Structural and optical properties of the ZnS/GaSe heterojunctions
dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
dc.authorscopusid | 55735276400 | |
dc.authorscopusid | 57200990541 | |
dc.authorscopusid | 6603962677 | |
dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
dc.authorwosid | Alharbi, Seham/JFK-4290-2023 | |
dc.contributor.author | Qasrawı, Atef Fayez Hasan | |
dc.contributor.author | Abdallaha, Maisam M. A. | |
dc.contributor.author | Qasrawi, A. F. | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T15:30:04Z | |
dc.date.available | 2024-07-05T15:30:04Z | |
dc.date.issued | 2017 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Alharbi, S. R.] King Abdulaziz Univ, Phys Dept, Fac Sci Al Faisaliah, Jeddah, Saudi Arabia; [Abdallaha, Maisam M. A.; Qasrawi, A. F.] AAUJ, Dept Phys, Jenin, Palestine; [Qasrawi, A. F.] Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey | en_US |
dc.description | Qasrawi, Atef Fayez/0000-0001-8193-6975; | en_US |
dc.description.abstract | In the current work, the ZnS/GaSe thin film heterojunction interfaces are experimentally designed and characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersion spectroscopy and optical spectroscopy techniques. The heterojunction is observed to exhibit physical nature of formation with an induced crystallization of GaSe by the ZnS substrate. For this heterojunction, the hot probe technique suggested the formation of a p-ZnS/n-GaSe interface. In addition, the designed energy band diagram of the heterojunction which was actualized with the help of the optical spectrophotometric data analysis revealed a respective conduction and valence band offsets of 0.67 and 0.73 eV. On the other hand, the dielectric dispersion analysis and modeling which was studied in the frequency range of 270-1000 THz, have shown that the interfacing of the ZnS with GaSe strongly affects the properties of ZnS as it reduces the number of free carriers, shifts down the plasmon frequency, increases the charge carrier scattering time and results in higher values of drift mobility at Terahertz frequencies. | en_US |
dc.description.sponsorship | King Abdulaziz University, Jaddah [G-97-363-38]; DSR | en_US |
dc.description.sponsorship | This project was funded by the Deanship of Scientific Research (DSR) at King Abdulaziz University, Jaddah, under the grant number G-97-363-38. The authors, therefore, acknowledge with thanks the DSR technical and financial support. | en_US |
dc.identifier.citation | 2 | |
dc.identifier.doi | 10.1088/2053-1591/aa97a6 | |
dc.identifier.issn | 2053-1591 | |
dc.identifier.issue | 11 | en_US |
dc.identifier.scopus | 2-s2.0-85042782467 | |
dc.identifier.uri | https://doi.org/10.1088/2053-1591/aa97a6 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/2995 | |
dc.identifier.volume | 4 | en_US |
dc.identifier.wos | WOS:000415878900002 | |
dc.identifier.wosquality | Q3 | |
dc.language.iso | en | en_US |
dc.publisher | Iop Publishing Ltd | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | GaSe | en_US |
dc.subject | optical materials | en_US |
dc.subject | coating | en_US |
dc.subject | dielectric properties | en_US |
dc.subject | Drude-Lorentz | en_US |
dc.title | Structural and optical properties of the ZnS/GaSe heterojunctions | en_US |
dc.type | Article | en_US |
dspace.entity.type | Publication | |
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