Revealing Defect Centers in Pbwo<sub>4</Sub> Single Crystals Using Thermally Stimulated Current Measurements

dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.authoridgasanly, nizami/0000-0002-3199-6686
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.contributor.authorIsik, M.
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:23:08Z
dc.date.available2024-07-05T15:23:08Z
dc.date.issued2024
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkiye; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkiye; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijanen_US
dc.descriptionIsik, Mehmet/0000-0003-2119-8266; gasanly, nizami/0000-0002-3199-6686en_US
dc.description.abstractThe trap centers have a significant impact on the electronic properties of lead tungstate (PbWO4), suggesting their crucial role in optoelectronic applications. In the present study, we investigated and revealed the presence of shallow trap centers in PbWO4 crystals through the utilization of the thermally stimulated current (TSC) method. TSC experiments were performed in the 10-280 K range by applying a constant heating rate. The TSC spectrum showed the presence of a total of four peaks, two of which were overlapped. As a result of analyzing the TSC spectrum using the curve fit method, the activation energies of revealed centers were found as 0.03, 0.11, 0.16, and 0.35 eV. The trapping centers were associated with hole centers according to the comparison of TSC peak intensities recorded by illuminating the opposite polarity contacts. Our findings not only contribute to the fundamental understanding of the charge transport mechanisms in PbWO4 crystals but also hold great promise for enhancing their optoelectronic device performance. The identification and characterization of these shallow trap centers provide valuable insights for optimizing the design and fabrication of future optoelectronic devices based on PbWO4.en_US
dc.identifier.citationcount0
dc.identifier.doi10.1063/5.0189036
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85186117606
dc.identifier.urihttps://doi.org/10.1063/5.0189036
dc.identifier.urihttps://hdl.handle.net/20.500.14411/2262
dc.identifier.volume135en_US
dc.identifier.wosWOS:001198411700008
dc.identifier.wosqualityQ2
dc.institutionauthorIşık, Mehmet
dc.language.isoenen_US
dc.publisherAip Publishingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.scopus.citedbyCount4
dc.subject[No Keyword Available]en_US
dc.titleRevealing Defect Centers in Pbwo<sub>4</Sub> Single Crystals Using Thermally Stimulated Current Measurementsen_US
dc.typeArticleen_US
dc.wos.citedbyCount4
dspace.entity.typePublication
relation.isAuthorOfPublication0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication.latestForDiscovery0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Revealing Defect Centers in PbWO4 Single Crystals Using Thermally Stimulated Current Measurements.pdf
Size:
699.03 KB
Format:
Adobe Portable Document Format

Collections