Tunable enhanced infrared absorption spectroscopy surfaces based on thin VO<sub>2</sub> films

No Thumbnail Available

Date

2018

Journal Title

Journal ISSN

Volume Title

Publisher

Optical Soc Amer

Research Projects

Organizational Units

Organizational Unit
Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

Journal Issue

Abstract

Infrared absorption spectroscopy takes advantage of the electric field enhancement to detect low amounts of materials such as monolayer biomolecules. While the plasmonic field enhancement is the popular approach, it has been demonstrated that the interference-based uniform field enhancement using a simple dielectric/metal structure exhibits higher sensitivity and larger spectral bandwidth for ultrathin materials. Here, we numerically demonstrate that the enhancement bandwidth of such interference coatings can be further increased by inserting a VO2 thin film between the dielectric and metal layers. The field enhancement spectrum blueshifts upon thermally-induced insulator-to-metal transition in the VO2 layer. The structure that maximizes the enhancement bandwidth is determined as 880-nm-thick CaF2 on 350-nm-thick VO2 on optically thick Al. The study is completed with the investigation of using a bottom metal layer as an internal heater to electrothermally induce the phase change. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Description

Bakan, Gokhan/0000-0001-8335-2439

Keywords

[No Keyword Available]

Turkish CoHE Thesis Center URL

Citation

7

WoS Q

Q2

Scopus Q

Q2

Source

Volume

8

Issue

8

Start Page

2190

End Page

2196

Collections