Revealing Defect Centers in Pbwo<sub>4</Sub> Single Crystals Using Thermally Stimulated Current Measurements

dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorid gasanly, nizami/0000-0002-3199-6686
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.contributor.author Isik, M.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:23:08Z
dc.date.available 2024-07-05T15:23:08Z
dc.date.issued 2024
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkiye; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkiye; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan en_US
dc.description Isik, Mehmet/0000-0003-2119-8266; gasanly, nizami/0000-0002-3199-6686 en_US
dc.description.abstract The trap centers have a significant impact on the electronic properties of lead tungstate (PbWO4), suggesting their crucial role in optoelectronic applications. In the present study, we investigated and revealed the presence of shallow trap centers in PbWO4 crystals through the utilization of the thermally stimulated current (TSC) method. TSC experiments were performed in the 10-280 K range by applying a constant heating rate. The TSC spectrum showed the presence of a total of four peaks, two of which were overlapped. As a result of analyzing the TSC spectrum using the curve fit method, the activation energies of revealed centers were found as 0.03, 0.11, 0.16, and 0.35 eV. The trapping centers were associated with hole centers according to the comparison of TSC peak intensities recorded by illuminating the opposite polarity contacts. Our findings not only contribute to the fundamental understanding of the charge transport mechanisms in PbWO4 crystals but also hold great promise for enhancing their optoelectronic device performance. The identification and characterization of these shallow trap centers provide valuable insights for optimizing the design and fabrication of future optoelectronic devices based on PbWO4. en_US
dc.identifier.citationcount 0
dc.identifier.doi 10.1063/5.0189036
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.issue 8 en_US
dc.identifier.scopus 2-s2.0-85186117606
dc.identifier.uri https://doi.org/10.1063/5.0189036
dc.identifier.uri https://hdl.handle.net/20.500.14411/2262
dc.identifier.volume 135 en_US
dc.identifier.wos WOS:001198411700008
dc.identifier.wosquality Q2
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Aip Publishing en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.scopus.citedbyCount 5
dc.subject [No Keyword Available] en_US
dc.title Revealing Defect Centers in Pbwo<sub>4</Sub> Single Crystals Using Thermally Stimulated Current Measurements en_US
dc.type Article en_US
dc.wos.citedbyCount 5
dspace.entity.type Publication
relation.isAuthorOfPublication 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication.latestForDiscovery 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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