Güllü, Hasan Hüseyin

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Profile URL
https://hdl.handle.net/20.500.14411/8052
Name Variants
Gullu,H.H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
Job Title
Doktor Öğretim Üyesi
Email Address
hasan.gullu@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

14

LIFE BELOW WATER
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0

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2

ZERO HUNGER
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11

SUSTAINABLE CITIES AND COMMUNITIES
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1

NO POVERTY
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12

RESPONSIBLE CONSUMPTION AND PRODUCTION
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7

AFFORDABLE AND CLEAN ENERGY
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5

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5

GENDER EQUALITY
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3

GOOD HEALTH AND WELL-BEING
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9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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13

CLIMATE ACTION
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6

CLEAN WATER AND SANITATION
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10

REDUCED INEQUALITIES
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4

QUALITY EDUCATION
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15

LIFE ON LAND
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16

PEACE, JUSTICE AND STRONG INSTITUTIONS
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17

PARTNERSHIPS FOR THE GOALS
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8

DECENT WORK AND ECONOMIC GROWTH
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Scholarly Output

55

Articles

52

Views / Downloads

7/0

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

873

Scopus Citation Count

899

WoS h-index

16

Scopus h-index

16

Patents

0

Projects

0

WoS Citations per Publication

15.87

Scopus Citations per Publication

16.35

Open Access Source

8

Supervised Theses

1

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JournalCount
Journal of Materials Science: Materials in Electronics16
Physica B: Condensed Matter7
Bulletin of Materials Science3
Materials Science in Semiconductor Processing3
Optik3
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Type: Conference Object

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Conference Object
    Citation - WoS: 10
    Citation - Scopus: 10
    Investigation of Carrier Transport Mechanisms in the Cu-Zn Based Hetero-Structure Grown by Sputtering Technique
    (Canadian Science Publishing, 2018) Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M.
    In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm(-2)K(-2) by means of modified Richardson plot.
  • Thumbnail Image
    Conference Object
    Citation - WoS: 4
    Citation - Scopus: 3
    Temperature-dependent material characterization of CuZnSe2 thin films
    (Elsevier Science Sa, 2020) Gullu, H. H.; Surucu, O.; Terlemezoglu, M.; Isik, M.; Ercelebi, C.; Gasanly, N. M.; Parlak, M.
    In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without secondary phase contribution in the film structure. Optical and electrical properties of CZSe thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The band gap energy values were obtained using transmittance spectra under the light of expression relating absorption coefficient to incident photon energy. Band gap energy values were found in decreasing behavior from 2.31 to 2.27 eV with increase in temperature from 10 to 300 K. Temperature-band gap dependency was evaluated by Varshni and O'Donnell models to detail the optical parameters of the thin films. The experimental dark and photoconductivity values were investigated by thermionic emission model over the grain boundary potential. Room temperature conductivity values were obtained in between 0.91 and 4.65 ( x 10(-4) Omega(-1)cm(-1)) under various illumination intensities. Three different linear conductivity regions were observed in the temperature dependent profile. These linear regions were analyzed to extract the activation energy values.