Structural, Morphological and Temperature-Tuned Bandgap Characteristics of Cus Nano-Flake Thin Films

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorscopusid 23766993100
dc.authorscopusid 57193666915
dc.authorscopusid 35580905900
dc.authorscopusid 7003589218
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.contributor.author Isik, Mehmet
dc.contributor.author Terlemezoglu, Makbule
dc.contributor.author Gasanly, Nizami
dc.contributor.author Parlak, Mehmet
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:24:52Z
dc.date.available 2024-07-05T15:24:52Z
dc.date.issued 2022
dc.department Atılım University en_US
dc.department-temp [Isik, Mehmet] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Terlemezoglu, Makbule; Parlak, Mehmet] Tekirdag Namik Kemal Univ, Dept Phys, TR-59030 Tekirdag, Turkey; [Terlemezoglu, Makbule] Middle East Tech Univ, Ctr Solar Res & Applicat, TR-06800 Ankara, Turkey; [Gasanly, Nizami; Parlak, Mehmet] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract Copper sulfide (CuS) thin films were produced by radio-frequency (RF) magnetron sputtering method. Structural, morphological and optical characteristics of deposited CuS films were presented. X-ray diffraction pattern showed two intensive peaks associated with hexagonal crystalline structure. Scanning electron microscopy image indicated that CuS films have nano-flake structured. Raman spectrum was reported to show vibrational characteristics of the CuS nano-flake thin films. Two peaks associated with Cu-S and S-S vibrations were observed in the Raman spectrum. Transmission spectra were recorded at various temperatures between 10 and 300 K. The analyses accomplished considering Tauc expression demonstrated that direct bandgap energy decreases from 2.36 eV (at 10 K) to 2.22 eV (at 300 K). Temperature-bandgap dependency was analyzed considering Varshni and Bose-Einstein expressions to reveal bandgap at 0 K, rate of change of bandgap and Debye temperature. CuS nanoflake thin film may be used in optoelectronic and photocatalysis applications thanks to its direct and narrow bandgap energy characteristics. en_US
dc.identifier.citationcount 13
dc.identifier.doi 10.1016/j.physe.2022.115407
dc.identifier.issn 1386-9477
dc.identifier.issn 1873-1759
dc.identifier.scopus 2-s2.0-85134212755
dc.identifier.scopusquality Q1
dc.identifier.uri https://doi.org/10.1016/j.physe.2022.115407
dc.identifier.uri https://hdl.handle.net/20.500.14411/2458
dc.identifier.volume 144 en_US
dc.identifier.wos WOS:000910864700006
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 20
dc.subject Copper sulfide en_US
dc.subject Nanoflake en_US
dc.subject Optical properties en_US
dc.subject Optoelectronic applications en_US
dc.title Structural, Morphological and Temperature-Tuned Bandgap Characteristics of Cus Nano-Flake Thin Films en_US
dc.type Article en_US
dc.wos.citedbyCount 21
dspace.entity.type Publication
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