Polarization Sensitive Reflection and Dielectric Spectra in Gase Thin Films

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2016

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Hindawi Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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The light polarization effects on the optical reflective and dielectric spectra of GaSe thin films are studied in the incident light wavelength range of 200-1100 nm. In this range of measurement, the angle of incidence (theta(i)) of light was varied between 30 degrees and 80 degrees. In addition, at theta(i) of 30 degrees the light polarizing angle (delta) was altered in the range of 0-90 degrees. Regardless of the value of lambda, for all theta(i) > 65 degrees, the total reflectance sharply decreased with increasing theta(i). In addition, when theta(i) is fixed at 30 and delta was varied, the amplitudes ratio of the polarized waves exhibits a resonance-antiresonance phenomenon at a wavelength that coincides with the film's thickness (800 nm). This behavior was assigned to the coupled interference between incident and reflected waves and to the strong absorption effects. Two main resonance peaks are observed as response to s-polarized and normal incident beam: one is at similar to 540 (556 nm) and the other at similar to 420 THz (714 nm). The dielectric constant of the GaSe films exhibits anisotropic characteristics that nominate it for use as multipurpose optoelectronic devices.

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Qasrawi, Atef Fayez/0000-0001-8193-6975; Khanfar, Hazem k./0000-0002-3015-4049

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2016

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