Optical Constants of Layered Structured Ga<sub>0.75</Sub>in<sub>0.25< Crystals From the Ellipsometric Measurements

dc.authoridOzcelik, Suleyman/0000-0002-3761-3711
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.authorscopusid23766993100
dc.authorscopusid26642432800
dc.authorscopusid35580905900
dc.authorscopusid7004257790
dc.authorwosidOzcelik, Suleyman/J-6494-2014
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidCetin Aydin, Saime Sebnem/ABB-7443-2020
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.contributor.authorIsik, M.
dc.contributor.authorCetin, S. S.
dc.contributor.authorGasanly, N. M.
dc.contributor.authorOzcelik, S.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:11:03Z
dc.date.available2024-07-05T15:11:03Z
dc.date.issued2012
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Cetin, S. S.; Ozcelik, S.] Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkeyen_US
dc.descriptionOzcelik, Suleyman/0000-0002-3761-3711; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266en_US
dc.description.abstractWe have carried out the spectroscopic ellipsometry measurements on Ga0.75In0.25Se single crystals in the 1.2-6.0 eV spectral range at room temperature. The optical constants, real and imaginary parts of the dielectric function, refractive index and extinction coefficient, were found as a result of analysis of ellipsometric data. The critical point analysis of the second derivative spectra of the dielectric function revealed four interband transition structures with critical point energy values of 3.19, 3.53, 4.10 and 4.98 eV. The results of the analysis were compared with those of the ellipsometric studies performed on GaSe which is the main constituent of the Ga0.75In0.25Se crystal. The obtained critical point energies are in good agreement with the energies of the GaSe crystal reported in the literature. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.identifier.citationcount10
dc.identifier.doi10.1016/j.ssc.2012.01.043
dc.identifier.endpage793en_US
dc.identifier.issn0038-1098
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-84859806779
dc.identifier.startpage791en_US
dc.identifier.urihttps://doi.org/10.1016/j.ssc.2012.01.043
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1399
dc.identifier.volume152en_US
dc.identifier.wosWOS:000302978800011
dc.identifier.wosqualityQ3
dc.institutionauthorIşık, Mehmet
dc.language.isoenen_US
dc.publisherPergamon-elsevier Science Ltden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount11
dc.subjectSemiconductorsen_US
dc.subjectOptical constantsen_US
dc.subjectEllipsometryen_US
dc.titleOptical Constants of Layered Structured Ga<sub>0.75</Sub>in<sub>0.25< Crystals From the Ellipsometric Measurementsen_US
dc.typeArticleen_US
dc.wos.citedbyCount10
dspace.entity.typePublication
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