrawi, A. F.; Gasanly, N. M.
    In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm(-2), respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775577]
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    Article
    Citation - WoS: 9
    Citation - Scopus: 9
    Energy Band Diagram and Current Transport Mechanism in P-mgo/N-ga4<
    (Ieee-inst Electrical Electronics Engineers inc, 2015) Qasrawi, Atef F.; Gasanly, N. M.
    A p-n heterojunction made of MgO and Ga4Se3S single crystal has been successfully produced. The current-voltage curve analysis has shown that the current conduction mechanism is mostly governed by the Richardson-Schottky mechanism. The width of the effective interface region of the p-n junction was found to be 3.72x10(-5)cm. The work function and the electron affinity of the Ga4Se3S crystals were also determined as 4.32 and 3.96 eV, respectively. On the other hand, the capacitance-voltage curve analysis, which was carried out in the power range that extends from Bluetooth to WLAN power outputs, reflected a built-in voltage of 0.48 eV and density of noncompensated carriers of 8.2 x 10(16)cm(-3). The device is observed to exhibit a wide range of negative resistance associated with the tunneling of charged particles at reverse biasing down to similar to 1.28 V. At that voltage, when exposed to a He-Ne laser beam of similar to 3 mW, the device reflected a responsivity of similar to 80. The charge storability increased and the I-V characteristics are significantly shifted. These properties are promising because it indicates the applicability of these tunneling devices in optoelectronics.
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    Article
    Hopping Conduction in Ga4se3< Layered Single Crystals
    (Pergamon-elsevier Science Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.
    The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were found to be 7.20 x 10(15) cm(-3) eV(-1) and 7.56 x 10(-6) cm, respectively. When the sample was illuminated, the Mott's VRH parameters are altered, particularly, the average hopping distance and the density of states near the Fermi level increase when light intensity increases. This action is attributed to the electron generation by photon absorption, which in turn leads to the Fermi level shift and/or trap density reduction by electron-hole recombination. (C) 2008 Elsevier Ltd. All rights reserved.
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    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Hole-Polar Phonon Interaction Scattering Mobility in Chain Structured Tlse0.75s0.25< Crystals
    (Wiley-blackwell, 2009) Qasrawi, A. F.; Gasanly, N. M.
    In this study, the electrical resistivity, charge carriers density and Hall mobility of chain structured TlSe0.75S0.25 crystal have been measured and analyzed to establish the dominant scattering mechanism in crystal. The data analyses have shown that this crystal exhibits an extrinsic p-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of three energy levels located at 280 meV, 68 meV and 48 meV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The carrier concentration data were best reproduced assuming the existence of an acceptor impurity level being located at 68 meV consistent with that observed from resistivity measurement, The model allowed the determination of the hole effective mass and the acceptor-donor concentration difference as 0.44m(0) and 2.2 x 10(12) cm(-3), respectively. The Hall mobility of the TlSe0.75S0.25 crystal is found to be limited by the scattering of charged carriers over the (chain) boundaries and the scattering of hole-polar phonon interactions above and below 300 K, respectively. The value of the energy barrier height at the chain boundaries was found to be 261 meV. The polar phonon scattering mobility revealed the high-frequency and static dielectric constants of 13.6 and 15.0, respectively. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim