Browsing by Author "Gasanly,N.M."
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Article Citation Count: 12Carrier transport properties of InS single crystals(2002) Qasrawı, Atef Fayez Hasan; Gasanly,N.M.; Department of Electrical & Electronics EngineeringThe electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Citation Count: 12Carrier transport properties of InS single crystals(2002) Qasrawı, Atef Fayez Hasan; Gasanly,N.M.; Department of Electrical & Electronics EngineeringThe electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Citation Count: 3Evaluation of mechanical properties of Bi12SiO20 sillenite using first principles and nanoindentation(Taylor and Francis Ltd., 2021) Işık, Mehmet; Surucu,G.; Gencer,A.; Gasanly,N.M.; Department of Electrical & Electronics EngineeringThe mechanical and anisotropic elastic properties of Bi12SiO20 (BSO) were investigated using density functional theory (DFT) calculations and nanoindentation. The calculated and experimentally observed XRD patterns of the compound were reported and the crystal structure of the BSO was determined to be cubic with the lattice constant of a = 1.025 nm. The second-order elastic constants and related polycrystalline elastic moduli (e.g. shear modulus, Young’s modulus, Poisson’s ratio, linear compressibility and hardness) were calculated. The calculated elastic constants indicated that BSO is mechanically stable and exhibits anisotropic characteristics. Moreover, the directional dependencies of sound wave velocities were investigated in three dimensions. Pressure-dependent bulk modulus was plotted at temperatures between 0 and 800 K. Hardness and Young’s modulus were also determined by performing nanoindentation experiments on (222) and (631) planes of the BSO single crystal. The analyses of the experimental nanoindentation data resulted in hardness and Young’s modulus values of 7.2 and 97.0 GPa, respectively. The results of DFT and nanoindentation were discussed throughout the paper. The results of the present paper would provide valuable information on the mechanical behaviours of the BSO for the optoelectronic device applications. © 2021 Informa UK Limited, trading as Taylor & Francis Group.Article Citation Count: 0Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy(Elsevier B.V., 2024) Işık, Mehmet; Gasanly,N.M.; Department of Electrical & Electronics EngineeringIdentification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10–280 K to explore trap centers in InSe crystal—a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the Tstop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices. © 2024 Elsevier B.V.Article Citation Count: 0Unveiling the application potential of PbMo0.75W0.25O4 crystal: Linear and nonlinear optical properties through ellipsometry(Elsevier B.V., 2024) Işık, Mehmet; Gasanly,N.M.; Department of Electrical & Electronics EngineeringPbMo0.75W0.25O4 compound is formed by replacing one quarter of the Mo atoms in the PbMoO4 with W atoms and has significant potential for optoelectronic applications. Optical properties of PbMo0.75W0.25O4 single crystal have been systematically investigated using ellipsometry measurements in the spectral range of 2.4–5.4 eV. The linear optical parameters, including refractive index, extinction coefficient, and absorption coefficient, were extracted from the obtained ellipsometry data. By analyzing spectral dependence of these parameters, band gap energy, critical point energy, and single effective oscillator parameters were determined. The refractive index spectrum was analyzed in the below band gap energy region by considering Cauchy and Sellmeier models. Additionally, nonlinear optical values were calculated, providing a comprehensive understanding of the optical properties of the PbMo0.75W0.25O4 single crystal. This study not only contributes to the fundamental understanding of the crystal's optical properties but also has potential implications for applications in optoelectronic devices and photovoltaics. © 2024 Elsevier B.V.