Structural and Optical Properties of Thermally Evaporated Cu-Ga (cgs) Thin Films

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 36766075800
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid GULLU, HASAN HUSEYIN/F-7486-2019
dc.contributor.author Gullu, H. H.
dc.contributor.author Isik, M.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:27:26Z
dc.date.available 2024-07-05T15:27:26Z
dc.date.issued 2018
dc.department Atılım University en_US
dc.department-temp [Gullu, H. H.; Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; en_US
dc.description.abstract The structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films were investigated by Xray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM) and optical transmittance measurements. The effect of annealing temperature on the results of applied techniques was also studied in the present paper. EDS results revealed that each of the elements, Cu, Ga and S are presented in the films and Cu and Ga concentration increases whereas S concentration decreases within the films as annealing temperature is increased. XRD pattern exhibited four diffraction peaks which are well-matched with those of tetragonal CuGaS2 compound. AFM images were recorded to get knowledge about the surface morphology and roughness of deposited thin films. Transmittance measurements were applied in the wavelength region of 300-1000 nm. Analyses of the absorption coefficient derived from transmittance data resulted in presence of three distinct transition regions in each thin films with direct transition type. Crystal-field and spin-orbit splitting energies existing due to valence band splitting were also calculated using quasicubic model. en_US
dc.description.sponsorship Atilim University [ATU-BAD-1718-04] en_US
dc.description.sponsorship The authors would like to thank M. Parlak for his assistance and guidance in the experiments which were carried out in the Department of Physics and Center for Solar Energy Research and Applications (GUNAM) at Middle East Technical University. This work was financed by Atilim University under Grant No. ATU-BAD-1718-04. en_US
dc.identifier.citationcount 4
dc.identifier.doi 10.1016/j.physb.2018.08.015
dc.identifier.endpage 96 en_US
dc.identifier.issn 0921-4526
dc.identifier.issn 1873-2135
dc.identifier.scopus 2-s2.0-85051680855
dc.identifier.startpage 92 en_US
dc.identifier.uri https://doi.org/10.1016/j.physb.2018.08.015
dc.identifier.uri https://hdl.handle.net/20.500.14411/2649
dc.identifier.volume 547 en_US
dc.identifier.wos WOS:000443824000013
dc.institutionauthor Işık, Mehmet
dc.institutionauthor Güllü, Hasan Hüseyin
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 6
dc.subject Thin films en_US
dc.subject Ternary semiconductor en_US
dc.subject Optical properties en_US
dc.title Structural and Optical Properties of Thermally Evaporated Cu-Ga (cgs) Thin Films en_US
dc.type Article en_US
dc.wos.citedbyCount 3
dspace.entity.type Publication
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