Spectral Dynamics of the <i>n</i>-InSe/<i>p</i>-BN Heterojunction

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Date

2015

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Springer

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The design and characterization of the InSe/BN heterojunction were investigated by study of optical reflectance, transmittance, and absorbance spectra in the incident wavelength range 300-1100 nm. Three absorption band edges related to conduction-valence band splitting of 2.75, 1.49, and 3.90 eV were observed. These bands shifted to 1.06 eV, 2.25 eV, and 3.85 eV on preparation of the InSe/BN interface. Analysis of dielectric spectra in the frequency range 275-1000 THz revealed the presence of three main resonance peaks at 333, 308, and 280 THz for the InSe substrate and at 341, 316, and 286 THz for the InSe/BN interface. The dispersion energy of the substrate increased from 27.43 eV to 33.77 eV on preparation of the InSe/BN interface. The quality factor of the heterojunction was found to be three times greater than that of InSe. The device seems to have potential, because the results suggest use of the heterojunction in thin-film transistor and optical communication technology.

Description

Qasrawi, Atef Fayez/0000-0001-8193-6975

Keywords

p-n junction, terahertz, optical, high absorption

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Citation

8

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Q3

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Volume

44

Issue

8

Start Page

2686

End Page

2692

URI

https://doi.org/10.1007/s11664-015-3738-0
 https://hdl.handle.net/20.500.14411/867

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