Defect Characterization of Ga<sub>4</Sub>se<sub>3< Layered Single Crystals by Thermoluminescence

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Delice, Serdar/0000-0001-5409-6528
dc.authorscopusid 23766993100
dc.authorscopusid 55751932500
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Delice, Serdar/AAF-2712-2019
dc.authorwosid Delice, Serdar/AAU-4793-2020
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.contributor.author Isik, M.
dc.contributor.author Delice, S.
dc.contributor.author Gasanly, N.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:29:28Z
dc.date.available 2024-07-05T14:29:28Z
dc.date.issued 2016
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Delice, S.; Gasanly, N.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Delice, Serdar/0000-0001-5409-6528; en_US
dc.description.abstract Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of 27 meV. Analysis of curve fitting method indicated that mixed order of kinetics dominates the trapping process. Heating rate dependence and distribution of the traps associated with the observed TL peak were also studied. The shift of peak maximum temperature from 74 to 113 K with increasing rate from 0.4 to 1.2 K/s was revealed. Distribution of traps was investigated using an experimental technique based on cleaning the centres giving emission at lower temperatures. Activation energies of the levels were observed to be increasing from 27 to 40 meV by rising the stopping temperature from 15 to 36 K. en_US
dc.identifier.citationcount 0
dc.identifier.doi 10.1007/s12043-015-1081-x
dc.identifier.endpage 900 en_US
dc.identifier.issn 0304-4289
dc.identifier.issn 0973-7111
dc.identifier.issue 4 en_US
dc.identifier.scopus 2-s2.0-84962496407
dc.identifier.startpage 893 en_US
dc.identifier.uri https://doi.org/10.1007/s12043-015-1081-x
dc.identifier.uri https://hdl.handle.net/20.500.14411/524
dc.identifier.volume 86 en_US
dc.identifier.wos WOS:000374681000016
dc.identifier.wosquality Q2
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher indian Acad Sciences en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 0
dc.subject Thermoluminescence en_US
dc.subject semiconductors en_US
dc.subject defects en_US
dc.title Defect Characterization of Ga<sub>4</Sub>se<sub>3< Layered Single Crystals by Thermoluminescence en_US
dc.type Article en_US
dc.wos.citedbyCount 0
dspace.entity.type Publication
relation.isAuthorOfPublication 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication.latestForDiscovery 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections