Trap Distribution in Tlins<sub>2</Sub> Layered Crystals From Thermally Stimulated Current Measurements

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorid goksen, kadir/0000-0001-8790-582X
dc.authorscopusid 23766993100
dc.authorscopusid 7801499255
dc.authorscopusid 35580905900
dc.authorscopusid 7103355997
dc.authorwosid goksen, kadir/KFQ-6322-2024
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Ozkan, HÜSNÜ/H-1235-2016
dc.contributor.author Isik, M.
dc.contributor.author Goksen, K.
dc.contributor.author Gasanly, N. M.
dc.contributor.author Ozkan, H.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:34:10Z
dc.date.available 2024-07-05T14:34:10Z
dc.date.issued 2008
dc.department Atılım University en_US
dc.department-temp [Goksen, K.; Gasanly, N. M.; Ozkan, H.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey; [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Goksen, K.] Yuzuncu Yil Univ, Dept Phys, TR-65080 Van, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266; goksen, kadir/0000-0001-8790-582X en_US
dc.description.abstract We have carried out thermally stimulated current (TSC) measurements with the current flowing along the layer on as-grown TlInS2 layered single crystals in the low temperature range 10 - 110 K with different heating rates of 0.1 - 1.5 K/s. Experimental evidence was found for the presence of two shallow electron trapping centers with activation energies of 12 and 14 meV. Their capture cross sections have been determined as 2.2 x 10(-23) and 7.1 x 10(-25) cm(2), respectively. It was concluded that retrapping in these centers is negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumed slow retrapping. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light excitation temperatures. This experimental technique provided a value of 27 meV/decade for the trap distribution. The parameters of the monoclinic unit cell were determined by studying the X-ray powder diffraction. en_US
dc.identifier.citationcount 17
dc.identifier.doi 10.3938/jkps.52.367
dc.identifier.endpage 373 en_US
dc.identifier.issn 0374-4884
dc.identifier.issn 1976-8524
dc.identifier.issue 2 en_US
dc.identifier.scopus 2-s2.0-40049091437
dc.identifier.startpage 367 en_US
dc.identifier.uri https://doi.org/10.3938/jkps.52.367
dc.identifier.uri https://hdl.handle.net/20.500.14411/1028
dc.identifier.volume 52 en_US
dc.identifier.wos WOS:000253259400032
dc.identifier.wosquality Q4
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Korean Physical Soc en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 17
dc.subject semiconductors en_US
dc.subject chalcogenides en_US
dc.subject electrical properties en_US
dc.subject defects en_US
dc.title Trap Distribution in Tlins<sub>2</Sub> Layered Crystals From Thermally Stimulated Current Measurements en_US
dc.type Article en_US
dc.wos.citedbyCount 17
dspace.entity.type Publication
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