Energy Band Diagram and Current Transport Mechanism in P-mgo/N-ga<sub>4<
dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorscopusid | 6603962677 | |
dc.authorscopusid | 35580905900 | |
dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
dc.contributor.author | Qasrawi, Atef F. | |
dc.contributor.author | Gasanly, N. M. | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T14:31:44Z | |
dc.date.available | 2024-07-05T14:31:44Z | |
dc.date.issued | 2015 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Qasrawi, Atef F.] Arab Amer Univ, Dept Phys, IL-240 Jenin, Israel; [Qasrawi, Atef F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey | en_US |
dc.description | Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686 | en_US |
dc.description.abstract | A p-n heterojunction made of MgO and Ga4Se3S single crystal has been successfully produced. The current-voltage curve analysis has shown that the current conduction mechanism is mostly governed by the Richardson-Schottky mechanism. The width of the effective interface region of the p-n junction was found to be 3.72x10(-5)cm. The work function and the electron affinity of the Ga4Se3S crystals were also determined as 4.32 and 3.96 eV, respectively. On the other hand, the capacitance-voltage curve analysis, which was carried out in the power range that extends from Bluetooth to WLAN power outputs, reflected a built-in voltage of 0.48 eV and density of noncompensated carriers of 8.2 x 10(16)cm(-3). The device is observed to exhibit a wide range of negative resistance associated with the tunneling of charged particles at reverse biasing down to similar to 1.28 V. At that voltage, when exposed to a He-Ne laser beam of similar to 3 mW, the device reflected a responsivity of similar to 80. The charge storability increased and the I-V characteristics are significantly shifted. These properties are promising because it indicates the applicability of these tunneling devices in optoelectronics. | en_US |
dc.description.sponsorship | Ministry of High Education within the Scientific Research Council through Arab-American University, Jenin, Palestine [2/1/2013] | en_US |
dc.description.sponsorship | This work was supported by the Ministry of High Education within the Scientific Research Council through Arab-American University, Jenin, Palestine, under Grant 2/1/2013. The review of this paper was arranged by Editor S. Bandyopadhyay. | en_US |
dc.identifier.citationcount | 7 | |
dc.identifier.doi | 10.1109/TED.2014.2365831 | |
dc.identifier.endpage | 106 | en_US |
dc.identifier.issn | 0018-9383 | |
dc.identifier.issn | 1557-9646 | |
dc.identifier.issue | 1 | en_US |
dc.identifier.scopus | 2-s2.0-84920149228 | |
dc.identifier.startpage | 102 | en_US |
dc.identifier.uri | https://doi.org/10.1109/TED.2014.2365831 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/728 | |
dc.identifier.volume | 62 | en_US |
dc.identifier.wos | WOS:000346979800015 | |
dc.identifier.wosquality | Q2 | |
dc.institutionauthor | Qasrawı, Atef Fayez Hasan | |
dc.language.iso | en | en_US |
dc.publisher | Ieee-inst Electrical Electronics Engineers inc | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.scopus.citedbyCount | 8 | |
dc.subject | Communication equipment testing | en_US |
dc.subject | current measurement | en_US |
dc.subject | semiconductor heterojunctions | en_US |
dc.title | Energy Band Diagram and Current Transport Mechanism in P-mgo/N-ga<sub>4< | en_US |
dc.type | Article | en_US |
dc.wos.citedbyCount | 8 | |
dspace.entity.type | Publication | |
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