Browsing by Author "Ziqan, Abdelhalim M."

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Citation - WoS: 3
Citation - Scopus: 3
Photon Assisted Hopping Conduction Mechanism in Tl₂sse Crystals
(Elsevier Science Bv, 2015) Qasrawi, A. F.; Ziqan, Abdelhalim M.; Jazzar, Suha Kh.; Gasanly, N. M.
In this article, the powder X-ray diffraction data and the dark and the photo-excited electrical conduction parameters of Tl2SSe crystal are reported. The dark and photon excited electrical conduction in the tetragonal crystal are found to be dominated by thermionic emission assisted variable range hopping conduction (VRH). The dark Molt's VRH parameters representing by the degree of disorder (T), the density of localized states near the Fermi level (N(E-F)), the average hopping range (R) and average hopping energy (W) exhibited wide tunability via incremental photon intensity. Particularly, while the dark values of T-0, W and R significantly decreased from 2.32x 10(8) to 1.52x10(5) K, 114 to 18.25 meV and from 66.15 to 10.58 A, respectively, the values of N(E-F) increased from 7.23 x 10(18) to 1.10 x 10(22) cm(-3)/eV when the crystal was photo-excited with a 53.6 mW/cm(2) light intensity. These variations in the hopping parameters via photon excitations are promisig for using the crystal in the fabrication of well controlled, widely tunable, low energy consuming and highly efficient electronic devices. (C) 2014 Elsevier B.V. All rights reserved
Citation - WoS: 13
Citation - Scopus: 13
Thermally Assisted Variable Range Hopping in Tl₄s_{3< Crystal}
(indian Acad Sciences, 2015) Ziqan, Abdelhalim M.; Qasrawi, A. F.; Mohammad, Abdulftah H.; Gasanly, N. M.
In this study, a modified model for the application of the thermionic and hopping current conduction mechanisms in the presence of continuous mixed conduction is investigated, discussed, experimented and simulated. It is observed that there exists a contribution from the hopping conductivity to the total conduction even at temperature ranges where the thermionic emission is mainly dominant. The contribution weight of a specific mechanism at particular temperature range is estimated. In addition, a modification to the Mott's variable range hopping (VRH) transport parameters like density of localized state near the Fermi level, the average hopping range and the hopping energy in the presence of mixed conduction mechanism is also reported. This new approach corrects the evaluated electrical parameters that are necessary for the construction of electronic devices like absorption layers in solar cells. This proposed model is also used to explain the conduction mechanism and investigate the electrical conduction thermionic and Mott's VRH parameters in Tl4S3Se crystals and in CuAlO2 thin films.