Structural, morphological and temperature-tuned bandgap characteristics of CuS nano-flake thin films

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.authorscopusid23766993100
dc.authorscopusid57193666915
dc.authorscopusid35580905900
dc.authorscopusid7003589218
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.contributor.authorIşık, Mehmet
dc.contributor.authorTerlemezoglu, Makbule
dc.contributor.authorGasanly, Nizami
dc.contributor.authorParlak, Mehmet
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:24:52Z
dc.date.available2024-07-05T15:24:52Z
dc.date.issued2022
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, Mehmet] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Terlemezoglu, Makbule; Parlak, Mehmet] Tekirdag Namik Kemal Univ, Dept Phys, TR-59030 Tekirdag, Turkey; [Terlemezoglu, Makbule] Middle East Tech Univ, Ctr Solar Res & Applicat, TR-06800 Ankara, Turkey; [Gasanly, Nizami; Parlak, Mehmet] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266en_US
dc.description.abstractCopper sulfide (CuS) thin films were produced by radio-frequency (RF) magnetron sputtering method. Structural, morphological and optical characteristics of deposited CuS films were presented. X-ray diffraction pattern showed two intensive peaks associated with hexagonal crystalline structure. Scanning electron microscopy image indicated that CuS films have nano-flake structured. Raman spectrum was reported to show vibrational characteristics of the CuS nano-flake thin films. Two peaks associated with Cu-S and S-S vibrations were observed in the Raman spectrum. Transmission spectra were recorded at various temperatures between 10 and 300 K. The analyses accomplished considering Tauc expression demonstrated that direct bandgap energy decreases from 2.36 eV (at 10 K) to 2.22 eV (at 300 K). Temperature-bandgap dependency was analyzed considering Varshni and Bose-Einstein expressions to reveal bandgap at 0 K, rate of change of bandgap and Debye temperature. CuS nanoflake thin film may be used in optoelectronic and photocatalysis applications thanks to its direct and narrow bandgap energy characteristics.en_US
dc.identifier.citation13
dc.identifier.doi10.1016/j.physe.2022.115407
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.scopus2-s2.0-85134212755
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.physe.2022.115407
dc.identifier.urihttps://hdl.handle.net/20.500.14411/2458
dc.identifier.volume144en_US
dc.identifier.wosWOS:000910864700006
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCopper sulfideen_US
dc.subjectNanoflakeen_US
dc.subjectOptical propertiesen_US
dc.subjectOptoelectronic applicationsen_US
dc.titleStructural, morphological and temperature-tuned bandgap characteristics of CuS nano-flake thin filmsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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