Thermoluminescence characteristics of GaSe and Ga<sub>2</sub>Se<sub>3 </sub>single crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid SARIGUL, NESLIHAN/0000-0002-5371-7924
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorscopusid 23766993100
dc.authorscopusid 56658622300
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid SARIGUL, NESLIHAN/J-1564-2013
dc.contributor.author Isik, M.
dc.contributor.author Sarigul, N.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:18:33Z
dc.date.available 2024-07-05T15:18:33Z
dc.date.issued 2022
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Sarigul, N.] Hacettepe Univ, Inst Nucl Sci, TR-06532 Ankara, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; SARIGUL, NESLIHAN/0000-0002-5371-7924; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract GaSe and Ga2Se3 are semiconducting compounds formed from same constituent elements. These compounds have been attractive due to their optoelectronic and photovoltaic applications. Defects take remarkable attention since they affect quality of semiconductor devices. In the present paper, deep defect centers in GaSe and Ga2Se3 single crystals grown by Bridgman method were reported from the analyses of thermoluminescence measurements performed in the 350-675 K range. Experimental TL curves of GaSe and Ga2Se3 single crystals presented one and two overlapped peaks, respectively. The applied curve fitting and initial rise techniques were in good agreement about trap activation energies of 0.83 eV for GaSe, 0.96 and 1.24 eV for Ga2Se3 crystals. Crystalline structural properties of the grown single crystals were also investigated by x-ray diffraction measurements. The peaks observed in XRD patterns of the GaSe and Ga2Se3 crystals were well-consistent with hexagonal and zinc blende structures, respectively. en_US
dc.identifier.citationcount 1
dc.identifier.doi 10.1016/j.jlumin.2022.118846
dc.identifier.issn 0022-2313
dc.identifier.issn 1872-7883
dc.identifier.scopus 2-s2.0-85126537583
dc.identifier.uri https://doi.org/10.1016/j.jlumin.2022.118846
dc.identifier.uri https://hdl.handle.net/20.500.14411/1854
dc.identifier.volume 246 en_US
dc.identifier.wos WOS:000830851600009
dc.identifier.wosquality Q2
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 4
dc.subject GaSe en_US
dc.subject Ga2Se3 en_US
dc.subject Thermoluminescence en_US
dc.subject Defects en_US
dc.subject Semiconductors en_US
dc.title Thermoluminescence characteristics of GaSe and Ga<sub>2</sub>Se<sub>3 </sub>single crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 4
dspace.entity.type Publication
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