Energy Band Diagram and Current Transport Mechanism in P-mgo/N-ga<sub>4<

dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorQasrawi, Atef F.
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:31:44Z
dc.date.available2024-07-05T14:31:44Z
dc.date.issued2015
dc.departmentAtılım Universityen_US
dc.department-temp[Qasrawi, Atef F.] Arab Amer Univ, Dept Phys, IL-240 Jenin, Israel; [Qasrawi, Atef F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkeyen_US
dc.descriptionQasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractA p-n heterojunction made of MgO and Ga4Se3S single crystal has been successfully produced. The current-voltage curve analysis has shown that the current conduction mechanism is mostly governed by the Richardson-Schottky mechanism. The width of the effective interface region of the p-n junction was found to be 3.72x10(-5)cm. The work function and the electron affinity of the Ga4Se3S crystals were also determined as 4.32 and 3.96 eV, respectively. On the other hand, the capacitance-voltage curve analysis, which was carried out in the power range that extends from Bluetooth to WLAN power outputs, reflected a built-in voltage of 0.48 eV and density of noncompensated carriers of 8.2 x 10(16)cm(-3). The device is observed to exhibit a wide range of negative resistance associated with the tunneling of charged particles at reverse biasing down to similar to 1.28 V. At that voltage, when exposed to a He-Ne laser beam of similar to 3 mW, the device reflected a responsivity of similar to 80. The charge storability increased and the I-V characteristics are significantly shifted. These properties are promising because it indicates the applicability of these tunneling devices in optoelectronics.en_US
dc.description.sponsorshipMinistry of High Education within the Scientific Research Council through Arab-American University, Jenin, Palestine [2/1/2013]en_US
dc.description.sponsorshipThis work was supported by the Ministry of High Education within the Scientific Research Council through Arab-American University, Jenin, Palestine, under Grant 2/1/2013. The review of this paper was arranged by Editor S. Bandyopadhyay.en_US
dc.identifier.citationcount7
dc.identifier.doi10.1109/TED.2014.2365831
dc.identifier.endpage106en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-84920149228
dc.identifier.startpage102en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2014.2365831
dc.identifier.urihttps://hdl.handle.net/20.500.14411/728
dc.identifier.volume62en_US
dc.identifier.wosWOS:000346979800015
dc.identifier.wosqualityQ2
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherIeee-inst Electrical Electronics Engineers incen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount8
dc.subjectCommunication equipment testingen_US
dc.subjectcurrent measurementen_US
dc.subjectsemiconductor heterojunctionsen_US
dc.titleEnergy Band Diagram and Current Transport Mechanism in P-mgo/N-ga<sub>4<en_US
dc.typeArticleen_US
dc.wos.citedbyCount8
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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