Temperature dependent bandgap in NaBi(WO<sub>4</sub>)<sub>2</sub> single crystals

No Thumbnail Available

Date

2022

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier Gmbh

Research Projects

Organizational Units

Organizational Unit
Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

Journal Issue

Abstract

The double tungstates have been an attractive research interest due to their optoelectronic applications. In the present work, NaBi(WO4)(2), one of the members of double tungstates family, was grown by Czochralski method as single crystal form and optically investigated. X-ray diffraction pattern presented three peaks associated with tetragonal scheelite crystalline structure. Optical properties of the crystal were studied by performing temperature-dependent transmission measurements between 10 and 300 K. The shift of the absorption edge to higher energies was observed with decrease of temperature. The analyses indicated that direct band gap energy increases from 3.50 to 3.60 eV when the temperature was decreased from room temperature to 10 K. The temperature dependency of bandgap was studied considering the Varshni model and fitting of the experimental data under the light of model presented the optical parameters of band gap energy at 0 K, rate of band gap change with temperature and Debye temperature as E-g(0) = 3.61 eV, gamma = 8.83 x 10(-4) eV/K and beta = 456 K, respectively. Urbach energies were also determined from the analyses as 122 and 113 meV for 10 and 300 K experimental data, respectively.

Description

Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266

Keywords

Double tungstates, NaBi(WO4)(2), NaBi(MoO4)(2), Optical properties, Electronic structure

Turkish CoHE Thesis Center URL

Citation

5

WoS Q

Q2

Scopus Q

Source

Volume

258

Issue

Start Page

End Page

Collections