Photoconductivity Kinetics in Agin<sub>5</Sub>s<sub>8< Thin Films

dc.authorid Ercan, ismail/0000-0001-6490-3792
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Kayed, Tarek/0000-0003-3482-4166
dc.authorscopusid 6603962677
dc.authorscopusid 6602167805
dc.authorscopusid 55663960100
dc.authorwosid Ercan, ismail/H-8561-2017
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Kayed, Tarek/A-5842-2015
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Kayed, T. S.
dc.contributor.author Ercan, Ismail
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:16:13Z
dc.date.available 2024-07-05T15:16:13Z
dc.date.issued 2010
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.; Kayed, T. S.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkey; [Ercan, Ismail] Duzce Univ, Dept Phys, Fac Arts & Sci, TR-81620 Duzce, Turkey en_US
dc.description Ercan, ismail/0000-0001-6490-3792; Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166 en_US
dc.description.abstract The temperature (T) and illumination intensity (F) effects on the photoconductivity of as grown and heat-treated AgIn5S8 thin films has been investigated. At fixed illumination intensity, in the temperature region of 40-300K, the photocurrent (I-ph) of the films was observed to decrease with decreasing temperature. The I-ph of the as grown sample behaved abnormally in the temperature region of 170-180K. At fixed temperature and variable illumination intensity, the photocurrent of the as grown sample exhibited linear, sublinear and supralinear recombination mechanisms at 300 K and in the regions of 160-260K and 25-130 K. respectively. This behavior is attributed to the exchange of role between the linear recombination at the surface near room temperature and trapping centers in the film which become dominant as temperature decreases. Annealing the sample at 350 K for 1 h improved the characteristic curves of I-ph. The abnormality disappeared and the I-ph - T dependence is systematic. The data analysis of which revealed two recombination centers located at 66 and 16 meV. In addition, the sublinear recombination mechanism disappeared and the heat-treated films exhibited supralinear recombination in most of the studied temperature range. (C) 2010 Elsevier B.V. All rights reserved. en_US
dc.identifier.citationcount 8
dc.identifier.doi 10.1016/j.jallcom.2010.08.051
dc.identifier.endpage 383 en_US
dc.identifier.issn 0925-8388
dc.identifier.issn 1873-4669
dc.identifier.issue 2 en_US
dc.identifier.scopus 2-s2.0-77957860164
dc.identifier.startpage 380 en_US
dc.identifier.uri https://doi.org/10.1016/j.jallcom.2010.08.051
dc.identifier.uri https://hdl.handle.net/20.500.14411/1614
dc.identifier.volume 508 en_US
dc.identifier.wos WOS:000283954000034
dc.identifier.wosquality Q1
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.institutionauthor Kayed, Tarek Said
dc.language.iso en en_US
dc.publisher Elsevier Science Sa en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 7
dc.subject Thin films en_US
dc.subject Vapor deposition en_US
dc.subject Semiconductors en_US
dc.subject X-ray diffraction en_US
dc.title Photoconductivity Kinetics in Agin<sub>5</Sub>s<sub>8< Thin Films en_US
dc.type Article en_US
dc.wos.citedbyCount 7
dspace.entity.type Publication
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