Trapping Centers and Their Distribution in Tl<sub>2</Sub>ga<sub>2< Layered Single Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Isik, M.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:10:08Z
dc.date.available 2024-07-05T15:10:08Z
dc.date.issued 2009
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl2Ga2Se3S layered single crystals in the temperature range of 10-260K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. The capture cross section and the concentration of the traps have been also determined. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light illumination temperatures. This experimental technique provided values of 10 and 88 meV/decade for the traps distribution related to two different trapping centers. (C) 2009 Elsevier Ltd. All rights reserved. en_US
dc.identifier.citationcount 5
dc.identifier.doi 10.1016/j.jpcs.2009.05.021
dc.identifier.endpage 1053 en_US
dc.identifier.issn 0022-3697
dc.identifier.issn 1879-2553
dc.identifier.issue 6 en_US
dc.identifier.scopus 2-s2.0-67649381624
dc.identifier.startpage 1048 en_US
dc.identifier.uri https://doi.org/10.1016/j.jpcs.2009.05.021
dc.identifier.uri https://hdl.handle.net/20.500.14411/1266
dc.identifier.volume 70 en_US
dc.identifier.wos WOS:000268414200025
dc.identifier.wosquality Q2
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Pergamon-elsevier Science Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 7
dc.subject Semiconductors en_US
dc.subject Chalcogenides en_US
dc.subject Defects en_US
dc.subject Electrical properties en_US
dc.title Trapping Centers and Their Distribution in Tl<sub>2</Sub>ga<sub>2< Layered Single Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 7
dspace.entity.type Publication
relation.isAuthorOfPublication 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication.latestForDiscovery 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections