Optical Conduction in Amorphous Gase Thin Films
dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
dc.authorid | Khanfar, Hazem k./0000-0002-3015-4049 | |
dc.authorscopusid | 6603962677 | |
dc.authorscopusid | 35778075300 | |
dc.authorscopusid | 56766039000 | |
dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
dc.authorwosid | Khanfar, Hazem k./AAK-7885-2020 | |
dc.contributor.author | Qasrawi, A. F. | |
dc.contributor.author | Khanfar, Hazem. K. | |
dc.contributor.author | Kmail, Renal R. N. | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T14:29:40Z | |
dc.date.available | 2024-07-05T14:29:40Z | |
dc.date.issued | 2016 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Qasrawi, A. F.; Kmail, Renal R. N.] Arab Amer Univ, Dept Phys, Jenin, Palestine; [Qasrawi, A. F.; Kmail, Renal R. N.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Khanfar, Hazem. K.; Kmail, Renal R. N.] Arab Amer Univ, Dept Telecommun Engn, Jenin, Palestine | en_US |
dc.description | Qasrawi, Atef Fayez/0000-0001-8193-6975; Khanfar, Hazem k./0000-0002-3015-4049 | en_US |
dc.description.abstract | In this work, the optical conduction mechanism in GaSe thin films was explored by means of dielectric spectral analysis in the 270-1000 THz range of frequency. The GaSe films which are found to be amorphous in nature are observed to follow the Lorentz approach for optical conduction. The modeling of the optical conductivity which takes into account the damped electronic motion resulting from the collision of photogenerated carriers with impurities, phonons and other damping sources allowed determining the optical conduction parameters. Particularly, an average carrier scattering time, a free carrier density, a reduced resonant frequency, a field effect mobility and an electron bounded plasma frequency of 0.142 (fs), 1.7 x 10(19) (cm(-3)), 875.8 (THz), 1.25 (cm(2)/Vs) and 82.8 (THz), respectively, were determined. These parameters are promising as they indicate the applicability of GaSe in the technology of mid-infrared plasmonic nanoantennas. In addition, the dielectric optical signal which displayed a resonance peak at 500 THz seems to be attractive for use in passive modes operating optoelectronic devices like field effect transistors as they exhibit an increasing signal quality factor with decreasing incident light frequency (C) 2016 Elsevier GmbH. All rights reserved. | en_US |
dc.description.sponsorship | scientific research council of The Arab American University-Jenin (AAUJ), Palestine; AAUJ [2014-2015 Cycle II] | en_US |
dc.description.sponsorship | The authors would like to thank the scientific research council of The Arab American University-Jenin (AAUJ), Palestine, for the financial support. The work was supported by the AAUJ under the project code (2014-2015 Cycle II). | en_US |
dc.identifier.citationcount | 12 | |
dc.identifier.doi | 10.1016/j.ijleo.2016.03.021 | |
dc.identifier.endpage | 5195 | en_US |
dc.identifier.issn | 0030-4026 | |
dc.identifier.issue | 13 | en_US |
dc.identifier.scopus | 2-s2.0-84961820306 | |
dc.identifier.startpage | 5193 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.ijleo.2016.03.021 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/544 | |
dc.identifier.volume | 127 | en_US |
dc.identifier.wos | WOS:000376810000005 | |
dc.identifier.wosquality | Q2 | |
dc.institutionauthor | Qasrawı, Atef Fayez Hasan | |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Gmbh | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.scopus.citedbyCount | 10 | |
dc.subject | Thin film | en_US |
dc.subject | Optical conductivity | en_US |
dc.subject | GaSe | en_US |
dc.subject | Plasma frequency | en_US |
dc.title | Optical Conduction in Amorphous Gase Thin Films | en_US |
dc.type | Article | en_US |
dc.wos.citedbyCount | 11 | |
dspace.entity.type | Publication | |
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