Nanowire Geometry Effects on Devices and Transport Mechanisms: Sns<sub>2</Sub> Heterojunction

dc.authorid Emir, Cansu/0000-0003-4395-064X
dc.authorscopusid 16028137400
dc.authorscopusid 57204953639
dc.authorscopusid 57193666915
dc.authorscopusid 7003589218
dc.authorwosid Coskun, Emre/K-3786-2018
dc.contributor.author Coskun, Emre
dc.contributor.author Emir, Cansu
dc.contributor.author Terlemezoglu, Makbule
dc.contributor.author Parlak, Mehmet
dc.date.accessioned 2024-07-05T15:22:16Z
dc.date.available 2024-07-05T15:22:16Z
dc.date.issued 2023
dc.department Atılım University en_US
dc.department-temp [Coskun, Emre] Canakkale Onsekiz Mart Univ, Dept Phys, Canakkale, Turkiye; [Coskun, Emre] Middle East Tech Univ, Ctr Solar Energy Res & Applicat GUNAM, Ankara, Turkiye; [Emir, Cansu] Atilim Univ, Phys Grp, Ankara, Turkiye; [Terlemezoglu, Makbule] Gazi Univ, Dept Phys, Ankara, Turkiye; [Parlak, Mehmet] Middle East Tech Univ, Dept Phys, Ankara, Turkiye en_US
dc.description Emir, Cansu/0000-0003-4395-064X en_US
dc.description.abstract The semiconductor nanowire technology has become essential in developing more complex and efficient devices. In this study, the Si nanowire (SiNW) heterojunction structure with a two-dimensional SnS2 thin film was investigated. The SiNW array was created by the metal-assisted etching method because of length control and production over large areas of nanowires. The created SiNW has more diminishing reflectivity compared with Si planar substrate. The diode characteristics of SnS2/SiNW and SnS2/Si planar heterojunctions were investigated by dark current analysis at room temperature, and the improving diode characteristics by the three-dimensional interface between SiNW and SnS2 thin film were discussed. Transport mechanisms of the SiNW heterojunction were also studied for various methods. Thermionic emission and thermally assisted tunneling models are the dominant mechanisms for low voltages (0.02-0.20 V), and the space charge limiting current mechanism dominates the current for comparingly high voltages (0.20-0.40 V). All the values reveal the significant impact of the SiNW on heterojunctions for improving efficiency. en_US
dc.description.sponsorship This work was supported by the Turkish Scientific and Technological Research Council (TUBITAK MFAG no. 120F325). [120F325]; Turkish Scientific and Technological Research Council en_US
dc.description.sponsorship This work was supported by the Turkish Scientific and Technological Research Council (TUBITAK MFAG no. 120F325). en_US
dc.identifier.citationcount 0
dc.identifier.doi 10.1007/s10853-023-08891-9
dc.identifier.issn 0022-2461
dc.identifier.issn 1573-4803
dc.identifier.scopus 2-s2.0-85173483945
dc.identifier.uri https://doi.org/10.1007/s10853-023-08891-9
dc.identifier.uri https://hdl.handle.net/20.500.14411/2166
dc.identifier.wos WOS:001079737400004
dc.identifier.wosquality Q2
dc.language.iso en en_US
dc.publisher Springer en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 1
dc.subject [No Keyword Available] en_US
dc.title Nanowire Geometry Effects on Devices and Transport Mechanisms: Sns<sub>2</Sub> Heterojunction en_US
dc.type Article en_US
dc.wos.citedbyCount 0
dspace.entity.type Publication

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