Properties of Se/InSe Thin-Film Interface

Abstract

Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr. The structural, optical, and electrical properties of the films and Se/InSe interface were investigated by means of x-ray diffraction (XRD) analysis, ultraviolet-visible spectroscopy, and current-voltage (I-V) characteristics. XRD analysis indicated that the prepared InSe films were amorphous while the Se films were polycrystalline having hexagonal structure with unit cell parameters of a = 4.3544 and c = 4.9494 . Spectral reflectance and transmittance analysis showed that both Se and InSe films exhibited indirect allowed transitions with energy bandgaps of 1.92 eV and 1.34 eV, respectively. The Se/InSe interface exhibited two energy bandgaps of 0.98 eV and 1.73 eV above and below 2.2 eV, respectively. Dielectric constant values were also calculated from reflectance spectra for the three layers in the frequency range of 500 THz to 272 THz. The dielectric constant exhibited a promising feature suggesting use of the Se/InSe interface as an optical resonator. Moreover, the Au/Se/InSe/Ag heterojunction showed some rectifying properties that could be used in standard optoelectronic devices. The ideality factor and height of the energy barrier to charge carrier motion in this device were found to be 1.72 and 0.66 eV, respectively.