Structural, Optical and Electrical Properties of Ybinse Thin Films

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid 55735276400
dc.authorscopusid 6603962677
dc.authorwosid Alharbi, Seham/JFK-4290-2023
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.contributor.author Alharbi, S. R.
dc.contributor.author Qasrawi, A. F.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:31:21Z
dc.date.available 2024-07-05T14:31:21Z
dc.date.issued 2016
dc.department Atılım University en_US
dc.department-temp [Alharbi, S. R.] King Abdulaziz Univ, Fac Sci Al Faisaliah, Dept Phys, Jeddah, Saudi Arabia; [Qasrawi, A. F.] Atilim Univ, AAUJ, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975 en_US
dc.description.abstract In this work, the compositional, the structural, the vibrational, the optical and the electrical characterizations of the YbInSe compound are investigated by means of energy dispersion X-ray analysis, scanning electron microscopy and X-ray diffraction, Raman spectroscopy, ultraviolet-visible light spectrophotometry, impedance spectroscopy and temperature dependent electrical conductivity, respectively. The 300 nm thick YbInSe films which were prepared by the co-evaporation of the source materials under a vacuum pressure of 10(-5) mbar, are observed to exhibit nanocrystalline clusters of size of 27 nm regularly distributed among an amorphous structure. The most intensive Raman active lines are observed at 150 and 254 cm(-1). In addition, the optical analysis has shown that the films exhibit a direct forbidden electronic transitions type energy band gap of 1.07 eV. The optical transitions are associated with interband tail states of width of 0.28 eV. Moreover, the real and imaginary parts of dielectric spectra which were analyzed in the frequency range of 270-1000 THz, were analyzed in accordance with the single oscillator and the Lorentz models, respectively. The modeling allowed determining the oscillator and dispersion energies, the terahertz free carrier scattering time, the free holes effective mass, the carrier density, the drift mobility and the reduced resonant frequency for the YbinSe films. In the electronic part of study, the temperature dependent dc electrical conductivity analysis, indicated the domination of the variable range hopping transport mechanism below 335 K, the thermal excitation of charge carriers in the range of 337390 K and the extrinsic-intrinsic transition property at 390 K. The ac conductivity spectra which were recorded in the frequency range of 10-1500 MHz, revealed the domination of the correlated barrier hopping of free carriers between pairs of localized states at the Fermi level. (C) 2016 Elsevier B.V. All rights reserved. en_US
dc.description.sponsorship Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah [G-127-363-1436]; DSR en_US
dc.description.sponsorship This project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah, under the grant number G-127-363-1436. The authors, therefore, acknowledge with thanks the DSR technical and financial support. en_US
dc.identifier.citationcount 1
dc.identifier.doi 10.1016/j.tsf.2016.10.016
dc.identifier.endpage 814 en_US
dc.identifier.issn 0040-6090
dc.identifier.scopus 2-s2.0-84992047492
dc.identifier.startpage 808 en_US
dc.identifier.uri https://doi.org/10.1016/j.tsf.2016.10.016
dc.identifier.uri https://hdl.handle.net/20.500.14411/655
dc.identifier.volume 616 en_US
dc.identifier.wos WOS:000389388600114
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Elsevier Science Sa en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 1
dc.subject YbInSe en_US
dc.subject Optical materials en_US
dc.subject Coating en_US
dc.subject Dielectric properties en_US
dc.title Structural, Optical and Electrical Properties of Ybinse Thin Films en_US
dc.type Article en_US
dc.wos.citedbyCount 1
dspace.entity.type Publication
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