Browsing by Author "Tugay, Evrin"

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Citation - WoS: 7
Citation - Scopus: 7
Optical Properties of Gas Crystals: Combined Study of Temperature-Dependent Band Gap Energy and Oscillator Parameters
(Natl inst Science Communication-niscair, 2017) Isik, Mehmet; Tugay, Evrin; Gasanly, Nizami; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
Optical parameters of gallium sulfide (GaS) layered single crystals have been found through temperature-dependent transmission and room temperature reflection experiments in the wavelength range of 400-1100 nm. Experimental data demonstrates the coexistence of both optical indirect and direct transitions and the shift of the absorption edges toward lower energies by increasing temperature in the range of 10-300 K. Band gap at zero temperature, average phonon energy and electron phonon coupling parameter for indirect and direct band gap energies have been obtained from the analyses of temperature dependences of band gap energies. At high temperatures kT>> (E-ph), rates of band gap energy change have been found as 0.56 and 0.67 me V/K for E-gi and E-gd, respectively. Furthermore, the dispersion of refractive index has been discussed in terms of the Wemple-DiDomenico single effective oscillator model. The refractive index dispersion parameters, namely oscillator and dispersion energies, oscillator strength and zero-frequency refractive index, have been found to be 4.48 eV, 24.8 eV, 6.99x10(13) m(-2) and 2.56, respectively. The results of the present work will provide an important contribution to the research areas related to the characterization and optoelectronic device fabrication using GaS layered crystals.
Citation - WoS: 2
Citation - Scopus: 2
Temperature-Tuned Band Gap Energy and Oscillator Parameters of Gas_0.5se_{0.5< Single Crystals}
(Elsevier Gmbh, Urban & Fischer verlag, 2016) Isik, Mehmet; Tugay, Evrin; Gasanly, Nizami; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
Temperature-dependent transmission and room temperature reflection measurements were carried out on GaS0.5Se0.5 single crystal in the wavelength range of 380-1000 nm to investigate its optical parameters. The analysis of the temperature-dependent absorption data showed that direct and indirect band gap energies increase from 2.36 to 2.50 eV and 2.27 to 2.40 eV, respectively, as temperature is decreased from 300 to 10 K. The rates of change of the direct and indirect band gap energies with temperature was found around -7.4 x 10(-4) eV/K from the analysis of experimental data under the light of theoretical relation giving the band gap energy as a function of temperature. The absolute zero value of the band gap energies were also found from the same analysis as 2.50 eV (for direct) and 2.40 eV (for indirect). Wemple-DiDomenico single effective oscillator model, Sellmeier oscillator model and Spitzer-Fan model were used for the room temperature reflection data to find optical parameters of the crystal. (C) 2016 Elsevier GmbH. All rights reserved.