Güllü, Hasan Hüseyin

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Profile URL
https://hdl.handle.net/20.500.14411/8052
Name Variants
Gullu,H.H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
Job Title
Doktor Öğretim Üyesi
Email Address
hasan.gullu@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Scholarly Output

55

Articles

52

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1

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877

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899

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15.95

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16.35

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Journal of Materials Science: Materials in Electronics16
Physica B: Condensed Matter7
Bulletin of Materials Science3
Materials Science in Semiconductor Processing3
Optik3
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Author: Yildiz, D. E.Subject: Thin film

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Article
    Citation - WoS: 25
    Citation - Scopus: 26
    Determination of Current Transport Characteristics in Au-cu/Cuo Schottky Diodes
    (Elsevier, 2019) Surucu, O. Bayrakli; Gullu, H. H.; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M.
    In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm(-2)K(-2) with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results.
  • Thumbnail Image
    Article
    Citation - WoS: 10
    Citation - Scopus: 10
    Electrical Characterization of Cdznte/Si Diode Structure
    (Springer Heidelberg, 2020) Balbasi, C. Dogru; Terlemezoglu, M.; Gullu, H. H.; Yildiz, D. E.; Parlak, M.
    Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. Obtained profiles enable us to understand the different characteristics of the diode structure such as the carrier conduction mechanism and the nature of the interfacial layer. Over the temperature range between 220 and 340 K, taking consideration of the disparity in the forward-biased current, the diode parameters such as saturation current (I-0), zero-bias barrier height (Phi(B0)) and ideality factor (n) have been obtained. The barrier height increased (0.53 to 0.80 eV) while the ideality factor decreased (4.63 to 2.79) with increasing temperature from 220 to 340 K, indicating an improvement in the junction characteristics at high temperatures. Due to the inhomogeneity in barrier height, the conduction mechanism was investigated by Gaussian distribution analysis. Hence, the mean zero-bias barrier height ((Phi) over bar (B0)) and zero-bias standard deviation (sigma(0)) were calculated as 1.31 eV and 0.18, respectively. Moreover, for holes in p-type Si, Richardson constant was found to be 32.09 A cm(-2) K-2 via modified Richardson plot. Using the capacitance-voltage (C - V) and conductance-voltage (G - V) characteristics, series resistance (R-s) and density of interfacial traps (D-it) have been also investigated in detail. A decreasing trend for R-s and D-it profiles with increasing frequency was observed due to the impurities at the CdZnTe/Si interface and interfacial layer between the front metal contact and CdZnTe film.