Güllü, Hasan Hüseyin

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Profile URL
https://hdl.handle.net/20.500.14411/8052
Name Variants
Gullu,H.H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
Job Title
Doktor Öğretim Üyesi
Email Address
hasan.gullu@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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WoS Researcher ID

Sustainable Development Goals

2

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0

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14

LIFE BELOW WATER
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17

PARTNERSHIPS FOR THE GOALS
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5

GENDER EQUALITY
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16

PEACE, JUSTICE AND STRONG INSTITUTIONS
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8

DECENT WORK AND ECONOMIC GROWTH
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4

QUALITY EDUCATION
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6

CLEAN WATER AND SANITATION
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7

AFFORDABLE AND CLEAN ENERGY
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5

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10

REDUCED INEQUALITIES
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11

SUSTAINABLE CITIES AND COMMUNITIES
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9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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1

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3

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RESPONSIBLE CONSUMPTION AND PRODUCTION
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Scholarly Output

55

Articles

52

Views / Downloads

7/0

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

881

Scopus Citation Count

899

WoS h-index

16

Scopus h-index

16

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0

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0

WoS Citations per Publication

16.02

Scopus Citations per Publication

16.35

Open Access Source

8

Supervised Theses

1

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JournalCount
Journal of Materials Science: Materials in Electronics16
Physica B: Condensed Matter7
Bulletin of Materials Science3
Materials Science in Semiconductor Processing3
Optik3
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Subject: sputtering

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Conference Object
    Citation - WoS: 10
    Citation - Scopus: 10
    Investigation of Carrier Transport Mechanisms in the Cu-Zn Based Hetero-Structure Grown by Sputtering Technique
    (Canadian Science Publishing, 2018) Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M.
    In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm(-2)K(-2) by means of modified Richardson plot.
  • Thumbnail Image
    Article
    Citation - WoS: 6
    Citation - Scopus: 7
    Construction of Self-Assembled Vertical Nanoflakes on Cztsse Thin Films
    (Iop Publishing Ltd, 2019) Terlemezoglu, M.; Surucu, O. Bayrakli; Colakoglu, T.; Abak, M. K.; Gullu, H. H.; Ercelebi, C.; Parlak, M.
    Cu2ZnSn(S, Se)(4) (CZTSSe) is a promising alternative absorber material to achieve high power conversion efficiencies, besides its property of involving low-cost and earth-abundant elements when compared to Cu(In, Ga) Se-2 (CIGS) and cadmium telluride (CdTe), to be used in solar cell technology. In this study, a novel fabrication technique was developed by utilizing RF sputtering deposition of CZTSSe thin films having a surface decorated with self-assembled nanoflakes. The formation of nanoflakes was investigated by detailed spectroscopic method of analysis in the effect of each stacked layer deposition in an optimized sequence and the size of nanoflakes by an accurate control of sputtering process including film thickness. Moreover, the effects of substrate temperature on the formation of nanoflakes on the film surface were discussed at a fixed deposition route. One of the main advantages arising from the film surface with self-assembled nanoflakes is the efficient light trapping which decreases the surface reflectance. As a result of the detailed production and characterization studies, it was observed that there was a possibility of repeatable and controllable fabrication sequence for the preparation of CZTSSe thin films with self-textured surfaces yielding low surface reflectance.