Browsing by Author "Emek, Mehriban"

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Citation - WoS: 5
Citation - Scopus: 4
Nickel Doping Effects on the Structural and Dielectric Properties of Ba(zn_{1/3< Perovskite Ceramics}
(Springer, 2021) Qasrawi, A. F.; Sahin, Ethem Ilhan; Emek, Mehriban; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
The effects of nickel doping into Ba(Zn1/3Nb2/3)O-3 (acronym: BZN) ceramics is structurally, morphologically and electrically investigated. The nickel substitution in sites of Zn which was carried out by the solid state reaction technique strongly enhanced the structural, morphological and electrical performances of the BZN. Specifically, while the lattice constant and crystallite sizes increased, the microstrain and the defect density decreased. The relative density of the BZN ceramics increased from 95.40% to 98.24% upon doping of Ni with content of x = 0.05. In addition, the Ni doping increased the values of electrical conductivity without significant changes in the dielectric constant values. It is also observed that the doping the BZN ceramics highly altered the temperature dependent variation of the relative dielectric constant. In the temperature range of 293-473 K, the x = 0.05 Ni doped BZN samples were less sensitive to temperature. The dynamics of the temperature dependent dielectric response is dominated by the coupled defects excitation mechanisms. Both of the temperatures and frequency dependent dielectric constant, dielectric loss and electrical conductivity suggests that the Ni doped Ba(Zn1/3Nb2/3)O-3 ceramics is more appropriate for electronic device fabrication than the pure ones.
Citation - WoS: 5
Citation - Scopus: 5
Structural and Dielectric Performance of the Ba(zn_{1/3< Perovskite Ceramics}
(Iop Publishing Ltd, 2019) Qasrawi, A. F.; Sahin, Ethem Ilhan; Emek, Mehriban; Kartal, Mesut; Kargin, Serdar; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
In this work, we have explored the antimony doping effects on the structural and dielectric properties of Ba(Zn1/3Nb2/3)O-3 ceramics (BZN). The ceramics displayed perovskite structures with a lattice constant that decreases with increasing Sb content. The antimony solubility limit of the BZN ceramics is x < 0.50. Belowthis limit and in the range of 0.30 <= x <= 0.40, the microstrain, the dislocation density and the stacking faults decreased and the crystallite size increases with increasing Sb content in the composition of BZN. When the limit is exceeded minor phases are predicted by software analysis and confirmed by the experimental techniques. The presence of these phases is also verified by the scanning electron microscopy and energy dispersive x-ray spectroscopy techniques. Increasing the Sb content is observed to decrease the value of the dielectric constant. The Sb doped BZN ceramics exhibits high dielectric quality factors that nominate it for applications in electronics as radio waves resonators.
Citation - WoS: 7
Citation - Scopus: 7
Structural and Dielectric Properties of Ba_{1-x< Solid Solutions}
(Wiley-v C H verlag Gmbh, 2021) Qasrawi, A. F.; Sahin, Ethem Ilhan; Abed, Tamara Y.; Emek, Mehriban; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
Herein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1-xLax(Zn1/3Nb2/3)O-3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02-0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La-doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 degrees C. In the temperature range of 20-120 degrees C, La doping changes the temperature coefficient of dielectric constants from +30 ppm degrees C-1 in pure samples to -341 ppm degrees C-1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.