Current Transport Mechanism in Au-<i>p</I>-mgo-ni Schottky Device Designed for Microwave Sensing

dc.authorid Khanfar, Hazem/0000-0002-3015-4049
dc.authorid Qasrawi, A. F./0000-0001-8193-6975
dc.authorscopusid 6603962677
dc.authorscopusid 35778075300
dc.authorwosid Khanfar, Hazem/AAK-7885-2020
dc.authorwosid Qasrawi, Atef/R-4409-2019
dc.authorwosid Khanfar, Hazem/D-2892-2014
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Khanfar, H. K.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-10-06T11:12:22Z
dc.date.available 2024-10-06T11:12:22Z
dc.date.issued 2016
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, Palestine; [Khanfar, H. K.] Arab Amer Univ, Dept Telecommun Engn, Jenin, Palestine; [Qasrawi, A. F.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkey en_US
dc.description Khanfar, Hazem/0000-0002-3015-4049; Qasrawi, A. F./0000-0001-8193-6975 en_US
dc.description.abstract Au/MgO/Ni back to back Schottky tunnelling barriers are designed on the surface of an MgO thin layer and are electrically characterized. The current voltage curve analysis has shown that thermionic emission, field effect thermionic (FET) emission and space charge limited current are dominant transport mechanism in distinct biasing regions. It was shown that, while the device is reverse biased with voltages less than 0.31 V, it conducts by tunnelling (FED though an energy barrier of 0.88 eV with a depletion region width of 15.7 nm. As the voltage exceeds 0.46 V, the tunnelling energy barrier is lowered to 0.76 eV and the depletion region widens and arrives at the reach-through running mode. The device was tested in the microwave electromagnetic power range that extends from Bluetooth to WLAN radiation levels at oscillating frequencies of 0.5 and 2.9 GHz. In addition, a low power resonating signal that suits mobile data is superimposed in the device. It was observed that the Au/MgO/Au sensors exhibit a wide tunability range via voltage biasing or via frequency control. The signal quality factor is 3.53 x 10(3) at 2.9 GHz. These properties reflect applicability in microwave technology as wireless and connectorized microwave amplifiers, microwave resonators and mixers. en_US
dc.description.sponsorship scientific research council at the ministry of high education of the state of Palestine [2/1/2013]; Arab American University; AAUJ en_US
dc.description.sponsorship The authors would like to acknowledge and submit thanks to the scientific research council at the ministry of high education of the state of Palestine for their support through the project coded 2/1/2013. Thanks also go to scientific research committee members at the Arab American University for their financial support and encouragements. This research was partially funded by the AAUJ research deanship through the first cycle of 2013. en_US
dc.description.woscitationindex Science Citation Index Expanded
dc.identifier.citationcount 2
dc.identifier.endpage 644 en_US
dc.identifier.issn 1454-4164
dc.identifier.issn 1841-7132
dc.identifier.issue 7-8 en_US
dc.identifier.scopus 2-s2.0-84994482385
dc.identifier.scopusquality Q4
dc.identifier.startpage 639 en_US
dc.identifier.uri https://hdl.handle.net/20.500.14411/9141
dc.identifier.volume 18 en_US
dc.identifier.wos WOS:000383819800008
dc.identifier.wosquality Q4
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Natl inst Optoelectronics en_US
dc.relation.ispartof Journal of Optoelectronics and Advanced Materials en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 3
dc.subject Shottky en_US
dc.subject MgO en_US
dc.subject Sensors en_US
dc.subject Barrier height en_US
dc.subject Microwave en_US
dc.subject Mobile en_US
dc.title Current Transport Mechanism in Au-<i>p</I>-mgo-ni Schottky Device Designed for Microwave Sensing en_US
dc.type Article en_US
dc.wos.citedbyCount 3
dspace.entity.type Publication
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