Temperature-Dependent Optical Characteristics of Sputtered Ga-Doped Zno Thin Films

dc.authorscopusid36766075800
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.authorscopusid7003589218
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.authorwosidGULLU, HASAN HUSEYIN/F-7486-2019
dc.contributor.authorGullu, H. H.
dc.contributor.authorIsik, M.
dc.contributor.authorGasanly, N. M.
dc.contributor.authorParlak, M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:19:06Z
dc.date.available2024-07-05T15:19:06Z
dc.date.issued2021
dc.departmentAtılım Universityen_US
dc.department-temp[Gullu, H. H.; Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.; Parlak, M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan; [Parlak, M.] Middle East Tech Univ, Ctr Solar Energy Res & Applicat GUNAM, TR-06800 Ankara, Turkeyen_US
dc.description.abstractThe present paper reports structural and optical properties of gallium (Ga) doped ZnO thin films (GZO) grown by magnetron sputtering technique. The crystalline properties were determined from X-ray diffraction measurements and analyses pointed out the crystalline structure as hexagonal, crystalline size as 43 nm and strain as 6.9 x 10(-5). Derivative spectroscopy analyses showed that band gap energy of GZO thin films decreases from 3.50 eV (10 K) to 3.45 eV (300 K). Temperature-band gap energy dependency was analyzed using Varshni and O'DonnellChen models. The absolute zero band gap energy, the rate of change of band gap energy with temperature and phonon energy were found as 3.50 eV, -2.8 x 10(-4) eV/K and 15 meV, respectively. The room temperature band gap and Urbach energies were also determined as 3.43 eV and 102 meV, respectively, from the absorption analysis.en_US
dc.identifier.citationcount13
dc.identifier.doi10.1016/j.mseb.2020.114834
dc.identifier.issn0921-5107
dc.identifier.issn1873-4944
dc.identifier.scopus2-s2.0-85092001429
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2020.114834
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1939
dc.identifier.volume263en_US
dc.identifier.wosWOS:000614003000002
dc.identifier.wosqualityQ2
dc.institutionauthorIşık, Mehmet
dc.institutionauthorGüllü, Hasan Hüseyin
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount14
dc.subjectGa-doped ZnOen_US
dc.subjectOptical propertiesen_US
dc.subjectSputteringen_US
dc.titleTemperature-Dependent Optical Characteristics of Sputtered Ga-Doped Zno Thin Filmsen_US
dc.typeArticleen_US
dc.wos.citedbyCount14
dspace.entity.typePublication
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