Tunable Au/Ga<sub>2< Varactor Diodes Designed for High Frequency Applications

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dc.authoridQasrawi, A. F./0000-0001-8193-6975
dc.authorscopusid36909456400
dc.authorscopusid6603962677
dc.authorwosidQasrawi, Atef/R-4409-2019
dc.contributor.authorAl Garni, S. E.
dc.contributor.authorQasrawi, A. F.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-10-06T10:58:23Z
dc.date.available2024-10-06T10:58:23Z
dc.date.issued2017
dc.departmentAtılım Universityen_US
dc.department-temp[Al Garni, S. E.] King Abdulaziz Univ, Phys Dept, Fac Sci Al Faisaliah, Jeddah, Saudi Arabia; [Qasrawi, A. F.] AAUP, Dept Phys, Jenin, Turkey; [Qasrawi, A. F.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkeyen_US
dc.descriptionQasrawi, A. F./0000-0001-8193-6975en_US
dc.description.abstractIn this work, the design and characterization of Au/Ga2S3/Yb Schottky barrier is investigated by means of transmittance electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDXS), capacitance spectroscopy, capacitance (C)-voltage (V) characteristics and impedance spectroscopy techniques. The design of the energy band diagram of the amorphous Au/Ga2S3 interface revealed a theoretical energy barrier height (q phi(b)) and built in voltage (qV(bi)) of 2.04 and 1.88 eV, respectively. Experimentally, the qV(bi) was observed to be sensitive to the applied signal frequency. In addition, the capacitance spectra which were studied in the range of 10-1800 MHz, revealed resonance and antiresonance biasing dependent signal oscillations associated with negative capacitance values. On the other hand, impedance spectroscopy analysis revealed band pass/reject filtering properties in all the studied frequency range. The device exhibited a return loss, voltage standing wave ratio and power efficiency of 16.7 dB, 1.3 and 98.3% at 1400 MHz, respectively.en_US
dc.description.sponsorshipDeanship of Scientific Research (DSR) at King Abdulaziz University, Jeddah; DSRen_US
dc.description.sponsorshipThis article was funded by the Deanship of Scientific Research (DSR) at King Abdulaziz University, Jeddah. The authors, therefore, acknowledge with thanks DSR for technical and financial support.en_US
dc.description.woscitationindexScience Citation Index Expanded
dc.identifier.citationcount10
dc.identifier.endpage388en_US
dc.identifier.issn1584-8663
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-85030213052
dc.identifier.scopusqualityQ3
dc.identifier.startpage381en_US
dc.identifier.urihttps://hdl.handle.net/20.500.14411/8899
dc.identifier.volume14en_US
dc.identifier.wosWOS:000412799700003
dc.identifier.wosqualityQ4
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherNatl inst R&d Materials Physicsen_US
dc.relation.ispartofChalcogenide Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount9
dc.subjectThin filmsen_US
dc.subjectVapor depositionen_US
dc.subjectElectron microscopyen_US
dc.subjectX-ray diffractionen_US
dc.subjectDielectricsen_US
dc.subjectElectrical propertiesen_US
dc.titleTunable Au/Ga<sub>2< Varactor Diodes Designed for High Frequency Applicationsen_US
dc.typeArticleen_US
dc.wos.citedbyCount10
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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