Işık, Mehmet

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Now showing 1 - 3 of 3

Citation - WoS: 14
Citation - Scopus: 15
Structural and Optical Properties of Ga₂se_{3< Crystals by Spectroscopic Ellipsometry}
(Springer, 2019) Guler, I.; Isik, M.; Gasanly, N. M.; Gasanova, L. G.; Babayeva, R. F.
Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Citation - WoS: 8
Citation - Scopus: 8
Study of Vibrational Modes in (ga₂s_{3< - (ga₂se_{3< Mixed Crystals by Raman and Infrared Reflection Measurements}}
(Elsevier, 2019) Isik, M.; Guler, I.; Gasanly, N. M.
Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.
Citation - WoS: 3
Citation - Scopus: 3
Temperature and Excitation Intensity Tuned Photoluminescence in Ga_0.75in_{0.25< Crystals}
(Elsevier Science Bv, 2013) Isik, M.; Guler, I.; Gasanly, N. M.
Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.

Journal	Count
Optical Materials	17
Physica B: Condensed Matter	16
Journal of Luminescence	15
Materials Science in Semiconductor Processing	14
Journal of Materials Science: Materials in Electronics	12

Işık, Mehmet

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