Illumination Effects on the Capacitance Spectra and Signal Quality Factor of Al/Inse Microwave Sensors

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid 6603962677
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.contributor.author Qasrawi, A. F.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:28:40Z
dc.date.available 2024-07-05T14:28:40Z
dc.date.issued 2013
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, Israel; [Qasrawi, A. F.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975 en_US
dc.description.abstract Amorphous indium selenide thin films have been used in the design of a microwave-sensitive Schottky barrier. The illumination effects on the capacitance spectra, on the signal quality factor, and on the capacitance (C)-voltage (V) characteristics of the Al/InSe/C device are investigated. Particular shifts in the amplitude and in the resonance peaks of the capacitance spectra which were studied in the frequency range of 10.0 kHz to 3.0 GHz are observed. While the photoexcitation of these devices increased the capacity level by similar to 1.6 times the original magnitude, the dark quality factor, which was 2.2 x 10(6) at 3.0 GHz, fell to 1.2 x 10(6) when subjected to luminance of 14.7 klux. Analysis of the C-V curves recorded at signal power ranging from wireless local area network (LAN) levels to the maximum output power of third generation (3G) mobiles reflected high tunability of capacitance upon increasing the voltage or power. The tunability of the biased capacitance was much more pronounced in the light than in the dark. The obtained characteristics of the Al/InSe/C sensors indicate their usability in radio and microwave technology. en_US
dc.identifier.citationcount 7
dc.identifier.doi 10.1007/s11664-013-2502-6
dc.identifier.endpage 1036 en_US
dc.identifier.issn 0361-5235
dc.identifier.issue 6 en_US
dc.identifier.scopus 2-s2.0-84877745758
dc.identifier.startpage 1033 en_US
dc.identifier.uri https://doi.org/10.1007/s11664-013-2502-6
dc.identifier.uri https://hdl.handle.net/20.500.14411/423
dc.identifier.volume 42 en_US
dc.identifier.wos WOS:000318569300014
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Springer en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 7
dc.subject Semiconductor devices en_US
dc.subject InSe en_US
dc.subject thin films en_US
dc.subject optical en_US
dc.title Illumination Effects on the Capacitance Spectra and Signal Quality Factor of Al/Inse Microwave Sensors en_US
dc.type Article en_US
dc.wos.citedbyCount 7
dspace.entity.type Publication
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