Study of vibrational modes in (Ga<sub>2</sub>S<sub>3</sub>)<sub>x</sub> - (Ga<sub>2</sub>Se<sub>3</sub>)<sub>1-x</sub> mixed crystals by Raman and infrared reflection measurements

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid23766993100
dc.authorscopusid55445682700
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGuler, I.
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:40:16Z
dc.date.available2024-07-05T15:40:16Z
dc.date.issued2019
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Guler, I.] Cankaya Univ, Intercurricular Courses Dept, Phys, TR-06790 Ankara, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijanen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;en_US
dc.description.abstractRaman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.en_US
dc.identifier.citation7
dc.identifier.doi10.1016/j.optmat.2019.109228
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-85068135355
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2019.109228
dc.identifier.urihttps://hdl.handle.net/20.500.14411/3322
dc.identifier.volume95en_US
dc.identifier.wosWOS:000497246900028
dc.identifier.wosqualityQ2
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSemiconductorsen_US
dc.subjectChalcogenidesen_US
dc.subjectOptical propertiesen_US
dc.subjectInfrared reflectionen_US
dc.subjectRaman scatteringen_US
dc.titleStudy of vibrational modes in (Ga<sub>2</sub>S<sub>3</sub>)<sub>x</sub> - (Ga<sub>2</sub>Se<sub>3</sub>)<sub>1-x</sub> mixed crystals by Raman and infrared reflection measurementsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscovery0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
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