Plasmon-Electron Dynamics at the Au/Inse and Y/Inse Interfaces Designed as Dual Gigahertz-Terahertz Filters

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid 55735276400
dc.authorscopusid 6603962677
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Alharbi, Seham/JFK-4290-2023
dc.contributor.author Alharbi, S. R.
dc.contributor.author Qasrawi, A. F.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:30:47Z
dc.date.available 2024-07-05T14:30:47Z
dc.date.issued 2017
dc.department Atılım University en_US
dc.department-temp [Alharbi, S. R.] King Abdulaziz Univ, Fac Sci Al Faisaliah, Dept Phys, Jeddah, Saudi Arabia; [Qasrawi, A. F.] AAUJ Jenin, Grp Phys, Jenin, Turkey; [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975; en_US
dc.description.abstract In this work, the X-ray diffraction, the Scanning electron microscopy, the energy dispersive X-ray, the Raman, The UV-vis light and the impedance spectral techniques are employed to explore the structural, vibrational, optical and electrical properties of the Au/InSe and Y/InSe thin film interfaces. It was shown that with its amorphous nature of crystallization, the InSe thin films exhibited n-type conductivity due to the 3% excess selenium. For this form of InSe, the only active Raman spectral line is 121 (cm(-1)). In addition to the design of the energy band diagram, the analysis the dielectric spectra and the optical conductivities were possible in the frequency range of 270-1000 THz. The modeling of the optical conductivities of the Au, Y, Au/InSe and Y/InSe with the help of Lorentz approach for optical conduction, assured that the conduction is dominated by the resonant plasmon-electron interactions at the metals and metals/semiconductors interfaces. It also allowed tabulating the necessary parameters for possible applications in terahertz technology: These parameters are the electron effective masses, the free electron densities, the electron bounded plasmon frequencies, the electron scattering times, the reduced resonant frequencies and the drift mobilities. On the other hand, the impedance spectral analysis of the Y/InSe/Au interfaces in the frequency range of 0.01-1.80 GHz, revealed negative capacitance effect associated with band filter features that exhibit maximum transition line at 1.17 GHz. This value nominates the interface as a member of filter classes in the gigahertz technology. (C) 2017 Elsevier GmbH. All rights reserved. en_US
dc.description.sponsorship Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah [127-363-1436-G]; DSR en_US
dc.description.sponsorship This project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah, under the grant number 127-363-1436-G. The authors, therefore, acknowledge with thanks the DSR technical and financial support. en_US
dc.identifier.citationcount 7
dc.identifier.doi 10.1016/j.ijleo.2017.02.046
dc.identifier.endpage 530 en_US
dc.identifier.issn 0030-4026
dc.identifier.scopus 2-s2.0-85014059811
dc.identifier.startpage 524 en_US
dc.identifier.uri https://doi.org/10.1016/j.ijleo.2017.02.046
dc.identifier.uri https://hdl.handle.net/20.500.14411/613
dc.identifier.volume 136 en_US
dc.identifier.wos WOS:000403124300068
dc.identifier.wosquality Q2
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Elsevier Gmbh, Urban & Fischer verlag en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 7
dc.subject InSe en_US
dc.subject Optical materials en_US
dc.subject Coating en_US
dc.subject Dielectric properties en_US
dc.subject Impedance en_US
dc.title Plasmon-Electron Dynamics at the Au/Inse and Y/Inse Interfaces Designed as Dual Gigahertz-Terahertz Filters en_US
dc.type Article en_US
dc.wos.citedbyCount 7
dspace.entity.type Publication
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