Güllü, Hasan Hüseyin

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Profile URL
https://hdl.handle.net/20.500.14411/8052
Name Variants
Gullu,H.H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
Job Title
Doktor Öğretim Üyesi
Email Address
hasan.gullu@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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WoS Researcher ID

Sustainable Development Goals

2

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0

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14

LIFE BELOW WATER
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17

PARTNERSHIPS FOR THE GOALS
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5

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16

PEACE, JUSTICE AND STRONG INSTITUTIONS
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8

DECENT WORK AND ECONOMIC GROWTH
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4

QUALITY EDUCATION
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6

CLEAN WATER AND SANITATION
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7

AFFORDABLE AND CLEAN ENERGY
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5

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10

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11

SUSTAINABLE CITIES AND COMMUNITIES
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9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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1

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3

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12

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13

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15

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Scholarly Output

55

Articles

52

Views / Downloads

7/0

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

877

Scopus Citation Count

899

WoS h-index

16

Scopus h-index

16

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0

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0

WoS Citations per Publication

15.95

Scopus Citations per Publication

16.35

Open Access Source

8

Supervised Theses

1

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JournalCount
Journal of Materials Science: Materials in Electronics16
Physica B: Condensed Matter7
Bulletin of Materials Science3
Materials Science in Semiconductor Processing3
Optik3
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Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Article
    Citation - WoS: 2
    Citation - Scopus: 3
    Electrical Characterization of Zninse2 Thin-Film Heterojunction
    (Springer, 2019) Gullu, H. H.; Parlak, M.
    ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high forward-bias region, the series and shunt resistances were calculated with the help of parasitic resistance relations, yielding room-temperature values of 9.54 x 10(2) Omega cm(2) and 1.23 x 10(3) Omega cm(2), respectively. According to the analysis of the current flow in the forward-bias region, abnormal thermionic emission due to the variation of the ideality factor with temperature and space-charge-limited current processes were determined to be the dominant conduction mechanisms in this heterostructure. In the reverse-bias region, the tunneling mechanism was found to be effective in the leakage current flow with trap density of 10(6) cm(-3). Spectral photocurrent measurements were carried out to investigate the spectral working range of the device structure. The main photocurrent peaks observed in the spectrum corresponded to the band-edge values of the active thin-film layers.
  • Thumbnail Image
    Article
    Citation - WoS: 11
    Citation - Scopus: 8
    Fabrication and Characterization of Tio2 Thin Film for Device Applications
    (World Scientific Publ Co Pte Ltd, 2019) Hosseini, A.; Gullu, H. H.; Coskun, E.; Parlak, M.; Ercelebi, C.
    Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO(2 )film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV-visual (UV-Vis) spectral and dark current-voltage (I-V) measurement analyses. The deposited film layer was found to be homogeneous structure with crack-free surface. The bandgap value of TiO2 film was determined as 3.6 eV and transmission was around 65-85% in the spectral range of 320-1100 nm. The conductivity type of the deposited film was determined as n-type by hot probe method. These values make TiO2 film a suitable candidate as the n-type window layer in possible diode applications. TiO2 film was also deposited on p-Si (111) wafer to obtain Al/n-TiO2/p-Si/Al heterojunction device structure. The dark I-V characteristic was studied to determine the possible conduction mechanisms and diode parameters.